BC846F [NXP]
NPN general purpose transistors; NPN通用晶体管
| 型号： | BC846F |
| 厂家： | 
NXP |
| 描述： | NPN general purpose transistors |
| 文件： | 总8页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC846F; BC847F; BC848F series
NPN general purpose transistors
1999 May 18
Preliminary specification
Supersedes data of 1998 Nov 10
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
FEATURES
PINNING
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
PIN
DESCRIPTION
1
2
3
base
• Low voltage (max. 65 V).
emitter
collector
APPLICATIONS
• General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
3
handbook, halfpage
3
NPN transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
1
PNP complements: BC856F, BC857F and BC858F series.
2
1
2
Top view
MAM410
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC846AF
BC846BF
BC847AF
BC847BF
1A
1B
1E
1F
BC847CF
BC848AF
BC848BF
BC848CF
1G
1J
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
1K
1L
1999 May 18
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BC846AF; BC846BF
BC847AF; BC847BF; BC847CF
BC848AF; BC848BF; BC848CF
collector-emitter voltage
BC846AF; BC846BF
−
−
−
80
V
V
V
50
30
VCEO
open base
−
−
−
−
−
−
−
−
65
V
V
V
V
BC847AF; BC847BF; BC847CF
BC848AF; BC848BF; BC848CF
emitter-base voltage
45
30
VEBO
IC
open collector
5
collector current (DC)
100
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
peak collector current
peak base current
total power dissipation
Tamb ≤ 25 °C; note 1
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN.
MAX.
15
UNIT
collector cut-off current
−
−
−
nA
µA
nA
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
5
IEBO
hFE
emitter cut-off current
100
DC current gain
IC = 2 mA; VCE = 5 V
BC846AF; BC847AF; BC848AF
BC846BF; BC847BF; BC848BF
BC847CF; BC848CF
110
200
420
−
220
450
800
200
400
700
770
1.5
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
mV
mV
mV
mV
pF
−
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
−
IC = 10 mA; VCE = 5 V
Cc
fT
collector capacitance
transition frequency
noise figure
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
MHz
dB
F
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 18
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
1999 May 18
5
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 18
6
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
NOTES
1999 May 18
7
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 18
Document order number: 9397 750 05847
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