BCM847DS/T2 [NXP]
TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6, BIP General Purpose Small Signal;
| 型号： | BCM847DS/T2 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSOP-6, BIP General Purpose Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCM847BV; BCM847BS;
BCM847DS
NPN/NPN matched double transistors
Rev. 06 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
Product overview
Type number
Package
NXP
PNP/PNP
complement
Matched version of
JEITA
-
BCM847BV
BCM847BS
BCM847DS
SOT666
SOT363
SOT457
BCM857BV
BCM857BS
BCM857DS
BC847BV
BC847BS
-
SC-88
SC-74
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO collector-emitter voltage
IC
open base
-
-
45
V
collector current
DC current gain
-
-
100
450
mA
hFE
VCE = 5 V;
IC = 2 mA
200
290
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
Table 2.
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
hFE1/hFE2
[1]
[2]
hFE matching
VCE = 5 V;
IC = 2 mA
0.9
-
1
-
-
VBE1−VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
2
mV
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
4
5
1
2
3
1
2
3
6
collector TR1
001aab555
sym020
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
SOT666
SOT363
SOT457
BCM847BV
BCM847BS
BCM847DS
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads
SC-88
SC-74
4. Marking
Table 5.
Marking codes
Type number
BCM847BV
BCM847BS
BCM847DS
Marking code[1]
3A
M1*
R6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
2 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
-
-
-
-
-
50
45
V
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
6
V
100
200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT666
Tamb ≤ 25 °C
[1][2]
[1]
-
-
-
200
200
250
mW
mW
mW
SOT363
[1]
SOT457
Per device
Ptot
total power dissipation
SOT666
Tamb ≤ 25 °C
[1][2]
[1]
-
300
mW
mW
mW
°C
SOT363
-
300
[1]
SOT457
-
380
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1][2]
[1]
SOT666
-
-
-
-
-
-
625
625
500
K/W
K/W
K/W
SOT363
[1]
SOT457
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
3 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
Table 7.
Thermal characteristics …continued
Symbol Parameter
Per device
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1][2]
[1]
SOT666
-
-
-
-
-
-
416
416
328
K/W
K/W
K/W
SOT363
[1]
SOT457
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions
Per transistor
Min
Typ
Max
Unit
ICBO
collector-base cut-off VCB = 30 V;
-
-
-
-
15
5
nA
current
IE = 0 A
VCB = 30 V;
IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V;
IC = 0 A
-
-
100
-
nA
DC current gain
VCE = 5 V;
IC = 10 µA
-
250
290
50
200
760
910
660
-
VCE = 5 V;
IC = 2 mA
200
450
200
400
-
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
IC = 10 mA;
IB = 0.5 mA
-
mV
mV
mV
mV
mV
mV
pF
IC = 100 mA;
IB = 5 mA
-
[1]
[1]
[2]
[2]
base-emitter
saturation voltage
IC = 10 mA;
IB = 0.5 mA
-
IC = 100 mA;
IB = 5 mA
-
-
base-emitter voltage
VCE = 5 V;
IC = 2 mA
610
710
770
1.5
VCE = 5 V;
IC = 10 mA
-
-
Cc
Ce
collector capacitance VCB = 10 V;
IE = ie = 0 A;
-
f = 1 MHz
emitter capacitance
VEB = 0.5 V;
IC = ic = 0 A;
f = 1 MHz
-
11
-
pF
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
4 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
100
250
-
MHz
NF
noise figure
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
-
-
2.8
3.3
-
-
dB
dB
VCE = 5 V;
IC = 0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
[3]
[4]
hFE1/hFE2
hFE matching
VCE = 5 V;
IC = 2 mA
0.9
-
1
-
-
VBE1−VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
2
mV
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
5 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
006aaa532
006aaa533
0.20
600
I
(mA) = 4.50
4.05
B
I
C
3.60
(A)
0.16
h
FE
3.15
2.70
2.25
1.80
1.35
400
200
0
(1)
(2)
(3)
0.12
0.08
0.04
0
0.90
0.45
−2
−1
2
3
0
2
4
6
8
10
(V)
10
10
1
10
10
10
I (mA)
C
V
CE
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Collector current as a function of
Fig 2. DC current gain as a function of collector
current; typical values
collector-emitter voltage; typical values
006aaa534
006aaa535
1.3
10
V
BEsat
(V)
V
CEsat
(V)
1.1
0.9
0.7
0.5
0.3
0.1
1
(1)
(2)
(3)
−1
10
10
(1)
(2)
(3)
−2
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
6 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
006aaa536
006aaa537
3
1
10
V
BE
(V)
f
T
(MHz)
0.8
2
10
0.6
0.4
10
−1
2
3
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V; Tamb = 25 °C
VCE = 5 V; Tamb = 25 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Transition frequency as a function of collector
current; typical values
006aaa538
006aaa539
5
15
C
e
C
c
(pF)
13
(pF)
4
3
2
1
0
11
9
7
5
0
2
4
6
8
10
(V)
0
2
4
6
V
V
(V)
EB
CB
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
7 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
8. Application information
V+
V
CC
OUT1
IN1
OUT2
IN2
TR1
TR2
R1
l
out
TR1
TR2
V−
006aaa523
006aaa525
Fig 9. Current mirror
Fig 10. Differential amplifier
9. Package outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
06-03-16
Dimensions in mm
04-11-08
Fig 11. Package outline SOT666
Fig 12. Package outline SOT363 (SC-88)
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 13. Package outline SOT457 (SC-74)
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
8 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
BCM847BV
BCM847BS
BCM847DS
SOT666 2 mm pitch, 8 mm tape and reel
-
-
-315
-
4 mm pitch, 8 mm tape and reel
SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-
-115
-
-
-
-
-
-
[2]
[3]
[2]
[3]
-115
-125
-115
-125
-
-
-
-
-135
-165
-135
-165
SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
9 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
11. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOT666
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 15. Reflow soldering footprint SOT363 (SC-88)
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
10 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
1.5
solder lands
2.5
0.3
4.5
solder resist
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 16. Wave soldering footprint SOT363 (SC-88)
3.45
1.95
solder lands
solder resist
occupied area
solder paste
0.95
0.45 0.55
2.825
3.30
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74)
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
11 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
msc423
1.40
4.30
Dimensions in mm
Fig 18. Wave soldering footprint SOT457 (SC-74)
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
12 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
12. Revision history
Table 10. Revision history
Document ID
Release date
20090828
Data sheet status
Change notice
Supersedes
BCM847BV_BS_DS_6
Modifications:
Product data sheet
-
BCM847BV_BS_DS_5
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 12 “Package outline SOT363 (SC-88)”: updated
• Figure 14 “Reflow soldering footprint SOT666”: updated
• Figure 15 “Reflow soldering footprint SOT363 (SC-88)”: updated
• Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated
• Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated
BCM847BV_BS_DS_5
BCM847BS_DS_4
BCM847BS_DS_3
BCM847BS_2
20060627
20060216
20060123
20050406
20040914
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
-
BCM847BS_DS_4
BCM847BS_DS_3
BCM847BS_2
BCM847BS_1
-
BCM847BS_1
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
13 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BCM847BV_BS_DS_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 28 August 2009
14 of 15
BCM847BV/BS/DS
NXP Semiconductors
NPN/NPN matched double transistors
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 August 2009
Document identifier: BCM847BV_BS_DS_6
相关型号：
BCM8512
DWDM TRANSPORT PROCESSOR WITH INTEGRATED 10G TRANSCEIVER, G.709 FEC, SONET/SDH, AND 10GE PERFORMANCE MONITOR
BOARDCOM
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