BF747T/R [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | BF747T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal |
| 文件： | 总15页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF747
NPN 1 GHz wideband transistor
Rev. 03 — 27 July 2004
Product data sheet
1. Product profile
1.1 General description
Low cost NPN transistor in a SOT23 plastic package.
1.2 Features
■ Stable oscillator operation
■ High current gain
■ Good thermal stability.
1.3 Applications
■ Intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or
oscillator.
1.4 Quick reference data
Table 1:
Symbol
VCEO
VCBO
VEBO
ICM
Quick reference data
Parameter
Conditions
open base
Min
Typ
Max
20
Unit
V
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
transition frequency
-
-
-
-
-
-
-
open emitter
open collector
-
30
V
-
3
V
-
50
mA
mW
GHz
[1]
Ptot
Ts ≤ 70 °C
-
300
1.6
fT
IC = 15 mA;
1.2
VCE = 10 V;
f = 500 MHz
[1] Ts is the temperature at the soldering point of the collector pin.
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
2. Pinning information
Table 2:
Discrete pinning
Pin
1
Description
base
Simplified outline
Symbol
3
3
2
emitter
3
collector
1
2
1
2
sym021
SOT23
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BF747
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4:
Marking
Type number
Marking code[1]
BF747
27*
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCEO
VCBO
VEBO
ICM
Parameter
Conditions
open base
Min
Max
20
Unit
V
collector-emitter voltage
collector-base voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
-
open emitter
open collector
-
30
V
-
3
V
-
50
mA
mW
°C
°C
[1]
Ptot
Ts ≤ 70 °C
-
300
+150
150
Tstg
−55
Tj
-
[1] Ts is the temperature at the soldering point of the collector pin.
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
2 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-s)
Thermal characteristics
Parameter
Conditions
Typ
Unit
[1]
thermal resistance from junction Ts ≤ 70 °C
260
K/W
to soldering point
[1] Ts is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
IE = 0 A; VCB = 10 V
Min
Typ
Max
Unit
ICBO
collector cut-off
current
-
-
100
nA
hFE
fT
DC current gain IC = 2 mA; VCE = 10 V
40
95
250
1.6
transition
frequency
IC = 15 mA;
CE = 10 V;
0.8
1.2
GHz
V
f = 500 MHz
Cre
feedback
capacitance
IE = ie = 0 A;
-
-
0.5
20
-
-
pF
dB
V
CB = 10 V; f = 1 MHz
IC = 15 mA;
CE = 10 V;
f = 100 MHz
[1]
GUM
maximum
unilateral power
gain
V
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s
21
G
= 10 log
dB
-----------------------------------------------------
UM
2
2
(1 – s
)(1 – s
)
22
11
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
3 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
mbb401
mbb397
400
140
P
tot
h
FE
(mW)
300
100
60
200
100
0
20
10
−1
2
0
50
100
150
200
1
10
10
T
(°C)
I
(mA)
s
C
VCE = 10 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
mbb400
mbb399
1.2
1.4
C
re
f
T
(GHz)
(pF)
0.8
1
0.4
0.6
0
0.2
10
−1
2
0
4
8
12
16
V
20
(V)
1
10
10
I (mA)
C
CB
IE = ie = 0 A; f = 1 MHz.
VCE = 10 V; f = 500 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
4 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
mbb407
mbb408
40
50
G
UM
G
UM
(dB)
(dB)
30
30
20
10
0
10
−10
2
3
4
0
10
20
30
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 10 V; f = 100 MHz.
IC = 15 mA; VCE = 10 V.
Fig 5. Maximum unilateral power gain as a function of
collector current.
Fig 6. Maximum unilateral power gain as a function of
frequency.
mbb398
mbb409
10
8
F
(dB)
V
CEsat
(V)
6
4
2
0
1
−1
10
10
−2
−1
2
−1
2
10
1
10
10
10
1
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10.
VCE = 10 V; ZS = ZL = 50 Ω; f = 100 MHz.
Fig 7. Collector-emitter saturation voltage as a
function of collector current.
Fig 8. Common emitter noise figure as a function of
collector current.
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
5 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
mbb410
mbb413
0
80
b
(8)
b
21
11
(7)
(mS)
(mS)
(6)
(2)
(1)
(5)
−20
60
(4)
(1)
−40
−60
−80
40
20
0
(3)
(4)
(5)
(6)
(7)
(2)
(3)
(8)
(9)
10
20
30
40
50
g
60
(mS)
−50
−30
−10
10
g
21
(mS)
11
VCB = 10 V.
