BC850BWT/R [NXP]

TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal;
BC850BWT/R
型号: BC850BWT/R
厂家: NXP    NXP
描述:

TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

放大器 光电二极管 晶体管
文件: 总7页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BC849W; BC850W  
NPN general purpose transistors  
Product data sheet  
1999 Apr 12  
Supersedes data of 1997 Jun 20  
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC849W; BC850W  
FEATURES  
PINNING  
Low current (max. 100 mA)  
Low voltage (max. 45 V).  
PIN  
1
DESCRIPTION  
base  
2
emitter  
collector  
APPLICATIONS  
3
Low noise stages in tape recorders, hi-fi amplifiers and  
other audio-frequency equipment.  
DESCRIPTION  
3
handbook, halfpage  
NPN transistor in a SOT323 plastic package.  
PNP complements: BC859W and BC860W.  
3
MARKING  
1
TYPE  
NUMBER  
MARKING  
CODE(1)  
TYPE  
NUMBER  
MARKING  
CODE(1)  
2
1
2
BC849BW  
BC849CW  
2B∗  
2C∗  
BC850BW  
BC850CW  
2F∗  
Top view  
MAM062  
2G∗  
Note  
1. = - : Made in Hong Kong.  
= t : Made in Malaysia.  
Fig.1 Simplified outline (SOT323) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BC849W  
30  
V
V
BC850W  
50  
VCEO  
collector-emitter voltage  
BC849W  
open base  
30  
V
V
V
BC850W  
45  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
5
100  
200  
200  
200  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
°C  
Tamb  
65  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
1999 Apr 12  
2
 
 
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC849W; BC850W  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient  
625  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN.  
TYP. MAX. UNIT  
collector cut-off current  
15  
5
nA  
μA  
nA  
IE = 0; VCB = 30 V; Tj = 150 °C  
IC = 0; VEB = 5 V  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
100  
IC = 2 mA; VCE = 5 V; see Figs 2 and 3  
BC849BW; BC850BW  
BC849CW; BC850CW  
200  
420  
11  
450  
800  
250  
600  
700  
770  
3
VCEsat  
collector-emitter saturation  
voltage  
IC = 10 mA; IB = 0.5 mA  
mV  
mV  
mV  
mV  
pF  
IC = 100 mA; IB = 5 mA; note 1  
IC = 2 mA; VCE = 5 V  
VBE  
base-emitter voltage  
580  
IC = 10 mA; VCE = 5 V  
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = ic = 0; VEB = 500 mV; f = 1 MHz  
IC = 10 mA; VCE = 5 V; f = 100 MHz  
pF  
100  
MHz  
dB  
F
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;  
4
f = 10 Hz to 15.7 kHz  
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;  
4
dB  
f = 1 kHz; B = 200 Hz  
Note  
1. Pulse test: tp 300 μs; δ ≤ 0.02.  
1999 Apr 12  
3
 
 
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC849W; BC850W  
MBH724  
300  
V
= 5 V  
h
CE  
FE  
200  
100  
0
10  
2  
1  
2
3
10  
1
10  
10  
10  
I
(mA)  
C
BC849BW; BC850BW.  
Fig.2 DC current gain; typical values.  
MBH725  
600  
V
= 5 V  
CE  
h
FE  
400  
200  
0
10  
2  
1  
2
3
10  
1
10  
10  
10  
I
(mA)  
C
BC849CW; BC850CW.  
Fig.3 DC current gain; typical values.  
1999 Apr 12  
4
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC849W; BC850W  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT323  
D
B
E
A
X
H
y
v M  
A
E
3
Q
A
A
1
c
1
2
L
p
e
1
b
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1  
0.8  
0.4  
0.3  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT323  
SC-70  
97-02-28  
1999 Apr 12  
5
NXP Semiconductors  
Product data sheet  
NPN general purpose transistors  
BC849W; BC850W  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
1999 Apr 12  
6
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/03/pp7  
Date of release: 1999 Apr 12  
Document order number: 9397 750 05587  

相关型号:

BC850C

NPN general purpose transistors
NXP

BC850C

NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
INFINEON

BC850C

Surface mount Si-Epitaxial PlanarTransistors
DIOTEC

BC850C

General Purpose Transistor NPN Silicon
WEITRON

BC850C

NPN GENERAL PURPOSE TRANSISTORS
PANJIT

BC850C

NPN General Purpose Transistors
KEXIN

BC850C

Low current (max. 100 mA) Low voltage (max. 45 V).
TYSEMI

BC850C

General Purpose Transistors
ETL

BC850C

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CENTRAL

BC850C

NPN general purpose transistorProduction
NEXPERIA

BC850C(SOT-23)

Small Signal Bipolar Transistor, 0.1A I(C), NPN
UTC

BC850C,215

TRANS NPN 45V 0.1A SOT23
ETC