BF245B [NXP]
N-channel silicon field-effect transistors; N-沟道硅音响场效晶体管
| 型号： | BF245B |
| 厂家： | 
NXP |
| 描述： | N-channel silicon field-effect transistors |
| 文件： | 总11页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF245A; BF245B; BF245C
N-channel silicon field-effect
transistors
Product specification
1996 Jul 30
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
FEATURES
PINNING
• Interchangeability of drain and source connections
• Frequencies up to 700 MHz.
PIN
SYMBOL
DESCRIPTION
1
2
3
d
s
g
drain
source
gate
APPLICATIONS
• LF, HF and DC amplifiers.
DESCRIPTION
1
handbook, halfpage
2
3
General purpose N-channel symmetrical junction
d
s
field-effect transistors in a plastic TO-92 variant package.
g
MAM257
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (TO-92 variant)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
±30
UNIT
drain-source voltage
gate-source cut-off voltage
gate-source voltage
drain current
−
−
−
−
V
VGSoff
VGSO
IDSS
ID = 10 nA; VDS = 15 V
open drain
−0.25
−8
V
V
−
−30
VDS = 15 V; VGS = 0
BF245A
2
−
−
−
−
−
6.5
15
mA
mA
mA
mW
mS
BF245B
6
BF245C
12
−
25
Ptot
yfs
total power dissipation
forward transfer admittance
Tamb = 75 °C
300
6.5
VDS = 15 V; VGS = 0;
3
f = 1 kHz; Tamb = 25 °C
Crs
reverse transfer capacitance
VDS = 20 V; VGS = −1 V;
f = 1 MHz; Tamb = 25 °C
−
1.1
−
pF
1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±30
UNIT
−
−
−
−
−
−
−
V
V
V
VGDO
VGSO
ID
gate-drain voltage
gate-source voltage
drain current
open source
−30
−30
25
open drain
mA
mA
mW
mW
°C
IG
gate current
10
Ptot
total power dissipation
up to Tamb = 75 °C;
300
300
+150
150
up to Tamb = 90 °C; note 1
Tstg
Tj
storage temperature
−65
operating junction temperature
−
°C
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm × 10 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
250
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
thermal resistance from junction to ambient
200
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IG = −1 µA; VDS = 0
MIN.
−30
MAX.
UNIT
V(BR)GSS
VGSoff
VGS
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF245A
−
V
V
ID = 10 nA; VDS = 15 V
−0.25
−8.0
ID = 200 µA; VDS = 15 V
−0.4
−1.6
−3.2
−2.2
−3.8
−7.5
V
V
V
BF245B
BF245C
IDSS
drain current
VDS = 15 V; VGS = 0; note 1
BF245A
2
6.5
15
mA
mA
mA
nA
BF245B
6
BF245C
12
−
25
IGSS
gate cut-off current
VGS = −20 V; VDS = 0
−5
VGS = −20 V; VDS = 0; Tj = 125 °C
−
−0.5
µA
Note
1. Measured under pulse conditions: tp = 300 µs; δ ≤ 0.02.
1996 Jul 30
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; unless otherwise specified.
SYMBOL
Cis
PARAMETER
input capacitance
reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz
CONDITIONS
MIN. TYP. MAX. UNIT
VDS = 20 V; VGS = −1 V; f = 1 MHz
−
−
−
−
−
3
−
−
−
−
4
−
pF
Crs
Cos
gis
1.1
1.6
250
40
−
−
pF
output capacitance
input conductance
output conductance
VDS = 20 V; VGS = −1 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
−
pF
−
µS
gos
yfs
−
µS
forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz
VDS = 15 V; VGS = 0; f = 200 MHz
6.5
−
mS
mS
mS
µS
6
yrs
yos
fgfs
reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz
1.4
25
700
−
output admittance
cut-off frequency
VDS = 15 V; VGS = 0; f = 1 kHz
−
VDS = 15 V; VGS = 0; gfs = 0.7 of its
value at 1 kHz
−
MHz
F
noise figure
VDS = 15 V; VGS = 0; f = 100 MHz;
RG = 1 kΩ (common source);
input tuned to minimum noise
−
1.5
−
dB
MGE785
MGE789
6
−10
handbook, halfpage
handbook, halfpage
I
D
I
GSS
(mA)
5
(nA)
−1
4
3
2
1
0
typ
−1
−10
−2
−10
−3
−10
0
50
100
150
−4
−2
0
V
(V)
GS
T (°C)
j
VDS = 0; VGS = −20 V.
VDS = 15 V; Tj = 25 °C.
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
Fig.3 Transfer characteristics for BF245A;
typical values.
