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BF556B,215 [NXP]

N-channel FET TO-236 3-Pin;
BF556B,215
型号： BF556B,215
厂家： NXP    NXP
描述：

N-channel FET TO-236 3-Pin

放大器 光电二极管 晶体管
文件： 总14页 (文件大小：132K)
中文：  中文翻译
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BF556A; BF556B; BF556C  
T23  
SO  
N-channel silicon junction field-effect transistors  
Rev. 4 — 15 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Low leakage level (typ. 500 fA)  
High gain  
Low cut-off voltage.  
1.3 Applications  
Impedance converters in e.g. electret microphones and infrared detectors  
VHF amplifiers in oscillators and mixers.  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
drain-source  
voltage (DC)  
-
-
30  
V
VGSoff  
IDSS  
gate-source cut-off ID = 200 A;  
0.5  
-
7.5  
V
voltage  
VDS = 15 V  
VGS = 0 V; VDS = 15 V  
BF556A  
drain current  
3
-
-
-
-
7
mA  
mA  
mA  
mW  
BF556B  
6
13  
18  
250  
BF556C  
11  
-
Ptot  
total power  
dissipation  
Tamb 25 C  
yfs  
forward transfer  
admittance  
VGS = 0 V; VDS = 15 V  
4.5  
-
-
mS  
 
 
 
 
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
source (s)  
drain (d)  
Simplified outline  
Symbol  
3
d
s
2
g
sym054  
3
gate (g)  
1
2
3. Ordering information  
Table 3.  
Ordering information  
Type number Package  
Name  
Description  
Version  
BF556A  
BF556B  
BF556C  
-
plastic surface mounted package; 3 leads  
SOT23  
4. Marking  
Table 4.  
Marking  
Type number  
BF556A  
Marking code[1]  
24*  
25*  
26*  
BF556B  
BF556C  
[1] * = p: made in Hong Kong.  
* = t: made in Malaysia.  
* = W: made in China.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
2 of 14  
 
 
 
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
VGSO  
VGDO  
IG  
Parameter  
Conditions  
Min  
Max  
30  
30  
30  
10  
Unit  
V
drain-source voltage (DC)  
gate-source voltage  
gate-drain voltage (DC)  
forward gate current (DC)  
total power dissipation  
storage temperature  
junction temperature  
-
open drain  
-
V
open source  
-
V
-
mA  
mW  
C  
C  
[1]  
Ptot  
Tamb 25 C  
-
250  
+150  
150  
Tstg  
65  
Tj  
-
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain  
lead 10 mm2.  
mrc166  
300  
P
tot  
(mW)  
200  
100  
0
0
50  
100  
150  
T
(°C)  
amb  
Fig 1. Power derating curve.  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Parameter  
Symbol  
Conditions  
Typ  
Unit  
[1]  
Rth(j-a)  
thermal resistance from junction  
to ambient  
500  
K/W  
[1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain  
lead 10 mm2.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
3 of 14  
 
 
 
