BF545A-T [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal;型号: | BF545A-T |
厂家: | NXP |
描述: | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal 开关 光电二极管 晶体管 |
文件: | 总16页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BF545A; BF545B; BF545C
T23
SO
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
1.3 Applications
Impedance converters in e.g. electret microphones and infra-red detectors
VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
-
Typ
Max
30
Unit
V
VDS
drain-source voltage
-
-
VGSoff
gate-source cut-off
voltage
ID = 1 A; VDS = 15 V
0.4
7.8
V
IDSS
drain current
VGS = 0 V; VDS = 15 V
BF545A
2
-
-
-
-
-
6.5
15
mA
mA
mA
mW
mS
BF545B
6
BF545C
12
-
25
Ptot
total power dissipation Tamb 25 C
250
6.5
yfs
forward transfer
admittance
VGS = 0 V; VDS = 15 V
3
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
2. Pinning information
Table 2.
Pinning
Pin
1
Description
source (s)
drain (d)
Simplified outline
Symbol
3
d
s
2
g
sym054
3
gate (g)
1
2
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BF545A
BF545B
BF545C
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
BF545A
Marking code[1]
20*
21*
22*
BF545B
BF545C
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
2 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGSO
VGDO
IG
Parameter
Conditions
Min
Max
30
30
30
10
Unit
V
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
-
open drain
-
V
open source
-
V
-
mA
mW
C
C
[1]
Ptot
Tamb 25 C
-
250
+150
150
Tstg
65
Tj
-
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
mbb688
400
P
tot
(mW)
300
200
100
0
0
50
100
150
200
(°C)
T
amb
Fig 1. Power derating curve.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
[1]
Rth(j-a)
thermal resistance from junction to
ambient
500
K/W
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
3 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 V
30
-
-
V
VGSoff
gate-source cut-off voltage
ID = 200 A; VDS = 15 V
BF545A
0.4
1.6
3.2
0.4
-
-
-
-
2.2
3.8
7.8
7.5
V
V
V
V
BF545B
BF545C
ID = 1 A; VDS = 15 V
VGS = 0 V; VDS = 15 V
BF545A
IDSS
drain current
2
6
12
-
-
6.5
15
25
mA
mA
mA
BF545B
-
BF545C
-
IGSS
gate-source leakage current
forward transfer admittance
VGS = 20 V; VDS = 0 V
0.5
1000 pA
VGS = 20 V; VDS = 0 V;
Tj = 125 C
-
-
100
nA
yfs
VGS = 0 V; VDS = 15 V
VGS = 0 V; VDS = 15 V
3
-
-
6.5
-
mS
yos
common source output
admittance
40
S
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
4 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Ciss
Crss
gis
input capacitance
VDS = 15 V; f = 1 MHz
VGS = 10 V
-
-
1.7
3
-
-
pF
pF
VGS = 0 V
reverse transfer capacitance
VDS = 15 V; f = 1 MHz
VGS = 10 V
-
-
0.8
0.9
-
-
pF
pF
VGS = 0 V
common source input
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
15
-
-
S
S
f = 450 MHz
300
gfs
common source transfer
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
2
-
-
mS
mS
f = 450 MHz
1.8
grs
common source reverse
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
6
-
-
S
S
f = 450 MHz
40
gos
common source output
conductance
VDS = 10 V; ID = 1 mA
f = 100 MHz
-
-
30
60
-
-
S
S
f = 450 MHz
mbb467
mbb466
30
6
Y
fs
I
DSS
(mS)
(mA)
5.5
5
20
10
4.5
4
0
0
−2
−4
−6
−8
0
−2
−4
−6
−8
V
(V)
V
(V)
GSoff
GSoff
VDS = 15 V; Tj = 25 C.
VDS = 15 V; VGS = 0 V; Tj = 25 C.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values.
Fig 3. Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
5 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb465
mbb464
80
300
Y
os
R
DSon
(μS)
(Ω)
60
200
100
0
40
20
0
0
−2
−4
−6
−8
0
−2
−4
−6
−8
V
(V)
V
(V)
GSoff
GSoff
VDS = 15 V; VGS = 0 V; Tj = 25 C.
VDS = 100 mV; VGS = 0 V; Tj = 25 C.
Fig 4. Common-source output admittance as a
function of gate-source cut-off voltage; typical
values.
Fig 5. Drain-source on-resistance as a function of
gate-source cut-off voltage; typical values.
mbb462
mbb463
6
6
I
I
D
D
(mA)
(mA)
(1)
4
2
0
4
2
0
(2)
(3)
0
4
8
12
16
−3
−2
−1
0
V
(V)
V
(V)
GS
DS
BF545A
BF545A
VDS = 15 V; Tj = 25 C.
Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.5 V.
(3) GS = 1.0 V.
V
Fig 6. Typical output characteristics.
Fig 7. Typical input characteristics.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
6 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb460
mbb459
16
16
I
I
D
D
(mA)
(mA)
(1)
12
12
(2)
(3)
8
4
0
8
4
0
(4)
(5)
(6)
0
4
8
12
16
−6
−4
−2
0
V
(V)
V
(V)
GS
DS
BF545B
BF545B
Tj = 25 C.
