BC847BT,115 [NXP]
BC847 series - 45 V, 100 mA NPN general-purpose transistors SC-75 3-Pin;型号: | BC847BT,115 |
厂家: | NXP |
描述: | BC847 series - 45 V, 100 mA NPN general-purpose transistors SC-75 3-Pin 开关 光电二极管 晶体管 |
文件: | 总18页 (文件大小:343K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 9 — 23 September 2014
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number[1]
Package
NXP
PNP complement
JEITA
JEDEC
BC847
SOT23
-
TO-236AB
BC857
BC847A
BC857A
BC847B
BC857B
BC847C
BC857C
BC847W
BC847AW
BC847BW
BC847CW
BC847T
SOT323
SOT416
SOT883
SC-70
SC-75
SC-101
-
-
-
BC857W
BC857AW
BC857BW
BC857CW
BC857T
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC857AT
BC857BT
BC857CT
BC857AM
BC857BM
BC857CM
[1] Valid for all available selection groups.
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min
-
Typ
-
Max
45
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
100
800
220
450
800
mA
[1]
hFE
DC current gain
hFE group A
hFE group B
hFE group C
VCE = 5 V; IC = 2 mA
110
110
200
420
-
180
290
520
[1] Tamb = 25 °C unless otherwise specified
2. Pinning information
Table 3.
Pin
SOT23, SOT323, SOT416
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
base
3
3
emitter
collector
1
2
1
2
sym021
006aaa144
SOT883
1
2
3
base
3
1
2
emitter
collector
3
1
Transparent
top view
2
sym021
BC847_SER
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Product data sheet
Rev. 9 — 23 September 2014
2 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
3. Ordering information
Table 4.
Ordering information
Type number[1] Package
Name
Description
Version
BC847
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT23
BC847A
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
BC847T
SC-70
SC-75
SC-101
SOT323
SOT416
SOT883
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm
[1] Valid for all available selection groups.
4. Marking
Table 5.
Marking codes
Type number
BC847
Marking code[1]
Type number
BC847T
Marking code[1]
1H*
1E*
1F*
1G*
1H*
1E*
1F*
1G*
1N
1E
1F
1G
D4
D5
D6
BC847A
BC847AT
BC847BT
BC847CT
BC847AM
BC847BM
BC847CM
BC847B
BC847C
BC847W
BC847AW
BC847BW
BC847CW
[1] * = placeholder for manufacturing site code
BC847_SER
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 9 — 23 September 2014
3 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
45
V
open collector
6
V
100
200
mA
mA
ICM
peak collector current
single pulse;
tp 1 ms
IBM
Ptot
peak base current
single pulse;
tp 1 ms
-
100
mA
[1]
[2]
total power dissipation
SOT23
Tamb 25 C
-
250
200
150
250
mW
mW
mW
mW
C
SOT323
-
SOT416
-
SOT883
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
Tamb
Tstg
65
65
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT23
-
-
-
-
-
-
-
-
500
625
833
500
K/W
K/W
K/W
K/W
SOT323
SOT416
SOT883
[2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
BC847_SER
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Product data sheet
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4 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
15
5
Unit
nA
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
-
-
-
-
current
VCB = 30 V; IE = 0 A;
A
Tj = 150 C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
DC current gain
hFE group A
hFE group B
hFE group C
DC current gain
hFE group A
hFE group B
hFE group C
VCE = 5 V; IC = 10 A
-
170
280
420
-
-
-
-
-
-
VCE = 5 V; IC = 2 mA
110
110
200
420
-
800
220
450
800
200
400
-
180
290
520
90
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
mV
mV
mV
mV
mV
mV
MHz
[1]
[2]
[2]
[2]
-
200
700
900
660
-
base-emitter
saturation voltage
-
-
-
base-emitter voltage
580
-
700
770
-
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
-
Cc
Ce
NF
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
-
-
-
1.5
-
pF
pF
dB
emitter capacitance
VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
11
2
noise figure
IC = 200 A; VCE = 5 V;
RS = 2 k; f = 1 kHz;
B = 200 Hz
10
[1] Pulse test: tp 300 s; = 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC847_SER
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Product data sheet
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5 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt723
mgt724
400
1200
V
BE
(mV)
1000
h
FE
(1)
300
(1)
(2)
800
600
400
200
0
(2)
(3)
200
100
0
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 C
(2) Tamb = 25 C
(1) Tamb = 55 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
(3) Tamb = 150 C
Fig 1. Group A: DC current gain as a function of
collector current; typical values
Fig 2. Group A: Base-emitter voltage as a function of
