BCV63-T [NXP]
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal;
| 型号： | BCV63-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3071
BCV63; BCV63B
NPN general purpose double
transistors
Product data sheet
1999 May 21
Supersedes data of 1997 Mar 10
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
BCV63; BCV63B
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
1
DESCRIPTION
• Low voltage (max. 30 and 6 V).
collector TR2 and base TR1
2
collector TR1
APPLICATIONS
3
emitter TR1 and TR2
base TR2
• General purpose switching and amplification
• For use in Schmitt-trigger applications.
4
2
1
handbook, age
4
3
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV64B.
TR1
3
TR2
1
2
MARKING
4
Top view
MAM316
TYPE NUMBER
BCV63
MARKING CODE
D95
D96
Fig.1 Simplified outline (SOT143B) and symbol.
BCV63B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
TR1
−
−
30
V
V
TR2
6
VCEO
collector-emitter voltage
TR1
open base
−
−
−
−
−
−
−
30
V
V
V
TR2
6
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
6
100
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on a printed-circuit board.
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
BCV63; BCV63B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
500
K/W
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 30 V
MIN.
TYP. MAX. UNIT
ICBO
collector cut-off current
−
−
−
15
5
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
μA
hFE
DC current gain
BCV63 TR1
IC = 2 mA; VCE = 5 V
110
110
200
200
−
−
800
800
450
450
300
BCV63 TR2
IC = 2 mA; VCE = 700 mV; note 1
IC = 2 mA; VCE = 5 V
−
BCV63B TR1
BCV63B TR2
−
IC = 2 mA; VCE = 700 mV; note 1
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
75
mV
collector-emitter saturation voltage IC = 100 mA; IB = 5 mA
TR1
TR2
−
−
−
250
250
700
650
−
mV
mV
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 2
IC = 100 mA; IB = 5 mA; note 2
−
base-emitter saturation voltage
TR1
−
−850
−
mV
VBE
base-emitter voltage
TR1
IC = 2 mA; VCE = 5 V; note 3
IC = 10 mA; VCE = 5 V; note 3
IC = 2 mA; VCE = 700 mV; note 3
IE = ie = 0; VCB = 10 V; f = 1 MHz
600
−
650
−
750
820
−
mV
mV
mV
TR1
TR2
−
700
Cc
fT
collector capacitance
TR1
−
4
−
−
pF
transition frequency
TR1
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−
MHz
Notes
1. Group selection will be done on TR1. Due to matched dies, hFE values for TR2 are the same as for TR1.
2. VBEsat decreases by approximately 1.7 mV/K with increasing temperature.
3. VBE decreases by approximately 2 mV/K with increasing temperature.
1999 May 21
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
BCV63; BCV63B
APPLICATION INFORMATION
handbook, halfpage
R
R
c
c
2
1
R1
4
V
o
TR1
3
TR2
3
R2
V
MGD829
i
Fig.2 Schmitt-trigger application.
1999 May 21
4
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
BCV63; BCV63B
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 May 21
5
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
BCV63; BCV63B
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 21
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp7
Date of release: 1999 May 21
Document order number: 9397 750 05849
相关型号：
BCV63-TAPE-13
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV63-TAPE-7
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV63B-TAPE-13
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV63B-TAPE-7
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BCV63BT/R
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
NXP
BCV63T/R
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明