BF494-AMMO [NXP]
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| 型号： | BF494-AMMO |
| 厂家： | 
NXP |
| 描述： | 暂无描述 晶体 小信号双极晶体管 PC |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BF494; BF495
NPN medium frequency transistors
1997 Jul 08
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
FEATURES
PINNING
PIN
• Low current (max. 30 mA)
• Low voltage (max. 20 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• HF applications in radio and television receivers
• FM tuners
• Low noise AM mixer-oscillators
• IF amplifiers in AM/FM receivers.
1
handbook, halfpage
3
2
3
1
DESCRIPTION
2
MAM258
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
ICM
PARAMETER
CONDITIONS
MIN.
MAX.
30
UNIT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
BF494
open emitter
open base
−
−
−
−
V
V
20
30
mA
Ptot
Tamb ≤ 25 °C
300
mW
hFE
IC = 1 mA; VCE = 10 V
67
35
220
125
−
BF495
fT
transition frequency
IC = 1 mA; VCE = 10 V; f = 100 MHz
120
MHz
1997 Jul 08
2
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
30
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
open base
20
open collector
5
collector current (DC)
peak collector current
total power dissipation
storage temperature
30
mA
mA
mW
°C
ICM
30
Ptot
Tamb ≤ 25 °C; note 1
300
+150
150
+150
Tstg
Tj
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
420
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 20 V
MIN.
MAX.
UNIT
ICBO
collector cut-off current
−
−
−
100
4
nA
µA
nA
IE = 0; VCB = 20 V; Tamb = 150 °C
IC = 0; VEB = 4 V
IEBO
hFE
emitter cut-off current
DC current gain
BF494
100
IC = 1 mA; VCE = 10 V
67
220
220
125
125
740
1
BF494B
100
35
BF495
BF495B
100
650
−
VBE
Cre
fT
base-emitter voltage
feedback capacitance
transition frequency
IC = 1 mA; VCE = 10 V
mV
pF
IC = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
120
−
MHz
1997 Jul 08
3
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
1997 Jul 08
4
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 08
5
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
NOTES
1997 Jul 08
6
Philips Semiconductors
Product specification
NPN medium frequency transistors
BF494; BF495
NOTES
1997 Jul 08
7
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 08
Document order number: 9397 750 02606
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