首页 |元器件品牌

BCP55,135 [NXP]

60 V, 1 A NPN medium power transistor SC-73 4-Pin;
BCP55,135
型号： BCP55,135
厂家： NXP    NXP
描述：

60 V, 1 A NPN medium power transistor SC-73 4-Pin

开关 光电二极管 晶体管
文件： 总15页 (文件大小：143K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BC637; BCP55; BCX55  
60 V, 1 A NPN medium power transistors  
Rev. 07 — 25 June 2007  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistor series.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
PNP complement  
JEITA  
SC-43A  
SC-73  
SC-62  
JEDEC  
TO-92  
-
BC637[2]  
BCP55  
BCX55  
SOT54  
SOT223  
SOT89  
BC638  
BCP52  
BCX52  
TO-243  
[1] Valid for all available selection groups.  
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
I High current  
I Two current gain selections  
I High power dissipation capability  
1.3 Applications  
I Linear voltage regulators  
I Low-side switches  
I MOSFET drivers  
I Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
-
Typ  
Max  
60  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
-
1
A
ICM  
hFE  
peak collector current  
DC current gain  
single pulse; tp ≤ 1 ms  
-
1.5  
250  
160  
250  
A
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
63  
63  
100  
hFE selection -10  
hFE selection -16  
 
 
 
 
 
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
2. Pinning information  
Table 3.  
Pinning  
Pin  
Description  
Simplified outline  
Symbol  
SOT54  
1
2
3
base  
2
collector  
emitter  
1
2
3
1
3
001aab347  
sym056  
SOT54A  
1
2
3
base  
2
collector  
emitter  
1
2
1
3
3
001aab348  
sym056  
SOT54 variant  
1
2
3
base  
2
collector  
emitter  
1
2
3
1
3
001aab447  
sym056  
SOT223  
1
2
3
4
base  
4
2, 4  
collector  
emitter  
collector  
1
1
2
3
3
sym016  
SOT89  
1
2
3
emitter  
collector  
base  
2
3
1
3
2
1
sym042  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
2 of 15  
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
3. Ordering information  
Table 4.  
Ordering information  
Type number[1] Package  
Name  
Description  
Version  
BC637[2]  
BCP55  
BCX55  
SC-43A plastic single-ended leaded (through hole) package;  
3 leads  
SOT54  
SC-73  
plastic surface-mounted package with increased  
heatsink; 4 leads  
SOT223  
SC-62  
plastic surface-mounted package; collector pad for good SOT89  
heat transfer; 3 leads  
[1] Valid for all available selection groups.  
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).  
4. Marking  
Table 5.  
Marking codes  
Type number  
BC637  
Marking code  
C637  
BC637-16  
BCP55  
C63716  
BCP55  
BCP55/10  
BCP55/16  
BE  
BCP55-10  
BCP55-16  
BCX55  
BCX55-10  
BCX55-16  
BG  
BM  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
3 of 15  
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
60  
60  
5
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current  
-
-
-
-
-
V
open collector  
V
1
A
ICM  
peak collector current  
single pulse;  
1.5  
A
tp ≤ 1 ms  
IBM  
Ptot  
peak base current  
single pulse;  
tp ≤ 1 ms  
-
0.2  
A
total power dissipation  
BC637  
Tamb ≤ 25 °C  
[1]  
[1]  
[2]  
[1]  
[2]  
[3]  
-
0.83  
0.64  
0.96  
0.5  
W
W
W
W
W
W
°C  
°C  
°C  
BCP55  
-
-
BCX55  
-
-
0.85  
1.25  
150  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
−65  
−65  
+150  
+150  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
4 of 15  
 
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
006aaa085  
006aaa086  
1.6  
1.6  
P
tot  
P
tot  
(W)  
(W)  
1.2  
1.2  
(1)  
0.8  
0.4  
0
0.8  
(2)  
0.4  
0
−75  
−25  
0
25  
75  
125  
175  
(°C)  
−75  
−25  
0
25  
75  
125  
T
175  
(°C)  
T
amb  
amb  
FR4 PCB, standard footprint  
(1) FR4 PCB, mounting pad for collector 1 cm2  
(2) FR4 PCB, standard footprint  
Fig 1. Power derating curve SOT54  
Fig 2. Power derating curves SOT223  
006aaa087  
1.6  
P
tot  
(W)  
(1)  
1.2  
(2)  
(3)  
0.8  
0.4  
0
−75  
−25  
0
25  
75  
125  
175  
(°C)  
T
amb  
(1) FR4 PCB, mounting pad for collector 6 cm2  
(2) FR4 PCB, mounting pad for collector 1 cm2  
(3) FR4 PCB, standard footprint  
Fig 3. Power derating curves SOT89  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
5 of 15  
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
6. Thermal characteristics  
Table 7.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from  
junction to ambient  
in free air  
[1]  
[1]  
[2]  
[1]  
[2]  
[3]  
BC637  
BCP55  
-
-
-
-
-
-
-
-
-
-
-
-
150  
195  
130  
250  
145  
100  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
BCX55  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
BC637  
BCP55  
BCX55  
-
-
-
-
-
-
40  
17  
30  
K/W  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
006aaa088  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
1
2
0.75  
10  
0.5  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;  
typical values  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
6 of 15  
 
