BF512-T [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal;
| 型号： | BF512-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
December 1997
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DESCRIPTION
MARKING CODE
Asymmetrical N-channel planar
epitaxial junction field-effect
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
3
handbook, halfpage
d
s
g
PINNING - SOT23
1
2
1
2
3
= gate
Top view
MAM385
= drain
= source
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage
VDS
ID
max.
max.
20
30
V
Drain current (DC or average)
Total power dissipation
up to Tamb = 40 °C
mA
Ptot
IDSS
yfs
max.
250
mW
BF510
0.7
511
512
6
513
Drain current
>
<
2.5
7.0
10 mA
18 mA
VDS = 10 V; VGS = 0
3.0
12
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
>
2.5
4
6
7 mS
Feedback capacitance
V
DS = 10 V; VGS = 0
Crs
Crs
typ.
typ.
0.3
0.3
−
− pF
VDS = 10 V; ID = 5 mA
−
−
0.3
0.3 pF
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
F
F
typ.
typ.
1.5
1.5
−
− dB
V
DS = 10 V; ID = 5 mA
−
−
1.5
1.5 dB
December 1997
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
VDGO
ID
max.
20 V
20 V
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
max.
max.
max.
max.
30 mA
10 mA
250 mW
± IG
Ptot
Tstg
Tj
Total power dissipation up to Tamb = 40 °C (note 1)
Storage temperature range
Junction temperature
−65 to + 150 °C
max.
150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
Rth j-a
=
430 K/W
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
Tamb = 25 °C
BF510
511
512
513
Gate cut-off current
−VGS = 0.2 V; VDS = 0
Gate-drain breakdown voltage
IS = 0; −ID = 10 µA
−IGSS
<
>
10
20
10
20
10
20
10 nA
20 V
−V(BR)GDO
Drain current
>
<
0.7
3.0
2.5
7.0
6
12
10 mA
18 mA
VDS = 10 V; VGS = 0
IDSS
Gate-source cut-off voltage
ID = 10 µA; VDS = 10 V
−V(P)GS
typ.
0.8
1.5
2.2
3 V
December 1997
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
VDS = 10 V; VGS = 0; Tamb = 25 °C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 °C for BF512 and BF513
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
BF510
5
511
5
512
5
513
5 pF
Cis
gis
<
typ.
typ.
<
100
0.4
0.5
2.5
−
90
0.4
0.5
4.0
−
60
50 µS
0.4 pF
0.5 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
0.4
0.5
4.0
6.0
5.0
3
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
Crs
yfs
>
VGS = 0 instead of ID = 5 mA
yfs
yfs
>
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
typ.
<
3.5
3
5.5
3
Cos
gos
gos
<
60
80
55
100
70
120 µS
90 µS
typ.
35
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS;
f = 100 MHz
F
typ.
1.5
1.5
1.5
1.5 dB
MDA275
MDA276
1.5
10
handbook, halfpage
handbook, halfpage
|y
|
fs
BF513
C
rs
(mS)
(pF)
8
BF512
BF511
1
6
4
2
0
BF510
0.5
typ
0
0
4
8
12
16
V
20
(V)
0
5
10
15
I
(mA)
D
DS
Fig.2 VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 °C.
Fig.3 VDS = 10 V; f = 1 kHz; Tamb = 25 °C; typical
values.
December 1997
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
MDA245
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40
80
120
160
T
200
(°C)
amb
Fig.4 Power derating curve.
December 1997
5
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
December 1997
6
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
7
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