BF245C,112 [NXP]
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| 型号： | BF245C,112 |
| 厂家： | 
NXP |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF245A; BF245B; BF245C
N-channel silicon field-effect
transistors
Product specification
1996 Jul 30
Supersedes data of April 1995
NXP Semiconductors
Product specification
BF245A; BF245B;
BF245C
N-channel silicon field-effect transistors
FEATURES
PINNING
Interchangeability of drain and source connections
Frequencies up to 700 MHz.
PIN
1
SYMBOL
DESCRIPTION
d
s
g
drain
source
gate
2
APPLICATIONS
3
LF, HF and DC amplifiers.
DESCRIPTION
1
handbook, halfpage
2
General purpose N-channel symmetrical junction
3
d
field-effect transistors in a plastic TO-92 variant package.
g
s
MAM257
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (TO-92 variant)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
30
UNIT
drain-source voltage
gate-source cut-off voltage
gate-source voltage
drain current
V
VGSoff
VGSO
IDSS
ID = 10 nA; VDS = 15 V
open drain
0.25
8
V
V
30
VDS = 15 V; VGS = 0
BF245A
2
6.5
15
mA
mA
mA
mW
mS
BF245B
6
BF245C
12
25
Ptot
total power dissipation
forward transfer admittance
Tamb = 75 C
300
6.5
yfs
VDS = 15 V; VGS = 0;
3
f = 1 kHz; Tamb = 25 C
Crs
reverse transfer capacitance
VDS = 20 V; VGS = 1 V;
f = 1 MHz; Tamb = 25 C
1.1
pF
1996 Jul 30
2
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
30
UNIT
V
V
V
VGDO
VGSO
ID
gate-drain voltage
gate-source voltage
drain current
open source
30
30
25
open drain
mA
mA
mW
mW
C
IG
gate current
10
Ptot
total power dissipation
up to Tamb = 75 C;
300
300
+150
150
up to Tamb = 90 C; note 1
Tstg
Tj
storage temperature
65
operating junction temperature
C
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
thermal resistance from junction to ambient
250
200
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
IG = 1 A; VDS = 0
MIN.
30
MAX.
UNIT
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
BF245A
V
V
ID = 10 nA; VDS = 15 V
0.25
8.0
VGS
ID = 200 A; VDS = 15 V
0.4
1.6
3.2
2.2
3.8
7.5
V
V
V
BF245B
BF245C
IDSS
drain current
VDS = 15 V; VGS = 0; note 1
BF245A
2
6.5
15
mA
mA
mA
nA
BF245B
6
BF245C
12
25
IGSS
gate cut-off current
VGS = 20 V; VDS = 0
5
V
GS = 20 V; VDS = 0; Tj = 125 C
0.5
A
Note
1. Measured under pulse conditions: tp = 300 s; 0.02.
1996 Jul 30
3
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; unless otherwise specified.
SYMBOL
Cis
PARAMETER
input capacitance
reverse transfer capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz
CONDITIONS
MIN. TYP. MAX. UNIT
VDS = 20 V; VGS = 1 V; f = 1 MHz
3
4
pF
Crs
Cos
gis
1.1
1.6
250
40
pF
output capacitance
VDS = 20 V; VGS = 1 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
pF
input conductance
S
gos
yfs
output conductance
forward transfer admittance
S
6.5
mS
mS
mS
S
6
yrs
yos
fgfs
reverse transfer admittance
output admittance
1.4
25
700
cut-off frequency
VDS = 15 V; VGS = 0; gfs = 0.7 of its
value at 1 kHz
MHz
F
noise figure
VDS = 15 V; VGS = 0; f = 100 MHz;
1.5
dB
RG = 1 k (common source);
input tuned to minimum noise
MGE785
MGE789
6
−10
handbook, halfpage
handbook, halfpage
I
D
I
GSS
(mA)
5
(nA)
−1
4
3
2
1
0
typ
−1
−10
−2
−10
−3
−10
0
50
100
150
−4
−2
0
V
(V)
GS
T (°C)
j
VDS = 0; VGS = 20 V.
VDS = 15 V; Tj = 25 C.
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
Fig.3 Transfer characteristics for BF245A;
typical values.
1996 Jul 30
4
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MBH555
MGE787
6
15
handbook, halfpage
handbook, halfpage
I
D
(mA)
5
I
D
(mA)
V
= 0 V
GS
4
3
2
1
0
10
−0.5 V
5
−1 V
−1.5 V
0
−4
0
10
20
−2
0
V
(V)
V
(V)
DS
GS
VDS = 15 V; Tj = 25 C.
VDS = 15 V; Tj = 25 C.
