BC847DS [NXP]
45 V, 100 mA NPN/NPN general-purpose transistor; 45 V ， 100毫安NPN / NPN通用晶体管
| 型号： | BC847DS |
| 厂家： | 
NXP |
| 描述： | 45 V, 100 mA NPN/NPN general-purpose transistor |
| 文件： | 总12页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847DS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 01 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a small SOT457 (SC-74) Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
VCEO
IC
collector-emitter voltage open base
collector current
-
-
45
V
-
-
100
450
mA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
200
300
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
4
1
2
3
5
1
2
3
6
collector TR1
sym020
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BC847DS
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
BC847DS
ZL
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
50
45
V
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
6
V
100
200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
-
200
250
mA
[1]
[1]
Ptot
total power dissipation
T
amb ≤ 25 °C
amb ≤ 25 °C
mW
Per device
Ptot
total power dissipation
T
-
380
mW
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
2 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab621
500
P
tot
(mW)
400
300
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT457 (SC-74)
6. Thermal characteristics
Table 6.
Symbol
Per transistor
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
[1]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
-
-
500
250
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
328
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
3 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
006aab622
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
ICBO
collector-basecut-off VCB = 30 V; IE = 0 A
-
-
-
-
15
5
nA
current
VCB = 30 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off VEB = 6 V; IC = 0 A
current
-
-
100
nA
DC current gain
VCE = 5 V
IC = 10 µA
-
280
300
55
-
IC = 2 mA
200
450
100
300
850
-
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
-
-
-
-
mV
mV
mV
mV
200
755
1000
base-emitter
saturation voltage
base-emitter voltage VCE = 5 V
IC = 2 mA
580
-
650
-
700
770
mV
mV
IC = 10 mA
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
4 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector capacitance VCB = 10 V; IE = ie = 0 A;
Min
Typ
Max
Unit
Cc
Ce
fT
-
1.9
-
pF
f = 1 MHz
emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
-
11
-
-
-
-
pF
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
-
MHz
dB
NF
noise figure
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ;
1.9
f = 10 Hz to 15.7 kHz
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
-
3.1
-
dB
006aaa533
006aaa532
600
0.20
I
(mA) = 4.50
4.05
B
I
C
3.60
(A)
0.16
h
FE
3.15
2.70
2.25
1.80
1.35
400
200
0
(1)
(2)
(3)
0.12
0.08
0.04
0
0.90
0.45
−2
−1
2
3
10
10
1
10
10
10
(mA)
0
2
4
6
8
10
(V)
I
V
CE
C
VCE = 5 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
5 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
006aaa536
006aaa534
1
1.3
V
BEsat
(V)
V
BE
1.1
(V)
0.8
0.9
0.7
0.5
0.3
0.1
(1)
(2)
(3)
0.6
0.4
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V; Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6. Per transistor: Base-emitter saturation voltage
as a function of collector current;
typical values
006aaa535
006aaa537
3
10
10
V
CEsat
(V)
f
T
(MHz)
1
2
10
−1
10
10
(1)
(2)
(3)
−2
10
−1
2
3
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
VCE = 5 V; Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
6 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
006aab620
006aaa539
6
15
C
e
C
c
(pF)
(pF)
13
4
11
9
2
0
7
5
0
2
4
6
8
10
(V)
0
2
4
6
V
V
(V)
CB
EB
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig 9. Per transistor: Collector capacitance as a
function of collector-base voltage;
typical values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
7 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 11. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
10000
-135
[2]
[3]
BC847DS
SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115
-125
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
8 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
11. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig 12. Reflow soldering footprint SOT457 (SC-74)
5.3
1.5
(4×)
solder lands
solder resist
occupied area
1.475
1.475
0.45
(2×)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 13. Wave soldering footprint SOT457 (SC-74)
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
9 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC847DS_1
20090825
Product data sheet
-
-
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
10 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BC847DS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 25 August 2009
11 of 12
BC847DS
NXP Semiconductors
45 V, 100 mA NPN/NPN general-purpose transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2009
Document identifier: BC847DS_1
相关型号：
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