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
7. Static characteristics  
Table 7.  
Static characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
30  
0.5  
Typ  
Max  
-
Unit  
V
V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 V  
-
-
VGSoff  
IDSS  
gate-source cut-off voltage  
drain current  
ID = 200 A; VDS = 15 V  
VGS = 0 V; VDS = 15 V  
BF556A  
7.5  
V
3
-
7
mA  
mA  
mA  
pA  
BF556B  
6
-
13  
BF556C  
11  
-
-
18  
IGSS  
gate-source leakage current  
forward transfer admittance  
VGS = 20 V; VDS = 0 V  
VGS = 0 V; VDS = 15 V  
VGS = 0 V; VDS = 15 V  
0.5  
-
5000  
yfs  
4.5  
-
-
-
mS  
S  
yos  
common source output  
admittance  
40  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
4 of 14  
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
8. Dynamic characteristics  
Table 8.  
Dynamic characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Ciss  
Crss  
gis  
input capacitance  
VDS = 15 V; f = 1 MHz  
VGS = 10 V  
-
-
1.7  
3
-
-
pF  
pF  
VGS = 0 V  
reverse transfer capacitance  
VDS = 15 V; f = 1 MHz  
VGS = 10 V  
-
-
0.8  
0.9  
-
-
pF  
pF  
VGS = 0 V  
common source input  
conductance  
VDS = 10 V; ID = 1 mA  
f = 100 MHz  
-
-
15  
-
-
S  
S  
f = 450 MHz  
300  
gfs  
common source transfer  
conductance  
VDS = 10 V; ID = 1 mA  
f = 100 MHz  
-
-
-
-
-
2
-
-
-
-
-
mS  
mS  
S  
S  
S  
f = 450 MHz  
1.8  
6  
6  
40  
grs  
common source reverse  
conductance  
VDS = 10 V; ID = 1 mA  
f = 100 MHz  
f = 450 MHz  
gos  
common source output  
conductance  
VDS = 10 V; ID = 1 mA  
f = 100 MHz  
-
-
-
30  
60  
40  
-
-
-
S  
f = 450 MHz  
S  
Vn  
equivalent input noise voltage  
VDS = 10 V; ID = 1 mA;  
f = 100 Hz  
nV/Hz  
mrc154  
mrc156  
20  
10  
I
Y
fs  
DSS  
(mA)  
16  
(mS)  
8
6
4
2
0
12  
8
4
0
0
2
4
6
8
0
2
4
6
8
V
(V)  
V
(V)  
GSoff  
GSoff  
VDS = 15 V.  
VDS = 15 V; ID = 1 A.  
Fig 2. Drain current as a function of gate-source  
cut-off voltage; typical values.  
Fig 3. Forward transfer admittance as a function of  
gate-source cut-off voltage; typical values.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
5 of 14  
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
mrc153  
mrc155  
100  
300  
G
os  
(μS)  
80  
R
DSon  
(Ω)  
200  
100  
0
60  
40  
20  
0
0
−2  
−4  
−6  
−8  
0
2
4
6
8
V
(V)  
V
(V)  
GSoff  
GSoff  
VDS = 15 V.  
VDS = 100 mV; VGS = 0 V.  
Fig 4. Common-source output conductance as a  
function of gate-source cut-off voltage; typical  
values.  
Fig 5. Drain-source on-state resistance as a function  
of gate-source cut-off voltage; typical values.  
mrc145  
mrc146  
5
16  
(1)  
I
D
I
D
(mA)  
(mA)  
(1)  
(2)  
4
3
2
1
0
12  
(2)  
(3)  
(3)  
(4)  
8
4
0
(5)  
(6)  
0
4
8
12  
16  
0
4
8
12  
16  
V
(V)  
V
(V)  
DS  
DS  
BF556A  
BF556B  
(1)  
V
GS = 0 V.  
(1) VGS = 0 V.  
(2) VGS = 0.5 V.  
(3) VGS = 1.0 V.  
(2) VGS = 0.5 V.  
(3) VGS = 1.0 V.  
(4)  
VGS = 1.5 V.  
(5) VGS = 2.0 V.  
(6) VGS = 2.5 V.  
Fig 6. Typical output characteristics.  
Fig 7. Typical output characteristics.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
6 of 14  
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
mrc147  
mrc148  
25  
30  
I
D
(mA)  
20  
I
D
(1)  
(2)  
(mA)  
20  
15  
10  
5
(1)  
(3)  
(4)  
10  
(2)  
(3)  
(5)  
(6)  
0
0
0
4
8
12  
16  
−6  
−4  
−2  
0
V
(V)  
V
(V)  
GS  
DS  
BF556C  
VDS = 15 V.  
(1)  
V
GS = 0 V.  
(1) BF556C.  
(2) BF556B.  
(3) BF556A.  
(2) VGS = 1.0 V.  
(3) VGS = 2.0 V.  
(4)  
VGS = 3.0 V.  
(5) VGS = 4.0 V.  
(6) VGS = 5.0 V.  
Fig 8. Typical output characteristics.  
Fig 9. Typical input characteristics.  
mrc149  
mrc151  
3
2
10  
−10  
I
D
I
G
(μA)  
(1)  
(3)  
(2)  
2
(pA)  
10  
(1)  
−10  
10  
1
−1  
−1  
(2)  
(3)  
(4)  
−1  
10  
−10  
−2  
10  
10  
−3  
−2  
−10  
