BF908WR [NXP]
N-channel dual-gate MOS-FET; N沟道双栅极的MOS- FET的
| 型号： | BF908WR |
| 厂家： | 
NXP |
| 描述： | N-channel dual-gate MOS-FET |
| 文件： | 总7页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF908WR
N-channel dual-gate MOS-FET
1995 Apr 25
Preliminary specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
FEATURES
PINNING
PIN
• High forward transfer admittance
SYMBOL
DESCRIPTION
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
1
2
3
4
s, b
d
source
drain
• Low noise gain controlled amplifier up to 1 GHz.
g2
g1
gate 2
gate 1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
d
3
4
g
2
DESCRIPTION
g
1
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
2
1
s,b
Top view
MAM198
CAUTION
Marking code: MD.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
TYP.
MAX.
12
UNIT
−
−
−
−
−
−
−
−
V
ID
drain current
40
mA
mW
°C
Ptot
Tj
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
300
150
50
yfs
36
2.4
20
−
43
mS
pF
Cig1-s
Crs
F
3.1
30
4
f = 1 MHz
f = 800 MHz
45
fF
1.5
2.5
dB
1995 Apr 25
2
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
drain current
CONDITIONS
MIN.
MAX.
12
UNIT
−
−
−
−
−
V
ID
40
mA
mA
mA
mW
IG1
IG2
Ptot
gate 1 current
±10
±10
300
gate 2 current
total power dissipation
up to Tamb = 45 °C; see Fig.2;
note 1
Tstg
Tj
storage temperature
−65
+150
+150
°C
°C
operating junction temperature
−
Note
1. Device mounted on a printed-circuit board.
MLD154
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
50
100
150
200
o
T
( C)
amb
Fig.2 Power derating curve.
1995 Apr 25
3
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
Ts = 87 °C; note 2
VALUE
350
UNIT
K/W
K/W
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
210
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)G1-SS
V(BR)G2-SS
V(P)G1-S
V(P)G2-S
IDSS
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA
gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA
8
−
20
V
8
−
20
V
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
VG2-S = 4 V; VDS = 8 V; ID = 20 µA −
VG1-S = 4 V; VDS = 8 V; ID = 20 µA −
−
−2
V
−
−1.5
27
V
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
3
−
−
15
−
mA
nA
nA
IG1-SS
gate 1 cut-off current
50
IG2-SS
gate 2 cut-off current
−
50
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
yfs
PARAMETER
CONDITIONS
MIN.
36
TYP. MAX. UNIT
forward transfer admittance pulsed; Tj = 25 °C
43
50
4
mS
pF
pF
pF
fF
Cig1-s
Cig2-s
Cos
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
f = 1 MHz
f = 1 MHz
f = 1 MHz
2.4
1.2
1.2
20
−
3.1
1.8
1.7
30
2.5
2.2
45
1.2
2.5
Crs
reverse transfer capacitance f = 1 MHz
noise figure f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = GSopt; BS = BSopt
F
0.6
1.5
dB
dB
−
1995 Apr 25
4
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
MRC281
MRC282
30
40
handbook, halfpage
handbook, halfpage
V
=
G1-S
V
= 4 V
I
G2-S
D
I
0.3 V
D
(mA)
30
(mA)
3 V
2 V
0.2 V
20
0.1 V
0 V
1.5 V
1 V
20
10
0
10
–0.1 V
0.5 V
0 V
–0.2 V
–0.3 V
0
0
4
8
12
16
(V)
–0.6
–0.4
–0.2
0
0.2
0.4
0.6
(V)
V
V
G1-S
DS
VDS = 8 V.
VG2-S = 4 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
MRC280
MRC276
50
60
4 V
Y
fs
3 V
2 V
Y
fs
(mS)
(mS)
40
1.5 V
40
30
20
10
0
1 V
20
0.5 V
V
= 0 V
G2-S
5
0
40
0
40
80
120
160
( C)
0
10
15
20
25
(mA)
o
T
I
j
D
VDS = 8 V.
Tj = 25 °C.
Fig.5 Forward transfer admittance as a function
of drain current; typical values.
Fig.6 Forward transfer admittance as a function
of junction temperature; typical values.
1995 Apr 25
5
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
PACKAGE OUTLINE
1.00
max
0.1
max
0.4
0.2
0.2
A
0.2
B
M
M
0.2
3
4
A
1.35
1.15
2.2
2.0
0.3
0.1
2
1
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB367
Dimensions in mm.
Fig.7 SOT343R.
1995 Apr 25
6
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 25
7
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BF908WR-TAPE-13
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NXP
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