BC857M [NXP]
PNP general purpose transistors; PNP通用晶体管
| 型号： | BC857M |
| 厂家： | 
NXP |
| 描述： | PNP general purpose transistors |
| 文件： | 总10页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC857M series
PNP general purpose transistors
Product specification
2004 Mar 10
Supersedes data of 2003 Jul 15
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
FEATURES
QUICK REFERENCE DATA
SYMBOL
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
−45
V
• Board space 1.3 × 0.9 mm
collector current (DC)
peak collector current
−100
−200
mA
mA
• Power dissipation comparable to SOT23.
ICM
APPLICATIONS
PINNING
PIN
• General purpose small signal DC
DESCRIPTION
• Low and medium frequency AC applications
1
2
3
base
• Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
emitter
collector
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
3
2
handbook, halfpage
2
1
3
MARKING
1
Bottom view
MAM469
TYPE NUMBER
BC857AM
MARKING CODE
D1
D2
D3
BC857BM
BC857CM
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BC857AM
BC857BM
BC857CM
−
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
SOT883
2004 Mar 10
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−45
open collector
−5
−100
−200
−100
mA
mA
mA
ICM
IBM
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
−
−
250
mW
mW
°C
note 2
430
Tstg
Tj
storage temperature
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
note 1
note 2
500
290
K/W
K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
2004 Mar 10
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −30 V; IE = 0
MIN.
MAX.
−15
UNIT
nA
ICBO
collector-base cut-off current
−
−
−
VCB = −30 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
−5
µA
IEBO
hFE
emitter-base cut-off current
DC current gain
BC857AM
−100
nA
VCE = −5 V; IC = −2 mA
125
220
420
−600
−
250
475
800
−750
−820
−200
−400
2.5
BC857BM
BC857CM
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
mV
mV
mV
mV
pF
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA; note 1
−
−
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
VCE = −5 V; IC = −10 mA;
100
−
MHz
f = 100 MHz
F
noise figure
IC = −200 µA; VCE = −5 V;
−
10
dB
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Mar 10
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857AM
MLE188
MLE189
500
−1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
400
−1000
(1)
(1)
(2)
300
−800
−600
−400
−200
(2)
200
(3)
(3)
100
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
T
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
Fig.2 DC current gain; typical values.
MLE190
MLE191
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−1000
(1)
3
−10
(2)
−800
(3)
−600
(1)
(3)
2
−10
(2)
−400
−200
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
(mA)
I
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857BM
MLE192
MLE193
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
800
−1000
(1)
(2)
600
(1)
−800
−600
−400
−200
400
(2)
(3)
200
(3)
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
T
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
Fig.6 DC current gain; typical values.
MLE194
MLE195
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−1000
(1)
3
−10
(2)
−800
(3)
−600
(1)
(3)
2
−10
(2)
−400
−200
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
I
(mA)
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857CM
MLE196
MLE197
1000
−1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(1)
(mV)
800
−1000
(1)
600
−800
−600
(2)
(3)
(2)
400
(3)
200
−400
−200
0
−10
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2)
Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MLE198
MLE199
4
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−1000
(1)
3
−10
(2)
−800
(3)
−600
(1)
(3)
2
−10
(2)
−400
−200
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
I
(mA)
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
7
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2004 Mar 10
8
Philips Semiconductors
Product specification
PNP general purpose transistors
BC857M series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 10
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Mar 10
Document order number: 9397 750 12839
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