BCY58X [NXP]
NPN switching transistors; NPN开关晶体管型号: | BCY58X |
厂家: | NXP |
描述: | NPN switching transistors |
文件: | 总8页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BCY58; BCY59
NPN switching transistors
1997 Jun 17
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to case
• Switching and amplification.
3
1
DESCRIPTION
handbook, halfpage
1
2
NPN switching transistor in a TO-18 metal package.
PNP complements: BCY78 and BCY79.
2
3
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
collector-base voltage
BCY58
open emitter
open base
−
−
−
−
32
45
V
V
BCY59
VCEO
collector-emitter voltage
BCY58
−
−
−
−
−
−
−
−
−
−
32
45
V
BCY59
V
IC
collector current (DC)
total power dissipation
100
340
1
mA
mW
W
Ptot
T
amb ≤ 45 °C
case ≤ 45 °C
T
hFE
DC current gain
IC = 2 mA; VCE = 5 V
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
transition frequency
turn-off time
120
180
250
380
150
−
170
250
350
500
−
220
310
460
630
−
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
MHz
ns
toff
ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA
480
450
800
800
ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA −
ns
1997 Jun 17
2
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BCY58
−
−
32
V
V
BCY59
45
VCEO
collector-emitter voltage
BCY58
open base
−
−
−
−
−
−
−
−
32
V
V
V
BCY59
45
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
7
100
200
200
340
1
mA
mA
mA
mW
W
ICM
IBM
Ptot
Tamb ≤ 45 °C
case ≤ 45 °C
T
Tstg
Tj
storage temperature
−65
−
+150
200
+150
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
450
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
Rth j-c
150
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
BCY58
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
IE = 0; VCB = 32 V
−
−
−
−
10
10
nA
IE = 0; VCB = 32 V; Tj = 150 °C
µA
ICBO
collector cut-off current
BCY59
IE = 0; VCB = 45 V
−
−
−
−
−
−
10
10
10
nA
µA
nA
IE = 0; VCB = 45 V; Tj = 150 °C
IC = 0; VEB = 5 V
IEBO
hFE
emitter cut-off current
DC current gain
IC = 10 µA; VCE = 5 V
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
−
20
−
−
−
−
20
40
100
95
190
300
1997 Jun 17
3
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
SYMBOL
PARAMETER
DC current gain
CONDITIONS
IC = 2 mA; VCE = 5 V
MIN.
TYP. MAX. UNIT
hFE
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
DC current gain
120
180
250
380
170
250
350
500
220
310
460
630
hFE
IC = 10 mA; VCE = 1 V
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
DC current gain
80
250
300
390
550
−
120
160
240
400
630
1000
hFE
IC = 100 mA; VCE = 1 V
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
40
45
60
60
50
150
600
750
−
−
−
−
−
−
−
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
IC = 100 mA; IB = 2.5 mA
100
250
700
875
−
350
700
850
mV
mV
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.25 mA
IC = 100 mA; IB = 2.5 mA
1200 mV
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
5
pF
−
−
15
−
pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 150
−
MHz
dB
F
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
−
−
10
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels)
ton
td
tr
turn-on time
delay time
rise time
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
−
−
−
−
−
−
−
−
−
−
−
−
85
150
−
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
50
−
toff
ts
turn-off time
storage time
fall time
480
400
80
800
−
tf
−
ton
td
tr
turn-on time
delay time
rise time
ICon = 100 mA; IBon = 10 mA;
IBoff = −10 mA
55
150
−
5
50
−
toff
ts
turn-off time
storage time
fall time
450
250
200
800
−
tf
−
1997 Jun 17
4
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
α
j
B
w
M
M
M
B
A
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D
j
k
L
w
α
1
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
mm
0.40
2.54
45°
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
B11/C7 type 3
JEDEC
EIAJ
SOT18/13
TO-18
97-04-18
1997 Jun 17
5
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 17
6
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
NOTES
1997 Jun 17
7
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SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jun 17
Document order number: 9397 750 02162
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