collector current; typical values
mgt725
mgt726
3
10
1200
V
BEsat
(mV)
1000
V
(mV)
CEsat
(1)
(2)
800
600
400
200
0
2
10
(1)
(2)
(3)
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
(1) Tamb = 150 C
(2) amb = 25 C
(3) Tamb = 55 C
IC/IB = 10
(1) Tamb = 55 C
(2) amb = 25 C
(3) Tamb = 150 C
T
T
Fig 3. Group A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. Group A: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
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Product data sheet
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6 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt728
mgt727
600
1200
V
BE
h
FE
(mV)
1000
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(1)
(2)
(3)
(3)
−2
−1
2
3
-1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
amb = 150 C
VCE = 5 V
(1) Tamb = 55 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 5. Group B: DC current gain as a function of
collector current; typical values
Fig 6. Group B: Base-emitter voltage as a function of
collector current; typical values
mgt729
mgt730
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 C
(2) Tamb = 25 C
(1) Tamb = 55 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
(3) Tamb = 150 C
Fig 7. Group B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. Group B: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt732
mgt731
1200
1200
V
BE
h
FE
(mV)
1000
1000
800
600
400
200
0
(1)
(1)
(2)
800
600
400
200
0
(2)
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
amb = 150 C
VCE = 5 V
(1) Tamb = 55 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 9. Group C: DC current gain as a function of
collector current; typical values
Fig 10. Group C: Base-emitter voltage as a function of
collector current; typical values
mgt733
mgt734
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 C
(2) Tamb = 25 C
(1) Tamb = 55 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
(3) Tamb = 150 C
Fig 11. Group C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 12. Group C: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 13. Package outline SOT23 (TO-236AB)
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig 14. Package outline SOT323 (SC-70)
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
1.8
1.4
0.95
0.60
3
0.45
0.15
1.75 0.9
1.45 0.7
1
2
0.30
0.15
0.25
0.10
1
Dimensions in mm
04-11-04
Fig 15. Package outline SOT416 (SC-75)
0.62
0.55
0.50
0.46
0.55
0.47
3
0.30
0.22
1.02
0.95
0.65
0.30
0.22
2
1
0.20
0.12
0.35
Dimensions in mm
03-04-03
Fig 16. Package outline SOT883 (SC-101)
BC847_SER
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 17. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 18. Wave soldering footprint SOT23 (TO-236AB)
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
1.3
2.35
occupied area
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 19. Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 20. Wave soldering footprint SOT323 (SC-70)
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
0.5
(3×)
occupied area
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Fig 21. Reflow soldering footprint SOT416 (SC-75)
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6 0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.4
(2×)
0.3
0.4
Dimensions in mm
sot883_fr
Fig 22. Reflow soldering footprint SOT883 (SC-101)
BC847_SER
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Product data sheet
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
11. Revision history
Table 9.
Revision history
Document ID
BC847_SER v.9
Modifications:
Release date
Data sheet status
Change notice Supersedes
20140923
Product data sheet
-
BC847_SER v.8
• Section 1.2 “Features and benefits”: updated
• Section 5 “Limiting values”: updated
• Figure 5: corrected
• Section 8 “Test information”: added
• Section 12 “Legal information”: updated
BC847_SER v.8
20120820
20081210
20050519
Product data sheet
Product data sheet
Product data sheet
-
-
-
BC847_BC547_SER v.7
BC847_BC547_SER v.7
BC847_BC547_SER v.6
BC847_BC547_SER v.6
-
BC847_SER
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BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
12.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 9 — 23 September 2014
15 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 9 — 23 September 2014
16 of 17
BC847 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 September 2014
Document identifier: BC847_SER
相关型号:
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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