BC849CW,115
更新时间:2024-09-18 18:08:44
品牌:NXP
描述:BC849W; BC850W - NPN general purpose transistors SC-70 3-Pin
BC849CW,115 概述
BC849W; BC850W - NPN general purpose transistors SC-70 3-Pin 双极性晶体管 小信号双极晶体管
BC849CW,115 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 3.05 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 3 pF | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.6 V | Base Number Matches: | 1 |
BC849CW,115 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC849W; BC850W
NPN general purpose transistors
Product data sheet
1999 Apr 12
Supersedes data of 1997 Jun 20
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
PIN
1
DESCRIPTION
base
2
emitter
collector
APPLICATIONS
3
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
3
handbook, halfpage
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
3
MARKING
1
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
2
1
2
BC849BW
BC849CW
2B∗
2C∗
BC850BW
BC850CW
2F∗
Top view
MAM062
2G∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BC849W
−
−
30
V
V
BC850W
50
VCEO
collector-emitter voltage
BC849W
open base
−
−
−
−
−
−
−
30
V
V
V
BC850W
45
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
5
100
200
200
200
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN.
TYP. MAX. UNIT
collector cut-off current
−
−
−
−
15
5
nA
μA
nA
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
−
IEBO
hFE
emitter cut-off current
DC current gain
100
IC = 2 mA; VCE = 5 V; see Figs 2 and 3
BC849BW; BC850BW
BC849CW; BC850CW
200
420
−
−
−
−
−
−
−
−
11
−
−
450
800
250
600
700
770
3
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
mV
mV
mV
mV
pF
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V
−
VBE
base-emitter voltage
580
−
IC = 10 mA; VCE = 5 V
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
−
−
−
pF
100
−
−
MHz
dB
F
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
4
f = 10 Hz to 15.7 kHz
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
−
−
4
dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
MBH724
300
V
= 5 V
h
CE
FE
200
100
0
10
−2
−1
2
3
10
1
10
10
10
I
(mA)
C
BC849BW; BC850BW.
Fig.2 DC current gain; typical values.
MBH725
600
V
= 5 V
CE
h
FE
400
200
0
10
−2
−1
2
3
10
1
10
10
10
I
(mA)
C
BC849CW; BC850CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 12
5
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC849W; BC850W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 12
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp7
Date of release: 1999 Apr 12
Document order number: 9397 750 05587
BC849CW,115 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
BAS70-04W | NXP | Schottky barrier double diodes | 完全替代 | |
BC849CW,135 | NXP | BC849W; BC850W - NPN general purpose transistors SC-70 3-Pin | 完全替代 | |
BC848CW-7-F | DIODES | NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR | 类似代替 |
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