BCV62B [NXP]
PNP general purpose double transistor; PNP通用双晶体管
| 型号： | BCV62B |
| 厂家： | 
NXP |
| 描述： | PNP general purpose double transistor |
| 文件： | 总8页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BCV62
PNP general purpose
double transistor
1999 Apr 08
Product specification
Supersedes data of 1997 Jun 18
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 30 V)
• Matched pair.
PIN
DESCRIPTION
1
2
3
4
collector TR2; base TR1 and TR2
collector TR1
emitter TR1
APPLICATIONS
emitter TR2
• For use in applications where the working point must be
independent of temperature
• Current mirrors.
handbook, hge
4
3
2
1
DESCRIPTION
PNP double transistor in a SOT143B plastic package.
NPN complement: BCV61.
TR2
4
TR1
3
1
2
MARKING
Top view
MAM292
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCV62
BCV62A
3Mp
3Jp
BCV62B
BCV62C
3Kp
3Lp
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage TR1
collector-emitter voltage TR1
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−30
UNIT
VCBO
VCEO
VEBS
IC
−
−
−
−
−
−
−
V
V
V
open base
VCE = 0
−30
−6
collector current (DC)
−100
−200
−200
250
mA
mA
mA
mW
°C
ICM
peak collector current
IBM
peak base current TR1
total power dissipation
storage temperature
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
500
UNIT
Rth j-a
thermal resistance from junction to ambient
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Transistor TR1
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−
−
−15
−5
nA
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
−
−
µA
IEBO
hFE
emitter cut-off current
DC current gain
−
−
−100 nA
−
IC = −100 µA; VCE = −5 V
100
100
−
−
IC = −2 mA; VCE = −5 V
−
800
VCEsat
VBEsat
VBE
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA
−75
−300 mV
−
−250 −650 mV
base-emitter saturation
voltage
IC = −10 mA; IB =− 0.5 mA; note 1
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V; note 1
IC = −10 mA; VCE = −5 V; note 2
IE = ie = 0; VCB = −10 V
−
−700
−850
−
−
mV
mV
−
base-emitter voltage
−600 −650 −750 mV
−
−
−820 mV
Cc
fT
collector capacitance
transition frequency
noise figure
−
4.5
−
−
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz
100
−
−
MHz
dB
F
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
−
10
f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS base-emitter forward voltage
IE = 250 mA; VCB = 0
IE = 10 µA; VCB = 0
−
−
−
1.5
V
400
−
mV
hFE
DC current gain
BCV62A
IC = −2 mA; VCE = −5 V
125
220
420
−
−
−
250
475
800
BCV62B
BCV62C
1999 Apr 08
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Transistors TR1 and TR2
current matching of transistors IE2 = 0.5 mA; VCE1 = −5 V; Tamb ≤ 25 °C
0.7
−
−
1.3
1.3
IC1
-------
IE2
TR1 and TR2
IE2 = 0.5 mA; VCE1 = −5 V; Tamb ≤ 150 °C 0.7
IE2
emitter current for thermal
VCE1 = −5 V; note 3 ; (see Fig.2)
−
−
5
mA
stability of −IC1
Notes
1. Decreasing −1.7 mV/°C with increasing temperature.
2. Decreasing −2 mV/°C with increasing temperature.
3. Device, without emitter resistors, mounted on an FR4 printed-circuit board.
handbook, halfpage
handbook, halfpage
A
A
I
C1
I
2
3
1
C1
2
3
1
−V
I
= constant
E2
TR1
TR2
R
CE1
−V
I
= constant
E2
TR1
V
TR2
CO
CE1
4
4
I
E2
A
R
E
E
V
CO
MBK081
MBK080
VCE1 = -5 V; device, without emitter resistors, mounted on an
FR4 printed-circuit board.
2
3
Voltage drop at contacts: VCO < -- U T 16 mV .
^
=
Fig.2 Test circuit current matching.
Fig.3 BCV62 with emitter resistors.
1999 Apr 08
4
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
MBK083
−30
−V
I
CE1max
E2 =
(V)
1 mA
−20
5 mA
10 mA
−10
50 mA
0
10
−1
2
1
10
10
R
(Ω)
E
IC1
= 1.3 (see Fig.3).
-------
IE2
Fig.4 Maximum collector-emitter voltage as a function of emitter resistance.
1999 Apr 08
5
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 Apr 08
6
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV62
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 08
Document order number: 9397 750 05558
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