 
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
006aaa814  
3
10  
duty cycle =  
Z
th(j-a)  
(K/W)  
1.0  
0.75  
0.5  
0.33  
2
10  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
−1  
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;  
typical values  
006aaa089  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
2
1
10  
0.75  
0.5  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for collector 1 cm2  
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;  
typical values  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
7 of 15  
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
006aaa815  
3
10  
duty cycle =  
Z
th(j-a)  
(K/W)  
1.0  
0.75  
0.5  
2
10  
0.33  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
0
1
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;  
typical values  
006aaa090  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
1
2
10  
0.75  
0.5  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for collector 1 cm2  
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;  
typical values  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
8 of 15  
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
006aaa816  
3
10  
duty cycle =  
Z
th(j-a)  
(K/W)  
1.0  
2
10  
0.75  
0.5  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
−1  
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for collector 6 cm2  
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;  
typical values  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
Max  
100  
10  
Unit  
nA  
ICBO  
collector-base cut-off  
VCB = 30 V; IE = 0 A  
-
-
-
-
current  
VCB = 30 V; IE = 0 A;  
µA  
Tj = 150 °C  
IEBO  
hFE  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
100  
nA  
DC current gain  
VCE = 2 V  
IC = 5 mA  
63  
63  
40  
-
-
-
-
IC = 150 mA  
IC = 500 mA  
VCE = 2 V  
250  
-
[1]  
DC current gain  
hFE selection -10  
hFE selection -16  
IC = 150 mA  
IC = 150 mA  
IC = 500 mA; IB = 50 mA  
63  
100  
-
-
-
-
160  
250  
500  
[1]  
[1]  
VCEsat  
collector-emitter  
saturation voltage  
mV  
VBE  
Cc  
base-emitter voltage  
collector capacitance  
VCE = 2 V; IC = 500 mA  
-
-
-
1
-
V
VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
6
pF  
fT  
transition frequency  
VCE = 5 V; IC = 50 mA;  
f = 100 MHz  
100  
180  
-
MHz  
[1] Pulse test: tp ≤ 300 µs; δ = 0.02.  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
9 of 15  
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
006aaa084  
006aaa080  
1.6  
300  
I
(mA) = 50 45 40 35 30  
B
I
C
h
FE  
(A)  
1.2  
(1)  
25  
20  
200  
15  
10  
0.8  
0.4  
0
(2)  
5
100  
(3)  
0
10  
−1  
2
3
4
0
0.4  
0.8  
1.2  
1.6  
V
2.0  
(V)  
1
10  
10  
10  
10  
(mA)  
I
CE  
C
VCE = 2 V  
Tamb = 25 °C  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 10. DC current gain as a function of collector  
current; typical values  
Fig 11. Collector current as a function of  
collector-emitter voltage; typical values  
006aaa081  
006aaa082  
1.2  
1
V
BE  
(V)  
V
CEsat  
(V)  
(1)  
(2)  
0.8  
−1  
10  
0.4  
(3)  
(1)  
(2)  
(3)  
2
−2  
0
10  
10  
−1  
2
3
4
−1  
3
4
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
I (mA)  
C
I
C
VCE = 2 V  
IC/IB = 10  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 12. Base-emitter voltage as a function of collector  
current; typical values  
Fig 13. Collector-emitter saturation voltage as a  
function of collector current; typical values  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
10 of 15  
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
8. Package outline  
0.45  
0.38  
4.2  
3.6  
0.45  
0.38  
4.2  
3.6  
0.48  
0.40  
3 max  
1
0.48  
0.40  
1
2
3
2
4.8  
4.4  
5.08  
4.8  
4.4  
2.54  
1.27  
2.54  
3
5.2  
5.0  
14.5  
12.7  
5.2  
5.0  
14.5  
12.7  
Dimensions in mm  
04-11-16  
Dimensions in mm  
04-06-28  
Fig 14. Package outline SOT54 (SC-43A/TO-92)  
Fig 15. Package outline SOT54A  
0.45  
0.38  
6.7  
6.3  
3.1  
2.9  
1.8  
1.5  
4.2  
3.6  
1.27  
4
2.5  
1.1  
0.7  
0.48  
max  
0.40  
1
7.3 3.7  
6.7 3.3  
2
4.8  
4.4  
2.54  
1.27  
3
1
2
3
0.8  
0.6  
0.32  
0.22  
5.2  
5.0  
14.5  
12.7  
2.3  
4.6  
Dimensions in mm  
05-01-10  
Dimensions in mm  
04-11-10  
Fig 16. Package outline SOT54 variant  
Fig 17. Package outline SOT223 (SC-73)  
4.6  
4.4  
1.8  
1.4  
1.6  
1.4  
2.6  
2.4  
4.25  
3.75  
1.2  
0.8  
1
2
3
0.53  
0.40  
0.48  
0.35  
0.44  
0.23  
1.5  
3
Dimensions in mm  
06-08-29  
Fig 18. Package outline SOT89 (SC-62/TO-243)  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
11 of 15  
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number[2] Package  
Description  
Packing quantity  
1000  
4000  
5000  
10000  
BC637  
SOT54  
bulk, straight leads  
-
-
-412  
-
SOT54A  
tape and reel, wide pitch  
tape ammopack, wide pitch  
-
-
-
-116  
-
-
-
-126  
SOT54 variant bulk, delta pinning  
-
-
-112  
-
-
-
-
BCP55  
BCX55  
SOT223  
SOT89  
8 mm pitch, 12 mm tape and reel  
-115  
-115  
-120  
-135  
-135  
-
-
-
-
[3]  
[4]  
8 mm pitch, 12 mm tape and reel; T1  
8 mm pitch, 12 mm tape and reel; T3  
[1] For further information and the availability of packing methods, see Section 12.  
[2] Valid for all available selection groups.  
[3] T1: normal taping  
[4] T3: 90° rotated taping  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
12 of 15  
 