V
DS = 15 V; Tj = 25 C.
(1) VGS = 0 V.
(2) VGS = 0.5 V.
(3) GS = 1.0 V.
V
(4) VGS = 1.5 V.
(5) VGS = 2.0 V.
(6)
VGS = 2.5 V.
Fig 8. Typical output characteristics.
Fig 9. Typical input characteristics.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
7 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb457
mbb456
30
30
I
I
D
D
(mA)
(mA)
(1)
(2)
20
20
(3)
(4)
10
10
(5)
(6)
0
0
0
4
8
12
16
−8
−6
−4
−2
0
V
(V)
V
(V)
GS
DS
BF545C
BF545C
VDS = 15 V; Tj = 25 C.
Tj = 25 C.
(1) VGS = 0 V.
(2) GS = 1.0 V.
V
(3) VGS = 2.0 V.
(4) VGS = 3.0 V.
(5)
VGS = 4.0 V.
(6) VGS = 5.0 V.
Fig 10. Typical output characteristics.
Fig 11. Typical input characteristics.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
8 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb461
mbb458
3
3
10
10
I
I
D
D
(μA)
10
(μA)
10
2
2
10
10
1
1
−1
−1
10
10
−2
−2
10
10
10
10
−3
−3
−3
−2
−1
0
−6
−4
−2
0
V
(V)
V
(V)
GS
GS
BF545A
BF545B
VDS = 15 V; Tj = 25 C.
V
DS = 15 V; Tj = 25 C.
Fig 12. Drain current as a function of gate-source
voltage; typical values.
Fig 13. Drain current as a function of gate-source
voltage; typical values.
mbb455
mbb454
3
2
10
−10
I
D
I
G
(μA)
2
(pA)
10
(1)
−10
10
1
−1
−1
(2)
(3)
(4)
−1
10
−10
−2
10
10
−3
−2
−10
−8
−6
−4
−2
0
0
4
8
12
16
V
20
(V)
V
(V)
GS
DG
BF545C
VDS = 15 V; Tj = 25 C.
I
D = 10 mA only for BF545B and BF545C; Tj = 25 C.
(1) ID = 10 mA.
(2) D = 1 mA.
(3) ID = 0.1 mA.
(4) IGSS
I
.
Fig 14. Drain current as a function of gate-source
voltage; typical values.
Fig 15. Gate current as a function of drain-gate
voltage; typical values.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
9 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb453
mbb452
3
−10
1
C
rss
I
GSS
(pF)
0.8
(pA)
2
−10
0.6
0.4
0.2
0
−10
−1
−1
10
−50
0
50
100
150
−10
−8
−6
−4
−2
0
T (°C)
j
V
GS
(V)
VDS = 0 V; VGS = 20 V.
VDS = 15 V; Tj = 25 C.
Fig 16. Gate current as a function of junction
temperature; typical values.
Fig 17. Reverse transfer capacitance as a function of
gate-source voltage; typical values.
mbb451
mbb468
2
3
10
y
is
C
iss
(mS)
(pF)
10
2
1
0
(1)
(2)
1
−1
10
−2
10
2
3
−10
−8
−6
−4
−2
0
10
10
10
V
GS
(V)
f (MHz)
VDS = 15 V; Tj = 25 C.
VDS = 10 V; ID = 1 mA; Tamb = 25 C.
(1) bis.
(2) gis.
Fig 18. Typical input capacitance.
Fig 19. Common-source input admittance; typical
values.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
10 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
mbb469
mbb470
2
10
10
y
rs
Y
fs
(mS)
(mS)
(1)
1
10
−1
10
10
10
(1)
(2)
(2)
1
−2
−1
−3
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 C.
V
DS = 10 V; ID = 1 mA; Tamb = 25 C.
(1) gfs.
(1) brs.
(2) grs.
(2) bfs.
Fig 20. Common-source forward transfer admittance;
typical values.
Fig 21. Common-source reverse transfer admittance;
typical values.
mbb471
10
y
os
(mS)
(1)
1
−1
10
10
(2)
−2
2
3
10
10
10
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 C.
(1) bos
(2) gos
.
.
Fig 22. Common-source output admittance; typical values.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
11 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 23. Package outline.
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
12 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
10. Revision history
Table 9.
Document ID
BF545A_BF545B_BF545C v.4 20110915
Revision history
Release date
Data sheet status
Product data sheet
Change notice Supersedes
BF545A_BF545B_BF545C v.3
-
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline drawings have been updated to the latest version.
BF545A_BF545B_BF545C v.3 20040805
(9397 750 13391)
Product data sheet
-
BF545A-B-C v.2
BF545A-B-C v.2
19960729
Product specification
-
-
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
13 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
11.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
14 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
15 of 16
BF545A; BF545B; BF545C
NXP Semiconductors
N-channel silicon junction field-effect transistors)
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 September 2011
Document identifier: BF545A_BF545B_BF545C
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