(1) IE = −2 mA.
(2) IE = −5 mA.
(3) IE = −10 mA.
(4) f = 200 MHz.
(5) f = 400 MHz.
(6) f = 600 MHz.
(7) f = 800 MHz.
VCB = 10 V.
(1) IE = −10 mA.
(2) IE = −5 mA.
(3) IE = −2 mA.
(4) f = 200 MHz.
(5) f = 300 MHz.
(6) f = 500 MHz.
(7) f = 600 MHz.
(8) f = 800 MHz.
(9) f = 1000 MHz.
(8) f = 1000 MHz.
Fig 9. Common base input admittance (Y11).
Fig 10. Common base forward admittance (Y21).
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
6 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
mbb411
mbb412
0
8
6
4
2
0
b
12
b
22
(mS)
−0.5
(mS)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(5)
(4)
(5)
−1
−1.5
−2
(6)
(7)
(6)
(7)
(8)
(8)
(9)
(9)
−2.5
−0.7
−0.5
−0.3
−0.1
0
0.4
0.8
1.2
1.6
g
(mS)
g
22
(mS)
12
VCB = 10 V.
(1) IE = −10 mA.
(2) IE = −5 mA.
(3) IE = −2 mA.
(4) f = 200 MHz.
(5) f = 300 MHz.
(6) f = 500 MHz.
(7) f = 600 MHz.
(8) f = 800 MHz.
(9) f = 1000 MHz.
VCB = 10 V.
(1) IE = −2 mA.
(2) IE = −5 mA.
(3) IE = −10 mA.
(4) f = 1000 MHz.
(5) f = 800 MHz.
(6) f = 600 MHz.
(7) f = 500 MHz.
(8) f = 300 MHz.
(9) f = 200 MHz.
Fig 11. Common base reverse admittance (Y12).
Fig 12. Common base output admittance (Y22).
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
7 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
50
25
100
10
250
∞
3 GHz
50
+j
10
25
100
250
0
−j
250
40 MHz
10
100
25
mbb403
50
IC = 15 mA; VCE = 10 V; ZO = 50 Ω.
Fig 13. Common emitter input reflection coefficient (S11).
90°
120°
60°
40 MHz
150°
30°
+ϕ
20
16
8
4
2
180°
0°
3 GHz
−ϕ
150°
30°
120°
60°
mbb405
90°
IC = 15 mA; VCE = 10 V.
Fig 14. Common emitter forward transmission coefficient (s21).
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
8 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
90°
120°
60°
3 GHz
150°
30°
+ϕ
0.1
0.2
0.3
0.4
0.5
180°
0°
40 MHz
−ϕ
150°
30°
120°
60°
mbb406
90°
IC = 15 mA; VCE = 10 V.
Fig 15. Common emitter reverse transmission coefficient (s12).
50
25
100
10
250
+j
10
25
50
100
250
0
∞
−j
40 MHz
250
10
3 GHz
100
25
mbb404
50
IC = 15 mA; VCE = 10 V; ZO = 50 Ω.
Fig 16. Common emitter output reflection coefficient (s22).
