BC858BF [NXP]
PNP general purpose transistors; PNP通用晶体管型号: | BC858BF |
厂家: | NXP |
描述: | PNP general purpose transistors |
文件: | 总8页 (文件大小:44K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC856F; BC857F; BC858F series
PNP general purpose transistors
1999 May 21
Preliminary specification
Supersedes data of 1998 Nov 10
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
FEATURES
PINNING
PIN
• Power dissipation comparable to SOT23
• Low current (max. 100 mA)
DESCRIPTION
1
2
3
base
• Low voltage (max. 65 V).
emitter
collector
APPLICATIONS
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
3
handbook, halfpage
PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
3
NPN complements: BC846F, BC847F and BC848F series.
1
2
MARKING
1
2
Top view
MAM411
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC856AF
BC856BF
BC857AF
BC857BF
3A
3B
3E
3F
BC857CF
BC858AF
BC858BF
BC858CF
3G
3J
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
3K
3L
1999 May 21
2
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BC856AF; BC856BF
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
collector-emitter voltage
BC856AF; BC856BF
−
−
−
−80
V
V
V
−50
−30
VCEO
open base
−
−
−
−
−
−
−
−
−65
BC857AF; BC857BF; BC857CF
BC858AF; BC858BF; BC858CF
emitter-base voltage
−45
−30
VEBO
IC
open collector
−5
V
collector current (DC)
−100
−200
−100
250
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
peak collector current
peak base current
total power dissipation
Tamb ≤ 25 °C; note 1
storage temperature
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21
3
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN.
MAX.
UNIT
collector cut-off current
−
−
−
−15
−5
nA
µA
nA
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IEBO
hFE
emitter cut-off current
−100
DC current gain
IC = −2 mA; VCE = −5 V
BC856AF; BC857AF; BC858AF
BC856BF; BC857BF; BC858BF
BC857CF; BC858CF
125
220
420
−
250
475
800
−200
−400
−750
−820
2.5
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA; note 1
mV
mV
mV
mV
pF
−
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600
−
IC = −10 mA; VCE = −5 V
Cc
fT
collector capacitance
transition frequency
noise figure
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
MHz
dB
F
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 220 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
1999 May 21
5
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
1999 May 21
6
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
NOTES
1999 May 21
7
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© Philips Electronics N.V. 1999
SCA65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 21
Document order number: 9397 750 05848
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