BF763 [NXP]

NPN 2 GHz wideband transistor; NPN 2 GHz的宽带晶体管
BF763
型号: BF763
厂家: NXP    NXP
描述:

NPN 2 GHz wideband transistor
NPN 2 GHz的宽带晶体管

晶体 晶体管
文件: 总5页 (文件大小:29K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BF763  
NPN 2 GHz wideband transistor  
September 1995  
Product specification  
File under Discrete Semiconductors, SC14  
Philips Semiconductors  
Product specification  
NPN 2 GHz wideband transistor  
BF763  
DESCRIPTION  
PINNING  
PIN  
NPN transistor in a plastic SOT54  
(TO-92 variant) envelope.  
DESCRIPTION  
Code: F763  
1
2
3
It is primarily intended for use in RF  
amplifiers and oscillators.  
1
2
3
emitter  
base  
collector  
MSB034  
Fig.1 SOT54.  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
V(BR)CEO  
collector-emitter breakdown voltage open base  
DC collector current  
15  
V
IC  
25  
360  
250  
mA  
mW  
Ptot  
hFE  
fT  
total power dissipation  
DC current gain  
up to Tamb = 60 °C  
IC = 5 mA; VCE = 10 V; Tj = 25 °C  
25  
transition frequency  
IC = 5 mA; VCE = 10 V; f = 100 MHz −  
1.8  
GHz  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
VCEO  
IC  
collector-base voltage  
collector-emitter voltage  
DC collector current  
total power dissipation  
storage temperature  
junction temperature  
15  
V
open base  
25  
V
25  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
up to Tamb = 60 °C  
360  
150  
150  
65  
°C  
THERMAL RESISTANCE  
SYMBOL  
PARAMETER  
CONDITIONS  
THERMAL RESISTANCE  
Rth j-a  
thermal resistance from junction to  
ambient  
in free air  
250 K/W  
September 1995  
2
Philips Semiconductors  
Product specification  
NPN 2 GHz wideband transistor  
BF763  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
collector-emitter breakdown voltage IC = 1 mA; IB = 0  
collector-base breakdown voltage IC = 10 µA; IE = 0  
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA  
CONDITIONS  
MIN. TYP. MAX. UNIT  
V(BR)CEO  
V(BR)CBO  
VCE sat  
ICBO  
15  
25  
V
V
0.5  
50  
250  
V
collector cut-off current  
DC current gain  
IE = 0; VCB = 10 V  
nA  
hFE  
IC = 5 mA; VCE = 10 V  
25  
fT  
transition frequency  
noise figure  
IC = 5 mA; VCE = 10 V; f = 100 MHz  
IC = 5 mA; VCE = 10 V; f = 800 MHz;  
1.8  
5.0  
GHz  
dB  
F
T
amb = 25 °C; Zs = 60 Ω  
September 1995  
3
Philips Semiconductors  
Product specification  
NPN 2 GHz wideband transistor  
BF763  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)  
SOT54 variant  
c
L
2
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
L
2
1
UNIT  
mm  
A
b
b
c
D
d
E
e
e
L
1
1
max  
max  
5.2  
5.0  
0.48  
0.40  
0.66  
0.56  
0.45  
0.40  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
2.54  
1.27  
2.5  
2.5  
Notes  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-04-14  
SOT54 variant  
TO-92  
SC-43  
September 1995  
4
Philips Semiconductors  
Product specification  
NPN 2 GHz wideband transistor  
BF763  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
September 1995  
5

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