BCV62,215 [NXP]
BCV62 - PNP general-purpose double transistors SOT-143 4-Pin;
| 型号： | BCV62,215 |
| 厂家： | 
NXP |
| 描述： | BCV62 - PNP general-purpose double transistors SOT-143 4-Pin 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
NXP
NPN complement
JEITA
BCV62
SOT143B
-
BCV61
BCV62A
BCV62B
BCV62C
BCV61A
BCV61B
BCV61C
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Applications with working point independent of temperature
Current mirrors
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
Per transistor
VCEO collector-emitter voltage
IC collector current
Transistor TR1
hFE DC current gain
open base
-
-
-
-
−30
V
−100 mA
VCE = −5 V; IC = −100 μA
VCE = −5 V; IC = −2 mA
100
100
-
-
-
800
BCV62
NXP Semiconductors
PNP general-purpose double transistors
Table 2.
Symbol
Transistor TR2
Quick reference data …continued
Parameter Conditions
Min
Typ
Max Unit
hFE
DC current gain
VCE = −5 V; IC = −2 mA
BCV62
100
100
220
420
-
-
-
-
800
250
475
800
BCV62A
BCV62B
BCV62C
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
collector TR2;
base TR1 and TR2
4
3
4
3
2
3
4
collector TR1
emitter TR1
emitter TR2
TR2
TR1
1
2
1
2
006aaa843
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
BCV62
plastic surface-mounted package; 4 leads
SOT143B
BCV62A
BCV62B
BCV62C
4. Marking
Table 5.
Marking codes
Type number
BCV62
Marking code[1]
3M*
3J*
3K*
3L*
BCV62A
BCV62B
BCV62C
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
2 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VCBO
VCEO
VEBS
IC
collector-base voltage
open emitter
open base
VCE = 0 V
-
-
-
-
-
-
−30
V
collector-emitter voltage
emitter-base voltage
collector current
−30
V
−6
V
−100
−200
−200
mA
mA
mA
ICM
peak collector current
peak base current
IBM
Per device
Ptot
[1]
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
250
mW
°C
Tj
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
Rth(j-a)
thermal resistance from junction in free air
to ambient
-
-
500
K/W
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 8.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Transistor TR1
Conditions
Min
Typ
Max Unit
ICBO
collector-base
cut-off current
VCB = −30 V; IE = 0 A
-
-
-
-
−15
−5
nA
VCB = −30 V; IE = 0 A;
Tj = 150 °C
μA
IEBO
hFE
emitter-base
cut-off current
VEB = −5 V; IC = 0 A
-
-
-
−100 nA
DC current gain
VCE = −5 V;
100
-
IC = −100 μA
VCE = −5 V; IC = −2 mA
100
-
-
800
VCEsat
collector-emitter
IC = −10 mA;
IB = −0.5 mA
−75
−300 mV
saturation voltage
IC = −100 mA;
IB = −5 mA
-
−250 −650 mV
BCV62
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
3 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
Table 8.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1]
[1]
VBEsat
base-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
-
−700
-
mV
IC = −100 mA;
IB = −5 mA
-
−850
-
mV
[2]
[2]
VBE
base-emitter voltage
transition frequency
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
−600 −650 −750 mV
-
-
-
−820 mV
fT
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
100
-
MHz
Cc
collector capacitance
noise figure
VCB = −10 V;
IE = ie = 0 A
-
-
4.5
-
-
pF
dB
NF
VCE = −5 V;
10
IC = −200 μA;RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS emitter-base voltage
VCB = 0 V; IE = −250 mA
VCB = 0 V; IE = −10 μA
VCE = −5 V; IC = −2 mA
-
-
-
−1.5
V
−400
-
mV
hFE
DC current gain
BCV62
100
100
220
420
-
-
-
-
800
250
475
800
BCV62A
BCV62B
BCV62C
Transistors TR1 and TR2
IC1/IE2
current matching
IE2 = −0.5 mA;
VCE1 = −5 V;
Tamb ≤ 25 °C
Tamb ≤ 150 °C
VCE1 = −5 V
0.7
0.7
-
-
-
-
1.3
1.3
−5
[3]
IE2
emitter current 2
mA
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
BCV62
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
4 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt711
mgt712
500
−1200
BE
V
h
FE
(mV)
−1000
400
(1)
(2)
(1)
−800
−600
−400
−200
0
300
(2)
200
(3)
(3)
100
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
I (mA)
C
−10
−1
−10
−10
−10
(mA)
I
C
VCE = −5 V
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 1. BCV62A: DC current gain as a function of
collector current; typical values
Fig 2. BCV62A: Base-emitter voltage as a function of
collector current; typical values
mgt713
mgt714
4
−10
−1200
BEsat
V
(mV)
V
(mV)
CEsat
−1000
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
C
(mA)
I
C
(mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 3. BCV62A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. BCV62A: Base-emitter saturation voltage as a
function of collector current; typical values
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
5 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt715
mgt716
1000
−1200
BE
V
h
FE
(mV)
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(1)
400
(3)
(2)
200
0
(3)
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
I (mA)
C
−10
−10
−1
−10
−10
−10
(mA)
I
C
VCE = −5 V
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. BCV62B: DC current gain as a function of
collector current; typical values
Fig 6. BCV62B: Base-emitter voltage as a function of
collector current; typical values
mgt717
mgt718
4
−10
−1200
BEsat
V
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
C
(mA)
I
C
(mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 7. BCV62B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. BCV62B: Base-emitter saturation voltage as a
function of collector current; typical values
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
6 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt719
mgt720
1000
−1200
BE
V
h
(mV)
FE
(1)
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(2)
400
(3)
(3)
200
0
−10
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
I (mA)
C
−10
−1
−10
−10
−10
(mA)
I
C
VCE = −5 V
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 9. BCV62C: DC current gain as a function of
collector current; typical values
Fig 10. BCV62C: Base-emitter voltage as a function of
collector current; typical values
mgt721
mgt722
4
−10
−1200
BEsat
V
(mV)
V
(mV)
CEsat
−1000
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
C
(mA)
I
C
(mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 11. BCV62C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 12. BCV62C: Base-emitter saturation voltage as a
function of collector current; typical values
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
7 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mbk083
−30
−V
CE1max
(V)
I
=
E2
1 mA
−20
−10
5 mA
10 mA
50 mA
0
10
−1
2
1
10
10
R
E
(Ω)
IC1/IE2 = 1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resistor
(see Figure 15)
8. Test information
A
I
C1
2
3
1
I
=
E2
−V
TR1
TR2
CE1
constant
4
006aaa841
Fig 14. Test circuit current matching
A
I
C1
2
1
I
=
E2
−V
TR1
TR2
CE1
constant
3
4
R
R
E
E
006aac001
Fig 15. Current mirror with emitter resistors
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
8 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 16. Package outline SOT143B
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-215
10000
BCV62
SOT143B
4 mm pitch, 8 mm tape and reel
-235
BCV62A
BCV62B
BCV62C
[1] For further information and the availability of packing methods, see Section 14.
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
9 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
11. Soldering
3.25
1.9
0.6
(3×)
0.5
(3×)
solder lands
solder resist
0.7 0.6
(3×) (3×)
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 17. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
occupied area
2.575
4.6
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 18. Wave soldering footprint SOT143B
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
10 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
12. Revision history
Table 10. Revision history
Document ID
BCV62 v.4
Release date
20100726
Data sheet status
Change notice
Supersedes
Product data sheet
-
BCV62_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 “Product profile”: amended
• Section 3 “Ordering information”: added
• Section 4 “Marking”: updated
• Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
• Section 8 “Test information”: added
• Figure 16: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
BCV62_3
19990408
Product specification
-
-
BCV62_CNV_2
-
BCV62_CNV_2
19970618
Product specification
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
11 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BCV62
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
12 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BCV62
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
13 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 July 2010
Document identifier: BCV62
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