 
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
10. Revision history  
Table 10. Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BC637_BCP55_BCX55_7 20070625  
Product data sheet  
-
BC637_BCP55_BCX55_6  
Modifications:  
• The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
• Legal texts have been adapted to the new company name where appropriate.  
• Table 1 “Product overview”: amended  
• Section 1.2 “Features”: amended  
• Section 1.3 “Applications”: amended  
• Table 2 “Quick reference data”: IC parameter redefined to collector current  
• Table 2 “Quick reference data”: ICM condition added  
• Figure 2 and 3: amended  
• Table 6 “Limiting values”: IC parameter redefined to collector current  
• Table 6 “Limiting values”: ICM condition added  
• Table 6 “Limiting values”: Ptot values for BCP55 and BCX55 adapted  
• Table 7 “Thermal characteristics”: Rth(j-a) values for BCP55 and BCX55 rounded  
• Figure 4: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient  
• Figure 4: tp parameter redefined to pulse duration  
• Figure 5: added  
• Figure 6: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient  
• Figure 6: tp parameter redefined to pulse duration  
• Figure 7: added  
• Figure 8: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient  
• Figure 8: tp parameter redefined to pulse duration  
• Figure 9: added  
• Figure 11: amended  
• Table 9 “Packing methods”: new packing method for BCX55 added  
• Section 11 “Legal information”: updated  
BC637_BCP55_BCX55_6 20050218  
Product data sheet  
CPCN200405029 BC635_637_639_4  
BCP54_55_56_5  
BCX54_55_56_4  
BC635_637_639_4  
BCP54_55_56_5  
BCX54_55_56_4  
20011010  
20030206  
20011010  
Product specification  
Product specification  
Product specification  
-
-
-
BC635_637_639_3  
BCP54_55_56_4  
BCX54_55_56_3  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
13 of 15  
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of a NXP Semiconductors product can reasonably be expected to  
11.2 Definitions  
result in personal injury, death or severe property or environmental damage.  
NXP Semiconductors accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or applications and therefore  
such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
12. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BC637_BCP55_BCX55_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 25 June 2007  
14 of 15  
 
 
 
 
 
 
BC637; BCP55; BCX55  
NXP Semiconductors  
60 V, 1 A NPN medium power transistors  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Packing information. . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2007.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 25 June 2007  
Document identifier: BC637_BCP55_BCX55_7  
 

相关型号：

BCP55-10

 NPN medium power transistors
NXP

BCP55-10

 NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON

BCP55-10

 High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
TYSEMI

BCP55-10

 60 V, 1 A NPN medium power transistorsProduction
NEXPERIA

BCP55-10,115

 60 V, 1 A NPN medium power transistor SC-73 4-Pin
NXP

BCP55-10-Q

 60 V, 1 A NPN medium power transistorsProduction
NEXPERIA

BCP55-10-TAPE-13

 TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
NXP

BCP55-10-TAPE-7

 TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
NXP

BCP55-10E6327

 Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
INFINEON

BCP55-10E6433

 Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
INFINEON

BCP55-10T

 60 V, 1 A NPN medium power transistorsProduction
NEXPERIA

BCP55-10T/R

 TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明