BF858A [NXP]
TRANSISTOR 0.1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power;
| 型号： | BF858A |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 0.1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power 晶体 晶体管 功率双极晶体管 高压 局域网 |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF857; BF858; BF859
NPN high-voltage transistors
1996 Dec 09
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
DESCRIPTION
NPN transistors in a TO-202 plastic package.
handbook, halfpage
An A-version with e-b-c pinning instead of e-c-b is
available on request.
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
PINNING
PIN
1
DESCRIPTION
emitter
1
2
3
MBH794
2
collector, connected to mounting base
base
3
Fig.1 Simplified outline (TO-202) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BF857
open emitter
open base
−
−
−
160
V
V
V
BF858
250
300
BF859
VCEO
collector-emitter voltage
BF857
−
−
−
−
−
160
250
300
300
6
V
V
V
BF858
BF859
ICM
Ptot
hFE
Cre
fT
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
mA
W
T
mb ≤ 75 °C
IC = 30 mA; VCE = 10 V
26
−
−
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 100 MHz
3
pF
90
−
MHz
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BF857
−
−
−
160
V
BF858
250
300
V
V
BF859
VCEO
collector-emitter voltage
BF857
open base
−
−
−
−
−
−
−
−
−
160
250
300
5
V
BF858
V
BF859
V
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
V
100
300
100
2
mA
mA
mA
W
W
°C
°C
°C
ICM
IBM
Ptot
Tamb ≤ 25 °C
mb ≤ 75 °C
T
6
Tstg
Tj
storage temperature
−65
−
+150
150
+150
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
62.5
12.5
Rth j-mb
thermal resistance from junction to mounting base
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 100 V
MIN.
MAX.
UNIT
ICBO
collector cut-off current
BF857
−
−
0.1
µA
µA
ICBO
collector cut-off current
BF858
IE = 0; VCB = 200 V
IE = 0; VCB = 250 V
0.1
ICBO
collector cut-off current
BF859
−
−
0.1
100
−
µA
IEBO
hFE
VCEsat
Cre
emitter cut-off current
DC current gain
IC = 0; VEB = 5 V
nA
IC = 30 mA; VCE = 10 V
IC = 30 mA; IB = 6 mA
IC = ic = 0; VCE = 30 V; f = 1 MHz
26
−
collector-emitter saturation voltage
feedback capacitance
transition frequency
1
V
−
3
pF
fT
IC = 15 mA; VCE = 10 V; f = 100 MHz 90
−
MHz
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
PACKAGE OUTLINE
10.4 max
0.56 max
3.8
3.6
3.8
24.2
max
8.6
max
(1)
2.4 max
2.5 max
12.2
min
1
2
3
0.8
0.6
(3x)
0.65 max
2.54 2.54
1.6
4.6
max
MGA322
10
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
NOTES
1996 Dec 09
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF857; BF858; BF859
NOTES
1996 Dec 09
7
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© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117041/00/02/pp8
Date of release: 1996 Dec 09
Document order number: 9397 750 01572
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