BC817DPN,115 [NXP]
BC817DPN - NPN/PNP general purpose transistor TSOP 6-Pin;
| 型号： | BC817DPN,115 |
| 厂家： | 
NXP |
| 描述： | BC817DPN - NPN/PNP general purpose transistor TSOP 6-Pin 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC817DPN
NPN/PNP general purpose
transistor
Product data sheet
2002 Nov 22
Supersedes data of 2002 Aug 09
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
FEATURES
QUICK REFERENCE DATA
• High current (500 mA)
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
• 600 mW total power dissipation
collector-emitter voltage
collector current (DC)
peak collector current
45
500
1
V
• Replaces two SOT23 packaged transistors on same
PCB area.
mA
A
ICM
APPLICATIONS
PINNING
• General purpose switching and amplification
• Complementary driver
PIN
1, 4
2, 5
6, 3
DESCRIPTION
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
• Half and full bridge driver.
collector
DESCRIPTION
NPN/PNP transistor pair in a SOT457 (SC-74) plastic
package.
6
5
6
5
4
4
handbook, halfpage
MARKING
TR2
TR1
1
TYPE NUMBER
BC817DPN
MARKING CODE
N4
1
2
3
2
3
Top view
MAM445
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Per transistor; for the PNP transistor with negative polarity
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
50
V
−
45
V
open collector
−
5
V
−
500
1
mA
A
ICM
−
IBM
−
200
370
+150
150
+150
mA
mW
°C
°C
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−
−65
−
Tamb
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
600
mW
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Nov 22
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
208
UNIT
Rth j-a
thermal resistance from junction to note 1
ambient
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 20 V; IE = 0
−
−
−
−
−
−
−
−
100
5
nA
μA
nA
VCB = 20 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
100
400
−
VCE = 1 V; IC = 100 mA; note 1
VCE = 1 V; IC = 500 mA; note 1
160
40
−
VCEsat
VBE
collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
700
1.2
mV
V
base-emitter voltage
VCE = 1 V; IC = 500 mA;
notes 1 and 2
−
NPN transistor
Cc
fT
collector capacitance
transition frequency
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
5
−
−
pF
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
−
MHz
PNP transistor
Cc
fT
collector capacitance
transition frequency
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
9
−
−
pF
VCE = −5 V; IC = −10 mA;
80
−
MHz
f = 100 MHz
Notes
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2. VBE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MBL748
MBL747
1000
500
handbook, halfpage
handbook, halfpage
(1) (2) (3) (4) (5)
I
C
h
FE
(mA)
(1)
800
400
(6)
(7)
(8)
(9)
600
400
300
(2)
200
(10)
(3)
200
100
0
0
0
−1
2
3
10
1
10
10
10
2
4
6
8
10
(V)
I
(mA)
V
C
CE
TR1 (NPN)
TR1 (NPN) VCE = 1 V.
(1) IB = 15 mA.
(5)
IB = 9 mA.
(9)
IB = 3 mA.
(2) IB = 13.5 mA.
(6) IB = 7.5 mA.
(7) B = 6 mA.
(8) IB = 4.5 mA.
(10) IB = 1.5 mA.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3)
IB = 12 mA.
I
(4) IB = 10.5 mA.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2002 Nov 22
4
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MBL749
MBL750
3
10
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
1000
V
CEsat
(mV)
(1)
(2)
800
600
2
10
(1)
(3)
400
200
(2)
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN) IC/IB = 10.
TR1 (NPN) VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
5
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MHC324
MHC325
600
−1000
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
I
h
C
FE
(mA)
(1)
500
−800
(4)
(5)
(6)
400
−600
−400
(7)
(8)
300
200
100
0
(2)
(3)
(9)
(10)
−200
0
0
−1
2
3
−10
−1
−10
−10
−10
(mA)
−2
−4
−6
−8
V
−10
(V)
I
C
CE
TR2 (PNP)
TR2 (PNP) VCE = −1 V.
(1) IB = −7 mA.
(5)
IB = −4.2 mA.
(9)
IB = −1.4 mA.
(2) IB = −6.3 mA.
(3) B = −5.6 mA.
(4) IB = −4.9 mA.
(6) IB = −3.5 mA.
(7) B = −2.8 mA.
(8) IB = −2.1 mA.
(10) IB = −0.7 mA.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
I
I
Fig.6 DC current gain as a function of collector
current; typical values.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
2002 Nov 22
6
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
MHC326
MHC327
3
−10
−1200
handbook, halfpage
handbook, halfpage
V
BE
V
(mV)
CEsat
(mV)
−1000
2
−10
(1)
(2)
−800
−600
(1)
(2)
(3)
−10
−400
−200
(3)
−1
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
TR2 (PNP) IC/IB = 10.
TR2 (PNP) VCE = −1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
7
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2002 Nov 22
8
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistor
BC817DPN
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
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Export control ⎯ This document as well as the item(s)
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
2002 Nov 22
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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Printed in The Netherlands
613514/02/pp10
Date of release: 2002 Nov 22
Document order number: 9397 750 10583
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