BF992,215_技术文档

BF992

Silicon N-channel dual gate MOS-FET

Rev. 04 — 21 November 2007

Product data sheet

IMPORTANT NOTICE

Dear customer,

As from October 1st, 2006 Philips Semiconductors has a new trade name

- NXP Semiconductors, which will be used in future data sheets together with new contact

details.

In data sheets where the previous Philips references remain, please use the new links as

shown below.

http://www.philips.semiconductors.com use http://www.nxp.com

http://www.semiconductors.philips.com use http://www.nxp.com (Internet)

sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com

(email)

The copyright notice at the bottom of each page (or elsewhere in the document,

depending on the version)

is replaced with:

If you have any questions related to the data sheet, please contact our nearest sales

ofﬁce via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your

cooperation and understanding,

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

APPLICATIONS

PINNING

• VHF applications such as VHF television tuners and FM

tuners with 12 V supply voltage. The device is also

suitable for use in professional communications

equipment.

SYMBOL

DESCRIPTION

1

2

3

4

s, b

d

source

drain

g₂

g₁

gate 2

gate 1

DESCRIPTION

Depletion type field-effect transistor in a plastic

micro-miniature SOT143B package with source and

substrate interconnected.

handbook, halfpage

d

4

3

The transistor is protected against excessive input voltage

surges by integrated back-to-back diodes between gates

and source.

g

2

g

1

CAUTION

1

2

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

s,b

Top view

Marking code: %MB.

MAM039

Fig.1 Simplified outline (SOT143B) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

20

UNIT

V_DS

I_D

drain-source voltage (DC)

drain current (DC)

−

V

40

200

−

mA

mW

mS

P_tot

Y_fs

total power dissipation

forward transfer admittance

T_amb= 60 °C

f = 1 kHz; I_D= 15 mA; V_DS= 10 V;

V_G2-S= 4 V

25

C_ig1-s

C_rs

F

input capacitance at gate 1

reverse transfer capacitance

noise ﬁgure

f = 1 MHz; I_D= 15 mA; V_DS= 10 V;

V_G2-S= 4 V

4

−

pF

fF

f = 1 MHz; I_D= 15 mA; V_DS= 10 V;

V_G2-S= 4 V

30

−

G_S= 2 mS; I_D= 15 mA; V_DS= 10 V; 1.2

V_G2-S= 4 V; f = 200 MHz

−

dB

°C

T_j

operating junction temperature

−

150

Rev. 04 - 21 November 2007

2 of 9

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V_DS

PARAMETER

CONDITIONS

MIN.

MAX.

20

UNIT

drain-source voltage

drain current

−

V

I_D

40

mA

mW

°C

I_G1

I_G2

P_tot

T_stg

T_j

gate 1 current

±10

200

+150

150

gate 2 current

total power dissipation

storage temperature

operating junction temperature

T

_amb≤ 60 °C; see Fig.2; note 1

−65

−

°C

Note

1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.

MBL033

handbook, halfpage

200

P

tot max

(mW)

100

0

100

200

o

T

( C)

amb

Fig.2 Power derating curves.

Rev. 04 - 21 November 2007

3 of 9

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

note 1

VALUE

460

UNIT

R_{th j-a}

thermal resistance from junction to ambient in free air

K/W

Note

1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.

STATIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

20

UNIT

±V_(BR)G1-SSgate 1-source breakdown voltage

±V_(BR)G2-SSgate 2-source breakdown voltage

V_G2-S= V_DS= 0; I_G1-SS= ±10 mA

V_G1-S= V_DS= 0; I_G2-SS= ±10 mA

V_G2-S= 4 V; V_DS= 10 V; I_D= 20 µA

V_G1-S= 0; V_DS= 10 V; I_D= 20 µA

V_G2-S= V_DS= 0; V_G1-S= ±7 V

V_G1-S= V_DS= 0; V_G2-S= ±7 V

8

V

20

1.3

1.1

25

V

−V_(P)G1-S

−V_(P)G2-S

±I_G1-SS

gate 1-source cut-off voltage

gate 2-source cut-off voltage

gate 1 cut-off current

0.2

−

V

nA

±I_G2-SS

gate 2 cut-off current

−

25

DYNAMIC CHARACTERISTICS

Common source; T_amb= 25 °C; V_DS= 10 V; V_G2-S= 4 V; I_D= 15 mA; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

20

TYP.

25

MAX.

