BF593 [NXP]
NPN high-voltage transistors; NPN型高压晶体管
| 型号： | BF593 |
| 厂家： | 
NXP |
| 描述： | NPN high-voltage transistors |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF591; BF593
NPN high-voltage transistors
1997 Jul 02
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
FEATURES
PINNING
PIN
• Low current (max. 150 mA)
• High voltage (max. 210 V).
DESCRIPTION
1
2
3
emitter
collector, connected to mounting base
base
APPLICATIONS
• Telephone systems.
handbook, halfpage
DESCRIPTION
NPN high-voltage transistor in a TO-202; SOT128B plastic
package.
2
3
1
1
2 3
MAM305
Fig.1 Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BF591
−
−
210
V
V
BF593
250
VCEO
collector-emitter voltage
BF591
open base
−
170
210
300
1.3
−
V
V
BF593
−
ICM
Ptot
hFE
peak collector current
total power dissipation
DC current gain
−
mA
W
T
amb ≤ 55 °C
−
IC = 20 mA; VCE = 5 V
IC = 100 mA; VCE = 6 V
30
30
−
1997 Jul 02
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BF591
−
−
210
V
V
BF593
250
VCEO
collector-emitter voltage
BF591
open base
−
−
−
−
−
−
−
170
210
5
V
V
V
BF593
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
150
300
100
1.3
mA
mA
mA
W
ICM
IBM
Ptot
Tstg
Tj
Tamb ≤ 55 °C
−65
−
+150
150
+150
°C
°C
Tamb
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
73
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 60 V
MIN.
MAX.
UNIT
ICBO
collector cut-off current
−
−
−
50
1
nA
µA
nA
IE = 0; VCB = 60 V; Tj = 140 °C
IC = 0; VEB = 5 V
IEBO
hFE
emitter cut-off current
DC current gain
100
note 1
IC = 20 mA; VCE = 5 V
IC = 100 mA; VCE = 6 V
IC = 150 mA; VCE = 7 V
30
30
20
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01.
1997 Jul 02
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
E
1
c
1
P
P
1
H
E
D
L
1
L
2
L
1
2
3
c
b
w
M
p
Q
e
1
A
e
E
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
L
2
UNIT
b
c
c
D
E
E
e
e
H
E
L
L
P
P
1
Q
w
A
1
1
p
1
1
max
4.6
4.4
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
24.2
23.8
13.3
12.2
2.4
2.0
3.8
3.6
3.9
3.7
1.7
1.5
mm
0.25
5.08
2.54
2.5
Note
1. Plastic flash allowed within this zone
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
SOT128B
TO-202
1997 Jul 02
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 02
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
NOTES
1997 Jul 02
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF591; BF593
NOTES
1997 Jul 02
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jul 02
Document order number: 9397 750 02348
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