BF763 [NXP]
NPN 2 GHz wideband transistor; NPN 2 GHz的宽带晶体管型号: | BF763 |
厂家: | NXP |
描述: | NPN 2 GHz wideband transistor |
文件: | 总5页 (文件大小:29K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF763
NPN 2 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
DESCRIPTION
PINNING
PIN
NPN transistor in a plastic SOT54
(TO-92 variant) envelope.
DESCRIPTION
Code: F763
1
2
3
It is primarily intended for use in RF
amplifiers and oscillators.
1
2
3
emitter
base
collector
MSB034
Fig.1 SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CEO
collector-emitter breakdown voltage open base
DC collector current
15
−
−
−
V
IC
−
25
360
250
−
mA
mW
Ptot
hFE
fT
total power dissipation
DC current gain
up to Tamb = 60 °C
−
−
IC = 5 mA; VCE = 10 V; Tj = 25 °C
25
−
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz −
1.8
GHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
15
V
open base
25
V
25
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 60 °C
360
150
150
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-a
thermal resistance from junction to
ambient
in free air
250 K/W
September 1995
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-emitter breakdown voltage IC = 1 mA; IB = 0
collector-base breakdown voltage IC = 10 µA; IE = 0
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CEO
V(BR)CBO
VCE sat
ICBO
15
25
−
−
−
V
−
−
V
−
0.5
50
250
−
V
collector cut-off current
DC current gain
IE = 0; VCB = 10 V
−
−
nA
hFE
IC = 5 mA; VCE = 10 V
25
−
−
fT
transition frequency
noise figure
IC = 5 mA; VCE = 10 V; f = 100 MHz
IC = 5 mA; VCE = 10 V; f = 800 MHz;
1.8
5.0
GHz
dB
F
−
−
T
amb = 25 °C; Zs = 60 Ω
September 1995
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
L
2
1
UNIT
mm
A
b
b
c
D
d
E
e
e
L
1
1
max
max
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
2.54
1.27
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-04-14
SOT54 variant
TO-92
SC-43
September 1995
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF763
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
5
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