BC847QAPNZ [NXP]
BC847QAPN - 45 V, 100 mA NPN/PNP general-purpose transistor DFN 6-Pin;
| 型号： | BC847QAPNZ |
| 厂家： | 
NXP |
| 描述： | BC847QAPN - 45 V, 100 mA NPN/PNP general-purpose transistor DFN 6-Pin 开关 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
-
B
0
1
0
1
N
F
D
19 July 2013
Product data sheet
1. General description
NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
•
•
•
•
Low package height of 0.37 mm
3. Applications
General-purpose switching and amplification
Mobile applications
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
-
-
-
-
45
V
IC
collector current
100
mA
Per transistor; for the PNP transistor with negative polarity
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C
200
-
450
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
C1 B2
1
2
3
4
5
6
7
8
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
E2
1
2
6
5
4
7
8
TR2
collector TR2
emitter TR2
base TR2
TR1
3
E1
B1 C2
sym139
collector TR1
collector TR1
collector TR2
Transparent top view
DFN1010B-6 (SOT1216)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BC847QAPN
DFN1010B-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1216
7. Marking
Table 4.
Marking codes
Type number
Marking code
BC847QAPN
01 00 00
READING
DIRECTION
MARKING CODE
MARK-FREE AREA
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
READING EXAMPLE:
11
01
10
YEAR DATE
CODE
aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
BC847QAPN
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Product data sheet
19 July 2013
2 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Limiting values
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
open emitter
open base
-
-
-
-
-
-
-
50
V
45
V
open collector
6
V
100
200
100
230
mA
mA
mA
mW
ICM
peak collector current
peak base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
IBM
Ptot
total power dissipation
[1]
[1]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
350
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
aaa-007377
400
P
tot
(mW)
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig. 2. Per device: Power derating curve
BC847QAPN
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Product data sheet
19 July 2013
3 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[1]
-
-
543
K/W
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
357
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-007378
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.33
0.5
2
0.2
10
0.1
0.05
0.01
0.02
0
10
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current
VCB = 30 V; IE = 0 A; Tamb = 25 °C
VCB = 30 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
15
5
nA
µA
nA
IEBO
emitter-base cut-off
current
100
hFE
DC current gain
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
200
-
-
-
450
100
300
VCEsat
collector-emitter
-
-
mV
mV
saturation voltage
IC = 100 mA; IB = 5 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
-
-
760
900
-
-
mV
mV
voltage
IC = 100 mA; IB = 5 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBE
base-emitter voltage
VCE = 5 V; IC = 2 mA; Tamb = 25 °C
VCE = 5 V; IC = 10 mA; Tamb = 25 °C
600
660
710
-
725
820
4
mV
mV
pF
-
-
Cc
fT
collector capacitance
transition frequency
noise figure
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
VCE = 5 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
-
-
MHz
dB
NF
VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;
f = 1 MHz; B = 200 Hz; Tamb = 25 °C
10
TR1 (NPN)
Ce
emitter capacitance
emitter capacitance
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
11
10
-
-
pF
pF
TR2 (PNP)
Ce
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
mgt727
006aab422
0.20
600
I
(mA) = 4.0
B
3.6
2.8
h
FE
I
C
3.2
2.4
(A)
(1)
(2)
500
2.0
0.15
1.6
400
300
200
100
0
1.2
0.8
0.10
0.05
0
0.4
(3)
- 1
2
3
0
1
2
3
4
5
10
1
10
10
10
V (V)
CE
I
(mA)
C
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. NPN transistor: Collector current as a function
of collector-emitter voltage; typical values
Fig. 4. NPN transistor: DC current gain as a function of
collector current; typical values
mgt728
006aab423
1.2
1200
V
BE
(mV)
1000
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
(1)
(2)
(1)
(2)
800
600
400
200
0
(3)
(3)
- 2
- 1
2
3
- 1
2
3
10
10
1
10
10
10
10
1
10
10
10
I (mA)
C
I
(mA)
C
IC/IB = 20
VCE = 5 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 7. NPN transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 6. NPN transistor: Base-emitter voltage as a
function of collector current; typical values
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
mgt729
006aab424
9
4
10
10
V
CEsat
(mV)
f
T
(Hz)
3
2
10
8
10
10
(1)
(3) (2)
7
10
10
10
- 1
2
- 1
2
3
10
1
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
Tamb = 25 °C;
VCE = 5 V;
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
f = 100 MHz
Fig. 9. Transition frequency as a function of collector
current; typical values
Fig. 8. NPN transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aab425
006aab426
600
- 0.20
I
(mA) = - 3.5
B
- 3.15
- 2.45
- 1.75
I
C
- 2.8
(1)
h
FE
(A)
- 2.1
- 1.4
- 0.15
400
- 1.05
(2)
(3)
- 0.7
- 0.10
- 0.05
0
- 0.35
200
0
- 1
- 10
2
3
- 1
- 10
- 10
- 10
0
- 1
- 2
- 3
- 4
- 5
I
(mA)
V
(V)
CE
C
VCE = -5 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
Fig. 10. PNP transistor: DC current gain as a function of
collector current; typical values
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
mle193
mle195
- 1200
- 1200
V
V
BEsat
BE
(mV)
(mV)
- 1000
- 1000
(1)
(2)
(1)
(2)
- 800
- 600
- 400
- 200
- 800
- 600
- 400
- 200
(3)
(3)
- 1
- 10
2
3
- 2
- 10
- 1
- 10
2
3
- 1
- 10
- 10
- 10
- 1
- 10
- 10
- 10
(mA)
I
(mA)
C
I
C
VCE = -5 V
IC/IB = 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 12. PNP transistor: Base-emitter voltage as a
function of collector current; typical values
Fig. 13. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
mle194
006aab427
4
9
- 10
10
V
CEsat
(mV)
f
T
(Hz)
3
2
- 10
8
10
(1)
(3)
- 10
(2)
7
- 10
- 10
10
- 10
- 1
2
3
- 1
2
- 1
- 10
- 10
- 10
- 1
- 10
- 10
I
(mA)
C
I (mA)
C
IC/IB = 20
Tamb = 25 °C;
VCE = -5 V;
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
f = 100 MHz
Fig. 15. PNP transistor: Transition frequency as a
function of collector current; typical values
Fig. 14. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
0.35
0.35
0.15
0.23
1
6
2
5
3
4
0.125
0.205
0.22
0.30
0.95
1.05
0.32
0.40
0.04
max
0.34
0.40
0.275 0.275
1.05
1.15
Dimensions in mm
13-03-05
Fig. 16. Package outline DFN1010B-6 (SOT1216)
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
SOT1216
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.25
0.35
1.3 1.2 0.5
0.35
0.6 1.1
0.25
0.3 (6x)
1
1.35
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
12-11-23
Issue date
sot1216_fr
13-03-06
Fig. 17. Reflow soldering footprint for DFN1010B-6 (SOT1216)
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BC847QAPN v.1
20130718
Product data sheet
-
-
BC847QAPN
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© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
11 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
BC847QAPN
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Product data sheet
19 July 2013
12 / 14
NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BC847QAPN
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Product data sheet
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NXP Semiconductors
BC847QAPN
45 V, 100 mA NPN/PNP general-purpose transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
11
Test information .....................................................9
11.1
Quality information ............................................... 9
12
13
14
Package outline ..................................................... 9
Soldering .............................................................. 10
Revision history ...................................................11
15
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
15.1
15.2
15.3
15.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 July 2013
BC847QAPN
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
19 July 2013
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