−8  
−6  
−4  
−2  
0
0
4
8
12  
16  
V
20  
(V)  
V
(V)  
GS  
DG  
VDS = 15 V.  
ID = 10 mA only for BF556B and BF556C.  
(1) ID = 10 mA.  
(2) D = 1 mA.  
(3) ID = 0.1 mA.  
(4) IGSS  
(1) BF556C.  
(2) BF556B.  
(3) BF556A.  
I
.
Fig 10. Drain current as a function of gate-source  
voltage; typical values.  
Fig 11. Gate current as a function of drain-gate  
voltage; typical values.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
7 of 14  
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
mrc150  
mrc134  
3
10  
1
C
rss  
I
GSS  
(pF)  
0.8  
(pA)  
2
10  
0.6  
0.4  
0.2  
0
10  
1
−1  
10  
−50  
0
50  
100  
150  
−10  
−8  
−6  
−4  
−2  
0
T (°C)  
j
V
GS  
(V)  
VDS = 0 V; VGS = 20 V.  
VDS = 15 V.  
Fig 12. Gate current as a function of junction  
temperature; typical values.  
Fig 13. Reverse transfer capacitance; typical values.  
mrc140  
mrc142  
2
3
10  
g
, b  
is is  
C
iss  
(mS)  
(pF)  
10  
2
1
0
(1)  
(2)  
1
−1  
10  
−2  
10  
2
3
−10  
−8  
−6  
−4  
−2  
0
10  
10  
10  
V
GS  
(V)  
f (MHz)  
VDS = 15 V.  
VDS = 10 V; ID = 1 mA; Tamb = 25 C.  
(1) bis.  
(2) gis.  
Fig 14. Input capacitance; typical values.  
Fig 15. Common-source input admittance; typical  
values.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
8 of 14  
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
mrc141  
mrc144  
10  
−10  
b
, g  
rs rs  
(mS)  
(1)  
g ,−b  
fs  
(mS)  
fs  
−1  
(1)  
(2)  
−1  
−2  
1
−10  
−10  
−10  
(2)  
−1  
−3  
10  
2
3
2
3
10  
10  
10  
10  
10  
10  
f (MHz)  
f (MHz)  
VDS = 10 V; ID = 1 mA; Tamb = 25 C.  
V
DS = 10 V; ID = 1 mA; Tamb = 25 C.  
(1) gfs.  
(1) brs.  
(2) grs.  
(2) bfs.  
Fig 16. Common-source transfer admittance; typical  
values.  
Fig 17. Common-source reverse admittance; typical  
values.  
mrc143  
mrc278  
3
10  
10  
b
, g  
os os  
V
n
(mS)  
(V)  
(1)  
2
1
10  
−1  
10  
10  
(2)  
−2  
10  
1
2
3
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
f (MHz)  
f (Hz)  
VDS = 10 V; ID = 1 mA; Tamb = 25 C.  
V
DS = 10 V; ID = 1 mA.  
(1) bos  
(2) gos  
.
.
Fig 18. Common-source output admittance;typical  
values.  
Fig 19. Equivalent noise voltage as a function of  
frequency.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
9 of 14  
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
9. Package outline  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
Fig 20. Package outline.  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
10 of 14  
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
10. Revision history  
Table 9.  
Document ID  
BF556A_BF556B_BF556C v.4 20110915  
Revision history  
Release date  
Data sheet status  
Product data sheet  
Change notice Supersedes  
BF556A_BF556B_BF556C v.3  
-
Modifications:  
• The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
• Legal texts have been adapted to the new company name where appropriate.  
• Package outline drawings have been updated to the latest version.  
BF556A_BF556B_BF556C v.3 20040805  
(9397 750 13393)  
Product data sheet  
-
BF556A-B-C v.2  
BF556A-B-C v.2  
19960729  
Product data sheet  
-
-
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
11 of 14  
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
11.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
11.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
12 of 14  
 
 
 
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BF556A_BF556B_BF556C  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 4 — 15 September 2011  
13 of 14  
 
 
BF556A; BF556B; BF556C  
NXP Semiconductors  
N-channel silicon junction field-effect transistors  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 15 September 2011  
Document identifier: BF556A_BF556B_BF556C  
 

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