BDX45 [NXP]
PNP Darlington transistors; PNP达林顿晶体管
| 型号： | BDX45 |
| 厂家： | 
NXP |
| 描述： | PNP Darlington transistors |
| 文件： | 总8页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BDX45; BDX47
PNP Darlington transistors
Product specification
1997 Jul 02
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
FEATURES
PINNING
PIN
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
3
base
APPLICATIONS
• Industrial switching applications such as:
– print hammers
handbook, halfpage
– solenoids
2
– relay and lamp drivers.
3
DESCRIPTION
PNP Darlington transistor in a TO-126; SOT32 plastic
package. NPN complements: BDX42 and BDX44.
1
1
2
3
Top view
MAM350
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
BDX45
open emitter
VBE = 0
−
−
−
−
−60
−90
V
BDX47
V
VCES
collector-emitter voltage
BDX45
−
−
−
−
−
−
−
−
−
−
−
−
−45
−80
−1
1.25
5
V
BDX47
V
IC
collector current (DC)
total power dissipation
A
Ptot
T
amb ≤ 25 °C
mb ≤ 100 °C
W
W
T
hFE
DC current gain
IC = −150 mA; VCE = −10 V
1000
2000
−
−
IC = −500 mA; VCE = −10 V
−
fT
transition frequency
IC = −500 mA; VCE = −5 V; f = 100 MHz
200
−
MHz
1997 Jul 02
2
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BDX45
−
−
−60
V
V
BDX47
−90
VCES
collector-emitter voltage
BDX45
VBE = 0
−
−
−
−
−
−
−
−
−45
−80
−5
V
V
V
A
A
BDX47
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
open collector
−1
−2
−100
1.25
5
mA
W
Ptot
Tamb ≤ 25 °C
mb ≤ 100 °C
T
W
Tstg
Tj
storage temperature
−65
−
+150
150
+150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
in free air
VALUE
100
UNIT
K/W
K/W
thermal resistance from junction to ambient
Rth j-mb
thermal resistance from junction to mounting base
10
1997 Jul 02
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
BDX45
IE = 0; VCB = −60 V
IE = 0; VCB = −90 V
−
−
−
−
−100 nA
−100 nA
BDX47
ICES
collector cut-off current
BDX45
V
BE = 0; VCE = −45 V
BE = 0; VCE = −80 V
−
−
−
−
−
−
−50
−50
−50
nA
nA
nA
BDX47
V
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = −4 V
VCE = −10 V; see Fig. 2
IC = −150 mA
1000
−
−
IC = −500 mA
2000
−
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −0.5 mA
IC = −500 mA; IB = −0.5 mA; Tj = 150 °C
IC = −1 A; IB = −4 mA
−
−
−
−
−
−
−
−
−1.3
−1.3
−1.6
−1.6
−1.9
−2.2
−
V
−
V
−
V
IC = −1 A; IB = −4 mA; Tj = 150 °C
−
V
VBEsat
base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA
IC = −1 A; IB = −4 mA
−
V
−
V
fT
transition frequency
IC = −500 mA; VCE = −5 V; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
td
tr
turn-on time
delay time
rise time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
−
−
−
−
−
−
−
−
−
−
−
500
200
300
700
550
150
ns
ns
ns
ns
ns
ns
toff
ts
turn-off time
storage time
fall time
tf
1997 Jul 02
4
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
MGD839
6000
h
FE
5000
4000
3000
2000
1000
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
VCE = −10 V.
Fig.2 DC current gain; typical values.
V
B
V
C
BB
CC
a
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MGD624
Vi = −10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = −10.7 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
5
1997 Jul 02
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P
1
P
D
L
1
L
1
2
3
e
b
w
M
c
1
p
e
Q
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
b
c
D
E
e
e
L
Q
P
P
w
A
p
1
1
max
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
16.5
15.3
1.5
0.9
3.2
3.0
3.9
3.6
mm
2.54
4.58
2.29
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-03-04
SOT32
TO-126
1997 Jul 02
6
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 02
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 02
Document order number: 9397 750 02574
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