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
9 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
Table 8:
f (MHz)
Common base Y-parameters; VCB = 10 V; IE = −2 mA; typical values
Y11
Y21
Y12
Y22
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
+69.0
+60.4
+45.0
+34.3
+27.7
+24.0
+21.5
+20.0
+18.6
+18.3
+17.8
−10.2
−20.6
−27.4
−26.4
−23.3
−20.4
−18.0
−15.6
−14.0
−12.8
−11.7
−68.0
−58.0
−39.1
−25.4
−17.2
−11.7
−7.8
+12.3
+25.6
+34.5
+34.0
+31.1
+27.6
+25.0
+22.6
+20.2
+18.7
+17.1
−0.02
−0.06
−0.10
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.20
−0.1
−0.3
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−2.2
−0.01
−0.08
+0.19
+0.29
+0.37
+0.45
+0.53
+0.60
+0.69
+0.82
+0.95
+0.3
+0.7
+1.4
+1.9
+2.5
+3.0
+3.6
+4.2
+4.7
+5.3
+5.9
100
200
300
400
500
600
700
800
900
1000
−5.3
−3.0
−1.3
−0.1
Table 9:
f (MHz)
Common base Y-parameters; VCB = 10 V; IE = −5 mA; typical values
Y11
Y21
Y12
Y22
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
+132.6
+96.3
+54.7
+37.5
+29.2
+25.3
+22.0
+20.3
+18.7
+17.8
+17.3
−35.7
−62.0
−57.8
−46.9
−38.6
−32.8
−28.4
−25.2
−22.6
−20.7
−19.1
−130.5
−91.1
−46.0
−26.4
−16.6
−11.0
−6.3
+38.8
+67.9
+64.7
+53.8
+45.8
+39.8
+35.0
+31.4
+27.6
+25.2
+23.0
−0.06
−0.20
−0.30
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.40
−0.2
−0.5
−0.7
−0.8
−1.0
−1.3
−1.4
−1.6
−1.9
−2.1
−2.3
−0.06
+0.21
+0.38
+0.47
+0.58
+0.63
+0.71
+0.80
+0.88
+1.01
+1.15
+0.4
+0.8
+1.4
+2.0
+2.5
+3.1
+3.6
+4.2
+4.7
+5.3
+6.0
100
200
300
400
500
600
700
800
900
1000
−3.3
−0.6
+1.4
+3.0
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
10 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
Table 10: Common base Y-parameters; VCB = 10 V; IE = −10 mA; typical values
f (MHz)
Y11
Y21
Y12
Y22
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
+189.0
+108.5
+55.2
+37.1
+28.8
+24.7
+21.2
+19.3
+17.2
+16.4
+15.8
−79.6
−99.0
−76.2
−59.0
−47.6
−40.2
−35.0
−31.0
−27.5
−25.2
−23.0
−185.5
−101.4
−44.6
−24.3
−14.6
−8.6
+83.0
+105.4
+82.8
+65.7
+54.4
+46.7
+40.8
+36.2
+31.1
+28.3
+25.5
−0.10
−0.30
−0.50
−0.50
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.3
−0.5
−0.7
−0.9
−1.0
−1.3
−1.5
−1.7
−1.9
−2.1
−2.3
−0.09
+0.30
+0.44
+0.60
+0.69
+0.75
+0.84
+0.93
+1.00
+1.15
+1.31
+0.4
+0.9
+1.4
+2.0
+2.5
+3.1
+3.6
+4.2
+4.7
+5.3
+6.0
100
200
300
400
500
600
700
800
900
1000
−3.4
−0.2
+2.6
+4.6
+6.0
Table 11: Common base Y-parameters; VCB = 10 V; IE = −15 mA; typical values
f (MHz)
Y11
Y21
Y12
Y22
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
REAL
(mS)
IMAG.
(mS)
40
+206.5
+104.3
+53.1
+=35.9
+28.1
+23.4
+20.1
+18.2
+16.2
+15.5
+14.7
−113.8
−114.0
−81.1
−62.1
−50.0
−42.3
−36.4
−32.0
−28.2
−25.7
−23.5
−202.6
−96.4
−41.7
−22.0
−12.5
−6.1
+118.1
+120.1
+87.7
+68.6
+56.9
+48.2
+41.6
+36.7
+31.3
+28.1
+24.9
−0.20
−0.40
−0.50
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.60
−0.3
−0.5
−0.7
−0.8
−1.1
−1.3
−1.5
−1.7
−1.9
−2.1
−2.3
+0.2
+0.4
+0.6
+0.7
+0.8
+0.8
+0.9
+1.0
+1.1
+1.3
+1.4
+0.5
+0.9
+1.4
+2.0
+2.5
+3.1
+3.6
+4.2
+4.7
+5.3
+5.9
100
200
300
400
500
600
700
800
900
1000
−1.2
+2.0
+4.5
+6.5
+7.9
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
11 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 17. Package outline.
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
12 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
9. Revision history
Table 12: Revision history
Document ID
BF747_3
Release date Data sheet status
20040727 Product data sheet
• Marking code changed; see Table 4
Change notice Order number
Supersedes
-
9397 750 13394 BF747_2
Modifications:
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
13 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13394
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 27 July 2004
14 of 15
BF747
Philips Semiconductors
NPN 1 GHz wideband transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 27 July 2004
Document order number: 9397 750 13394
Published in The Netherlands
相关型号：
BF747TRL
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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BF747TRL13
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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