BCV26,235 [NXP]
BCV26; BCV46 - PNP Darlington transistors TO-236 3-Pin;
| 型号： | BCV26,235 |
| 厂家： | 
NXP |
| 描述： | BCV26; BCV46 - PNP Darlington transistors TO-236 3-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BCV26; BCV46
PNP Darlington transistors
Product data sheet
2004 Jan 13
Supersedes data of 1999 Apr 08
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BCV26; BCV46
FEATURES
PINNING
PIN
• High current (max. 500 mA)
• Low voltage (max. 60 V)
DESCRIPTION
1
2
3
base
• Very high DC current gain (min. 10000).
emitter
collector
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
handbook, halfpage
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
3
1
3
TR1
TR2
MARKING
1
2
2
TYPE NUMBER
BCV26
MARKING CODE(1)
MAM299
FD*
FE*
Top view
BCV46
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NUMBER
NAME
VERSION
BCV26
BCV46
−
SOT23
2004 Jan 13
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BCV26; BCV46
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BCV26
−
−
−40
V
V
BCV46
−80
VCES
collector-emitter voltage
BCV26
VBE = 0
−
−
−
−
−
−
−
−30
V
V
V
BCV46
−60
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−10
−500
−800
−100
250
mA
mA
mA
mW
°C
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
°C
Tamb
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BCV26; BCV46
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
collector cut-off current
BCV26
IE = 0; VCB = −30 V
−
−
−
−
−
−
−100 nA
−100 nA
−100 nA
BCV46
IE = 0; VCB = −60 V
IEBO
hFE
emitter cut-off current
DC current gain
BCV26
IC = 0; VEB = −10 V
IC = −1 mA; VCE = −5 V; (see Fig.2)
4000
2000
−
−
−
−
BCV46
DC current gain
BCV26
IC = −10 mA; VCE = −5 V; (see Fig.2)
IC = −100 mA; VCE = −5 V; (see Fig.2)
IC = −100 mA; IB = −0.1 mA
10000
4000
−
−
−
−
BCV46
DC current gain
BCV26
20000
10000
−
−
−
−
−
−
BCV46
VCEsat
collector-emitter saturation
voltage
−1
V
VBEsat
VBEon
fT
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IC = −100 mA; IB = −0.1 mA
IC = −10 mA; VCE = −5 V
−
−
−
−1.5
−1.4
−
V
−
V
IC = −30 mA; VCE = −5 V; f = 100 MHz −
220
MHz
MGD836
100000
h
FE
80000
60000
40000
20000
0
−1
2
3
−10
−10
−10
I
(mA)
C
VCE = −2 V.
Fig.2 DC current gain; typical values.
4
2004 Jan 13
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BCV26; BCV46
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Jan 13
5
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BCV26; BCV46
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Jan 13
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/05/pp7
Date of release: 2004 Jan 13
Document order number: 9397 750 12401
相关型号：
BCV26-TAPE-13
TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV26-TAPE-7
TRANSISTOR 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV26/T3
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
BCV26D87Z
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
BCV26E6327
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BCV26E6327HTSA1
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
INFINEON
BCV26E6433
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BCV26L99Z
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
BCV26LEADFREE
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明