BF990A-T [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-143, 4 PIN, FET RF Small Signal;
| 型号： | BF990A-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, SOT-143, 4 PIN, FET RF Small Signal 栅极 |
| 文件： | 总8页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF990A
N-channel dual-gate MOS-FET
April 1991
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
FEATURES
DESCRIPTION
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
handbook, halfpage
d
• RF applications such as:
4
3
2
– Television tuners with 12 V supply voltage
– Professional communication equipment.
g
2
g
1
PINNING
PIN
1
SYMBOL
DESCRIPTION
source
1
s, b
d
s,b
Top view
Marking code: M87.
MAM039
2
drain
3
g2
g1
gate 2
gate 1
4
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
TYP.
MAX.
18
UNIT
VDS
ID
−
−
−
−
V
drain current
30
200
150
−
mA
mW
°C
Ptot
Tj
total power dissipation
junction temperature
transfer admittance
up to Tamb = 60 °C
Yfs
Cig1-s
Crs
F
f = 1 kHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 19
mS
pF
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 2.6
3
feedback capacitance
noise figure
f = 1 MHz; ID = 10 mA; VDS = 10 V; VG2-S = 4 V 25
f = 800 MHz; GS = 5 mS; BS = BSopt
ID = 10 mA; VDS = 10 V; VG2-S = 4 V
−
fF
;
2
3
dB
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
ID
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
18
UNIT
−
−
−
−
−
V
drain current (DC)
30
mA
mA
mA
mW
°C
IG1-S
IG2-S
Ptot
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
±10
±10
200
+150
150
up to Tamb = 60 °C; note 1
Tstg
−65
Tj
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
460
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MGE792
200
handbook, halfpage
P
tot
(mW)
100
0
0
100
200
T
(°C)
amb
Fig.2 Power derating curve.
April 1991
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
IG1-SS
PARAMETER
gate 1 cut-off current
gate 2 cut-off current
CONDITIONS
MIN.
MAX.
UNIT
nA
VG1-S = ±7 V; VG2-S = VDS = 0
VG2-S = ±7 V; VG1-S = VDS = 0
IG1-SS = ±10 mA; VG2-S = VDS = 0
IG2-SS = ±10 mA; VG1-S = VDS = 0
ID = 20 µA; VDS = 10 V; VG2-S = 4 V
ID = 20 µA; VDS = 10 V; VG1-S = 0
−
−
±25
±25
±20
±20
−1.3
−1.1
IG2-SS
nA
V
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
±8
±8
−
V
V(P)G1-S
V(P)G2-S
gate 1-source cut-off voltage
gate 2-source cut-off voltage
V
−
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
18
TYP.
MAX.
UNIT
Yfs
Cig1-s
Cig2-s
Crs
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
19
2.6
1.4
25
1.2
2
−
3
−
−
−
3
mS
pF
pF
fF
−
−
−
−
−
Cos
F
pF
dB
noise figure
f = 800 MHz; GS = 5 mS; BS = BSopt
MGD832
MGD833
24
20
handbook, halfpage
handbook, halfpage
V
+0.4 V
G1−S
I
D
max
typ
I
D
(mA)
(mA)
+0.2 V
0 V
16
min
10
−0.2 V
8
0
−0.4 V
−0.6 V
0
0
−1.5
−1.0
−0.5
0
0.5
1.0
(V)
4
8
12
16
V
(V)
DS
V
G1-S
VG2-S = 4 V; Tamb = 25 °C.
VDS = 10 V; VG2-S = 4 V; Tamb = 25 °C.
Fig.3 Output characteristics.
Fig.4 Transfer characteristics.
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
See also “Soldering recommendations”.
Fig.5 SOT143.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
5
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
NOTES
April 1991
6
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
NOTES
April 1991
7
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© Philips Electronics N.V. 1996
SCA52
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Printed in The Netherlands
117061/00/02/pp8
Date of release: April 1991
Document order number: 9397 750 01516
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