BC857CF,115 [NXP]
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal;
| 型号： | BC857CF,115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal |
| 文件： | 总12页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC857F series
PNP general purpose transistors
Product specification
2000 Dec 04
Supersedes data of 2000 Oct 23
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
3
handbook, halfpage
3
PNP transistor in a SC-89 (SOT490) plastic package.
NPN complement: BC847F series.
1
2
1
2
MARKING
Top view
MAM411
TYPE NUMBER
BC857AF
MARKING CODE
3E
3F
3G
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
BC857BF
BC857CF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN. MAX. UNIT
−
−50
−45
−5
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−
V
open collector
−
V
−
−100
−200
−100
250
mA
mA
mA
mW
ICM
IBM
−
−
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−
−65
−
+150 °C
150 °C
+150 °C
Tamb
−65
Note
1. Transistor mounted on a FR4 printed-circuit board.
2000 Dec 04
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
in free air; note 1
VALUE
UNIT
thermal resistance from junction to ambient
500
K/W
1. Transistor mounted on a FR4 printed-circuit board.
CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
ICBO collector-base cut-off current VCB = −30 V; IE = 0
CONDITIONS
MIN. MAX. UNIT
−
−
−
−15
−5
nA
µA
nA
V
CB = −30 V; IE = 0; Tj = 150 °C
IEBO
hFE
emitter cut-off current
DC current gain
BC857AF
VEB = −5 V; IC = 0
−100
IC = −2 mA; VCE = −5 V
125
220
420
−600
−
250
475
800
−750
−820
−200
−400
2.5
BC857BF
BC857CF
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
mV
mV
mV
mV
pF
IC = −10 mA; VCE = −5 V
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
IC = −100 mA; IB = −5 mA; note 1
VCB = −10 V; IE = Ie = 0; f = 1 MHz
VCE = −5 V; IC = −10 mA; f = 100 MHz
−
Cc
fT
collector capacitance
transition frequency
noise figure
−
100
−
−
MHz
dB
F
IC = −200 µA; VCE = −5 V; Rs = 2 kΩ;
10
f = 1 kHz; B = 200 Hz
Note
1. Pulsed test: tp ≤ 300 µs; δ ≤ 0.02.
2000 Dec 04
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
GRAPHICAL INFORMATION BC857AF
MGT711
MGT712
500
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
−1000
400
(1)
(2)
(1)
−800
−600
−400
−200
0
300
(2)
200
(3)
(3)
100
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
Fig.2 DC current gain; typical values.
MGT713
MGT714
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20.
IC/IB 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
GRAPHICAL INFORMATION BC857BF
MGT715
MGT716
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(1)
400
(3)
(2)
200
(3)
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
Fig.6 DC current gain; typical values.
MGT717
MGT718
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20.
IC/IB 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
GRAPHICAL INFORMATION BC857CF
MGT719
MGT720
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
(1)
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(2)
400
(3)
(3)
200
0
−10
−2
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MGT721
MGT722
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
(mA)
I
C
C
IC/IB = 20.
IC/IB 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
6
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
2000 Dec 04
7
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 04
8
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
NOTES
2000 Dec 04
9
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
NOTES
2000 Dec 04
10
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857F series
NOTES
2000 Dec 04
11
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70
SCA
© Philips Electronics N.V. 2000
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Printed in The Netherlands
613514/04/pp12
Date of release: 2000 Dec 04
Document order number: 9397 750 07661
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