BC856S [NXP]
PNP general purpose double transistor; PNP通用双晶体管
| 型号： | BC856S |
| 厂家： | 
NXP |
| 描述： | PNP general purpose double transistor |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
BC856S
PNP general purpose double
transistor
Product specification
1999 Aug 24
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
FEATURES
• Two transistors in one package
• Reduces number of components and board space
6
5
4
handbook, halfpage
• No mutual interference between the transistors.
6
5
2
4
3
TR2
APPLICATIONS
TR1
• General purpose switching and small signal
amplification.
1
1
2
3
Top view
MAM339
DESCRIPTION
PNP double transistor in an SC-88 (SOT363) plastic six
lead package.
Fig.1 Simplified outline (SC-88) and symbol.
PINNING
PIN
DESCRIPTION
MARKING
1, 4
2, 5
6, 3
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
TYPE NUMBER
BC856S
MARKING CODE
collector
5Ft
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
−
−
−
−
−
−80
V
collector-emitter voltage
emitter-base voltage
open base
−65
V
open collector
−5
V
collector current (DC)
total power dissipation
storage temperature
−100
200
+150
150
+150
mA
mW
°C
°C
°C
Ptot
Tamb ≤ 25 °C
Tstg
Tj
−65
−
junction temperature
Tamb
operating ambient temperature
−65
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
1999 Aug 24
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
416
K/W
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
Per transistor
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−
−
−
−
−
−
−
−
−
−15
nA
µA
nA
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
−5
IEBO
hFE
emitter cut-off current
DC current gain
−100
−
IC = −2 mA; VCE = −5 V
110
−
VCEsat
collector-emitter saturation IC = −10 mA; IB = −0.5 mA
voltage
−100
−300
−
mV
mV
mV
IC = −100 mA; IB = −5 mA; note 1
−
VBEsat
base-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
700
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
−
2.5
pF
IC = −10 mA; VCE = −5 V;
100
−
MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Aug 24
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
MCD763
MCD764
4
1200
10
handbook, halfpage
handbook, halfpage
V
BE
V
(mV)
CEsat
1000
(mV)
3
10
(1)
(2)
800
600
400
200
2
10
(1)
(3) (2)
(3)
10
10
−1
2
3
−2
−1
2
I
3
1
10
10
10
10
10
1
10
10
10
(mA)
I
(mA)
C
C
IC/IB = 20.
VCE = 5 V.
(1) Tamb = 150 °C.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
(2)
Tamb = 25 °C.
T
(3) Tamb = −55 °C.
Fig.2 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MCD765
500
h
FE
400
(1)
300
(2)
200
(3)
100
0
10
−2
−1
2
3
10
1
10
10
10
I
(mA)
C
VCE = 5 V.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
Fig.4 DC current gain as a function of collector current; typical values.
4
1999 Aug 24
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
1999 Aug 24
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 24
6
Philips Semiconductors
Product specification
PNP general purpose double transistor
BC856S
NOTES
1999 Aug 24
7
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67
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/01/pp8
Date of release: 1999 Aug 24
Document order number: 9397 750 06099
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