Fig.4 OutputcharacteristicsforBF245A;
typical values.
Fig.5 Transfer characteristics for BF245B;
typical values.
MBH553
MGE788
15
30
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
10
20
−0.5 V
−1 V
5
0
10
−1.5 V
−2 V
−2.5 V
0
−10
0
10
20
−5
0
V
(V)
V
(V)
GS
DS
VDS = 15 V; Tj = 25 C.
VDS = 15 V; Tj = 25 C.
Fig.6 Output characteristics for BF245B;
typical values.
Fig.7 Transfer characteristics for BF245C;
typical values.
1996 Jul 30
5
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MBH554
MGE775
30
4
handbook, halfpage
handbook, halfpage
I
D
I
D
(mA)
(mA)
3
V
= 0 V
GS
20
V
= 0 V
GS
−0.5 V
2
1
−1 V
−2 V
10
−1 V
−3 V
−4 V
−1.5 V
0
0
0
0
10
20
50
100
150
V
(V)
DS
T (°C)
j
VDS = 15 V; Tj = 25 C.
VDS = 15 V.
Fig.8 Output characteristics for BF245C;
typical values.
Fig.9 Drain current as a function of junction
temperature; typical values for BF245A.
MGE776
MGE779
20
15
handbook, halfpage
handbook, halfpage
I
D
I
(mA)
D
(mA)
16
10
V
= 0 V
GS
12
8
V
= 0 V
GS
5
0
−2 V
−4 V
−1 V
−2 V
4
0
0
50
100
150
0
50
100
150
T (°C)
T (°C)
j
j
VDS = 15 V.
VDS = 15 V.
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
1996 Jul 30
6
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE780
MGE778
3
2
4
10
10
10
10
handbook, halfpage
handbook, halfpage
g
b
b
C
is
is
rs
rs
(μA/V)
(mA/V)
(μA/V)
(pF)
g
b
is
C
rs
2
3
10
10
10
1
is
b
rs
2
−1
10
1
10
10
−2
−1
10
3
1
10
10
10
2
3
2
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 C.
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.13 Common source reverse admittance as a
function of frequency; typical values.
Fig.12 Input admittance; typical values.
MGE783
MGE782
3
10
10
10
handbook, halfpage
handbook, halfpage
g
,
fs
−b
(mA/V)
fs
g
b
os
os
(mA/V)
(μA/V)
8
6
4
b
g
os
2
10
1
g
fs
os
−1
−2
10
10
2
0
−b
fs
1
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 C.
VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.14 Common-source forward transfer admittance
as a function of frequency; typical values.
Fig.15 Common-source output admittance as a
function of frequency; typical values.
1996 Jul 30
7
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE777
MGE781
6
1.5
handbook, halfpage
handbook, halfpage
C
is
(pF)
C
rs
(pF)
4
typ
typ
1
2
0
0.5
0
−2
−4
−6
−8
V
−10
(V)
0
−2
−4
−6
−8
V
−10
(V)
GS
GS
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
VDS = 20 V; f = 1 MHz; Tamb = 25 C.
Fig.16 Input capacitance as a function of
gate-source voltage; typical values.
Fig.17 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
MGE791
MGE784
8
−10
handbook, halfpage
handbook, halfpage
V
GSoff
|y
|
fs
at I = 10 nA
D
(mA/V)
(V)
BF245C
−8
BF245B
6
BF245A
−6
−4
4
2
0
BF245C
−2
BF245B
BF245A
−0
20
0
5
10
15
0
10
20
30
I
(mA)
D
I
at V
= 0 (mA)
GS
DSS
VDS = 15 V; f = 1 kHz; Tamb = 25 C.
VDS = 15 V; Tj = 25 C.
Fig.18 Forward transfer admittance as a function of
drain current; typical values.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
1996 Jul 30
8
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
MGE790
MGE786
3
3
10
handbook, halfpage
handbook, halfpage
R
DSon
F
(dB)
(kΩ)
2
10
2
1
typ
10
BF245A
1
BF245B
BF245C
−1
0
1
10
2
3
10
10
10
0
−1
−2
−3
−4
f (MHz)
V
(V)
GS
VDS = 0; f = 1 kHz; Tamb = 25 C.
VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.
Input tuned to minimum noise.
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
Fig.21 Noise figure as a function of frequency;
typical values.
1996 Jul 30
9
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
e
1
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-06-28
05-01-10
SOT54 variant
1996 Jul 30
10
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1996 Jul 30
11
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1996 Jul 30
12
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp13
Date of release:1996 Jul 30
相关型号：
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BF245C/D11Z(L34Z)
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