1996 Jul 30
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MBH555
MGE787
6
15
handbook, halfpage
handbook, halfpage
I
D
(mA)
5
I
D
(mA)
V
= 0 V
GS
4
3
2
1
0
10
−0.5 V
5
−1 V
−1.5 V
0
−4
0
10
20
−2
0
V
(V)
V
(V)
DS
GS
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.4 OutputcharacteristicsforBF245A;
typical values.
Fig.5 Transfer characteristics for BF245B;
typical values.
MBH553
MGE788
15
30
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
10
20
−0.5 V
−1 V
5
0
10
−1.5 V
−2 V
−2.5 V
0
−10
0
10
20
−5
0
V
(V)
V
(V)
GS
DS
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.6 Output characteristics for BF245B;
typical values.
Fig.7 Transfer characteristics for BF245C;
typical values.
1996 Jul 30
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MBH554
MGE775
30
4
handbook, halfpage
handbook, halfpage
I
D
I
D
(mA)
(mA)
3
V
= 0 V
GS
20
V
= 0 V
GS
−0.5 V
2
1
−1 V
−2 V
10
−1 V
−3 V
−4 V
−1.5 V
0
0
0
0
10
20
50
100
150
V
(V)
DS
T (°C)
j
VDS = 15 V; Tj = 25 °C.
VDS = 15 V.
Fig.8 Output characteristics for BF245C;
typical values.
Fig.9 Drain current as a function of junction
temperature; typical values for BF245A.
MGE776
MGE779
20
15
handbook, halfpage
handbook, halfpage
I
D
I
(mA)
D
(mA)
16
10
V
= 0 V
GS
12
8
V
= 0 V
GS
5
0
−2 V
−4 V
−1 V
−2 V
4
0
0
50
100
150
0
50
100
150
T (°C)
T (°C)
j
j
VDS = 15 V.
VDS = 15 V.
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
1996 Jul 30
6
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE780
MGE778
3
2
4
10
10
10
10
handbook, halfpage
handbook, halfpage
g
b
b
C
is
is
rs
rs
(µA/V)
(mA/V)
(µA/V)
(pF)
g
b
is
C
rs
2
3
10
10
10
1
is
b
rs
2
−1
10
1
10
10
−2
−1
10
3
1
10
10
10
2
3
2
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.13 Common source reverse admittance as a
function of frequency; typical values.
Fig.12 Input admittance; typical values.
MGE783
MGE782
3
10
10
10
handbook, halfpage
handbook, halfpage
g
,
fs
−b
fs
g
b
os
os
(mA/V)
(mA/V)
(µA/V)
8
6
4
b
g
os
2
10
1
g
fs
os
−1
−2
10
10
2
0
−b
fs
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.14 Common-source forward transfer admittance
as a function of frequency; typical values.
Fig.15 Common-source output admittance as a
function of frequency; typical values.
1996 Jul 30
7
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE777
MGE781
6
1.5
handbook, halfpage
handbook, halfpage
C
is
(pF)
C
rs
(pF)
4
typ
typ
1
2
0
0.5
0
−2
−4
−6
−8
V
−10
(V)
0
−2
−4
−6
−8
V
−10
(V)
GS
GS
VDS = 20 V; f = 1 MHz; Tamb = 25 °C.
VDS = 20 V; f = 1 MHz; Tamb = 25 °C.
Fig.16 Input capacitance as a function of
gate-source voltage; typical values.
Fig.17 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
MGE791
MGE784
8
−10
handbook, halfpage
handbook, halfpage
V
GSoff
|y
|
fs
at I = 10 nA
D
(mA/V)
(V)
BF245C
−8
BF245B
6
BF245A
−6
−4
4
2
0
BF245C
−2
BF245B
BF245A
−0
20
0
5
10
15
0
10
20
30
I
(mA)
D
I
at V
= 0 (mA)
GS
DSS
VDS = 15 V; f = 1 kHz; Tamb = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.18 Forward transfer admittance as a function of
drain current; typical values.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
1996 Jul 30
8
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE790
MGE786
3
3
10
handbook, halfpage
handbook, halfpage
R
DSon
F
(dB)
(kΩ)
2
10
2
1
typ
10
BF245A
1
BF245B
BF245C
−1
0
1
10
2
3
10
10
10
0
−1
−2
−3
−4
f (MHz)
V
(V)
GS
VDS = 0; f = 1 kHz; Tamb = 25 °C.
VDS = 15 V; VGS = 0; RG = 1 kΩ; Tamb = 25 °C.
Input tuned to minimum noise.
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
Fig.21 Noise figure as a function of frequency;
typical values.
1996 Jul 30
9
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
PACKAGE OUTLINE
0.40
min
4.2 max
1.7
1.4
5.2 max
12.7 min
0.48
0.40
1
2
4.8
max
2.54
3
0.66
0.56
(1)
MBC015 - 1
2.5 max
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.22 TO-92 variant.
1996 Jul 30
10
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 30
11
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