UNIT

y_fs

C_ig1-s

C_ig2-s

C_os

C_rs

forward transfer admittance

input capacitance at gate 1

input capacitance at gate 2

output capacitance

−

mS

pF

fF

f = 1 MHz

−

4

−

f = 1 MHz

1.7

2

−

f = 1 MHz

−

reverse transfer capacitance

noise ﬁgure

f = 1 MHz

30

1.2

40

−

F

f = 200 MHz; G_S= 2 mS

dB

Rev. 04 - 21 November 2007

4 of 9

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

MGE797

MGE799

24

30

handbook, halfpage

4 V

3 V

I

D

(mA)

I

V

= 5 V

2 V

D

G2-S

20

16

12

8

V

= 0.2 V

(mA)

G1-S

0.1 V

0 V

20

1 V

−0.1 V

−0.2 V

−0.3 V

10

0 V

−0.4 V

−0.5 V

−0.6 V

4

0

−1

0

2

4

6

8

10

(V)

12

0

1

V

(V)

G1-S

V

DS

V_G2-S= 4 V; T_j= 25 °C.

V_DS= 10 V; T_j= 25 °C.

Fig.3 Output characteristics; typical values.

Fig.4 Transfer characteristics; typical values.

MGE798

MGE800

30

handbook, halfpage

5 V

4 V

3 V

Y

|y

|

fs

(mS)

V

=

G2-S

fs

(mS)

5 V

4 V

2 V

20

3 V

2 V

10

1 V

V

= 0 V

G2-S

1 V

0 V

0

−1

0

10

20

0

1

I

(mA)

V

(V)

D

G1-S

V_DS= 10 V; T_j= 25 °C.

Fig.5 Forward transfer admittance as a function

of drain current; typical values.

Fig.6 Forward transfer admittance as a function

of gate 1-source voltage; typical values.

Rev. 04 - 21 November 2007

5 of 9

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

MGE794

MGE793

2

10

handbook, halfpage

y

is

y

os

(mS)

b

(mS)

os

10

b

1

is

1

g

os

is

−1

10

−1

10

−2

10

2

3

2

3

10

f (MHz)

V_DS= 10 V; V_G2-S= 4 V; I_D= 15 mA; T_amb= 25 °C.

Fig.7 Input admittance as a function of frequency;

typical values.

Fig.8 Output admittance as a function of

frequency; typical values.

MGE796

MGE795

120

25

handbook, halfpage

g

fs

Y

fs

(mS)

20

y

rs

(µS)

80

15

10

−b

rs

−b

fs

40

5

0

g

rs

0

2

3

2

3

10

f (MHz)

V_DS= 10 V; V_G2-S= 4 V; I_D= 15 mA; T_amb= 25 °C.

Fig.9 Forward transfer admittance as a function

of frequency; typical values.

Fig.10 Reverse transfer admittance as a function

of frequency; typical values.

Rev. 04 - 21 November 2007

6 of 9

NXP Semiconductors

Product speciﬁcation

Silicon N-channel dual gate MOS-FET

BF992

PACKAGE OUTLINE

Plastic surface mounted package; 4 leads

SOT143B

D

B

E

A

X

y

H

v

M

A

E

e

b

w

M

B

p

4

3

Q

A

1

c

1

2

L

p

b

1

e

1

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

max

UNIT

A

b

c

D

E

e

H

L

p

Q

v

w

y

p

1

E

1.1

0.9

0.48

0.38

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

mm

1.9

1.7

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT143B

Rev. 04 - 21 November 2007

7 of 9

BF992

NXP Semiconductors

Silicon N-channel dual gate MOS-FET

Legal information

Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

malfunction of an NXP Semiconductors product can reasonably be expected

Deﬁnitions

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Rev. 04 - 21 November 2007

8 of 9

BF992

NXP Semiconductors

Silicon N-channel dual gate MOS-FET

Revision history

Document ID

BF992_N_4

Release date

20071121

Data sheet status

Change notice

Supersedes

Product data sheet

-

BF992_3

Modiﬁcations:

• Fig. 1 on page 2; Figure note changed

BF992_3

19990811

Product speciﬁcation

-

BF992_2

(9397 750 06013)

BF992_2

19960730

-

Product speciﬁcation

-

BF992_SF_1

-

BF992_SF_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 November 2007

Document identifier: BF992_N_4


型号：	BF992,215
厂家：	NXP
描述：	N-channel dual-gate MOSFET SOT-143 4-Pin 放大器光电二极管晶体管
文件：	总9页 (文件大小：246K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BF992,215 [NXP]

相关型号：

BF992-TAPE-13

BF992-TAPE-7

BF992/R

BF992R

BF992R-T

BF992T/R

BF992TRL

BF992TRL13

BF992_15

BF992_2015

BF993

BF994