BC869-16T/R [NXP]
TRANSISTOR 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
| 型号： | BC869-16T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| 文件： | 总11页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BC869
PNP medium power transistor;
20 V, 1 A
Product data sheet
2004 Nov 08
Supersedes data of 2003 Dec 02
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
FEATURES
QUICK REFERENCE DATA
• High current
SYMBOL
PARAMETER
MIN. MAX. UNIT
• Three current gain selections
• 1.2 W total power dissipation.
VCEO
collector-emitter
voltage
−
−20
V
IC
collector current (DC)
peak collector current
DC current gain
BC869
−
−
−1
−2
A
A
ICM
hFE
APPLICATIONS
• Linear voltage regulators
• High side switch
85
375
250
375
−
−
−
BC869-16
100
160
• Supply line switch
• MOSFET driver
BC869-25
• Audio (pre-) amplifier.
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
BC869
MARKING
EIAJ
PHILIPS
SOT89
SOT89
SOT89
SC-62
SC-62
SC-62
CEC
CGC
CHC
BC869-16
BC869-25
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
DESCRIPTION
BC869
emitter
collector
base
2
2
3
3
1
3
2
1
sym079
2004 Nov 08
2
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
BC869
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
BC869-16
BC869-25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−32
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
−
−
−
−
−
−
V
V
V
A
A
open base
−20
−5
open collector
−1
ICM
−2
IBM
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
notes 1 and 2
notes 1 and 3
notes 1 and 4
−
−
−
0.5
W
W
W
°C
°C
°C
0.85
1.2
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
+150
Tamb
−65
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08
3
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE323
1.6
handbook, halfpage
P
tot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
0
-65
-5
55
115
175
(°C)
T
amb
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
Tamb ≤ 25 °C
VALUE
UNIT
Rth(j-a)
notes 1 and 2
notes 1 and 3
notes 1 and 4
250
147
104
20
K/W
K/W
K/W
K/W
Rth(j-s)
thermal resistance from junction to solder point Tamb ≤ 25 °C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08
4
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE324
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
t
p
P
δ =
T
(10)
1
t
t
p
T
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
handbook, halfpage
32 mm
2 mm
2.8 mm
1.8 mm
10 mm
3.5 mm
40 mm
10 mm
1.1
mm
2.5 mm
0.5 mm
1 mm
0.7 mm
0.8 mm
3.7 mm
5 mm
3.96 mm
MLE321
1.6 mm
MLE322
Fig.3 SOT89 standard mounting conditions for
reflow soldering.
Fig.4 Printed-circuit board for SOT89; mounting
pad for collector 1 cm2.
2004 Nov 08
5
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
VCB = −25 V; IE = 0 A
VCB = −25 V; IE = 0 A
VEB = −5 V; IC = 0 A
BC869
−
−
−
−
−100
−10
nA
μA
nA
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−100
VCE = −10 V; IC = −5 mA
VCE = −1 V; IC = −500 mA
VCE = −1 V; IC = −1 A
BC869−16
50
85
60
−
−
−
−
375
−
VCE = −1 V; IC = −500 mA
BC869−25
100
−
250
VCE = −1 V; IC = −500 mA
160
−
−
375
−500
−700
−1
VCEsat
VBE
collector-emitter saturation voltage IC = −1 A; IB = −100 mA
−
mV
mV
V
base-emitter voltage
VCE = −10 V; IC = −5 mA
VCE = −1 V; IC = −1 A
−
−
−
−
Cc
fT
collector capacitance
transition frequency
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
−
28
−
pF
VCE = −5 V; IC = −50 mA;
40
140
−
MHz
f = 100 MHz
2004 Nov 08
6
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE317
MLE314
−2.4
C
−1
handbook, halfpage
handbook, halfpage
I
(A)
−2.0
(1)
V
(2)
(3)
BE
(V)
(4)
−1.6
(5)
(6)
−1.2
(7)
(8)
−0.8
(9)
−0.4
(10)
−1
−10
0
−4
−3
−2
−1
−10
−10
−10
−10
−1
−10
0
−1
−2
−3
−4
−5
(V)
I
(A)
V
C
CE
BC869-16.
(1)
I
B = −18 mA.
(5)
I
B = −10.8 mA.
(9)
IB = −3.6 mA.
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
(10) IB = −1.8 mA.
BC869-16.
VCE = −1 V.
Fig.5 Collector current as a function of
collector-emitter voltage; typical values.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
MLE319
MLE320
3
10
−1
handbook, halfpage
handbook, halfpage
V
CEsat
h
(V)
FE
−1
−10
−2
−10
2
−3
10
−10
−4
−3
−2
−1
−4
−3
−2
−1
−10
−10
−10
−10
−1
−10
−10
−10
−10
−10
−1
−10
(A)
I
I
(A)
C
C
BC869-16.
VCE = −1 V.
BC869-16.
IC/IB = 10.
Fig.7 DC current gain as a function of collector
current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08
7
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE313
MLE318
−2.4
C
−1
handbook, halfpage
handbook, halfpage
I
(A)
−2.0
(1)
V
(2)
(3)
BE
(V)
(4)
−1.6
(5)
(6)
−1.2
(7)
(8)
−0.8
(9)
(10)
−0.4
−1
−10
0
−4
−3
−2
−1
0
−1
−2
−3
−4
−5
(V)
−10
−10
−10
−10
−1
−10
I
(A)
V
C
CE
BC869-25.
(1) IB = −12 mA.
(5) IB = −7.2 mA.
(6) IB = −6.0 mA.
(7) IB = −4.8 mA.
(8) IB = −3.6 mA.
(9) IB = −2.4 mA.
(10) IB = −1.2 mA.
(2) IB = −10.8 mA.
(3) IB = −9.6 mA.
(4) IB = −8.4 mA.
BC869-25.
VCE = −1 V.
Fig.9 Collector current as a function of
collector-emitter voltage; typical values.
Fig.10 Base-emitter voltage as function of collector
current; typical values.
MLE315
MLE316
3
10
−1
handbook, halfpage
handbook, halfpage
V
CEsat
(V)
h
FE
−1
−10
−2
−10
−3
2
−10
10
−4
−3
−2
−1
−4
−3
−2
−1
−10
−10
−10
−10
−1
−10
(mA)
−10
−10
−10
−10
−1
−10
I
I
(A)
C
C
BC869-25.
VCE = −1 V.
BC869-25.
IC/IB = 10.
Fig.11 DC current gain as a function of collector
current; typical values.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08
8
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Nov 08
9
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 08
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/06/pp11
Date of release: 2004 Nov 08
Document order number: 9397 750 13861
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