BFE520 [NXP]
NPN wideband differential transistor; NPN宽带差分晶体管
| 型号： | BFE520 |
| 厂家： | 
NXP |
| 描述： | NPN wideband differential transistor |
| 文件： | 总8页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFE520
NPN wideband differential
transistor
1996 Oct 08
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
FEATURES
PINNING - SOT353B
• Small size
PIN
SYMBOL
DESCRIPTION
• High power gain at low bias current and voltage
• Temperature matched
b1
e
1
2
3
4
5
base 1
emitter
base 2
• Balanced configuration
• hFE matched
b2
c2
c1
collector 2
collector 1
• Continues to operate at VCE < 1 V.
APPLICATIONS
• Single balanced mixers
• Balanced amplifiers
• Balanced oscillators.
3
2
1
handbook, halfpage
c
c
2
1
b
b
2
1
DESCRIPTION
e
4
5
Emitter coupled dual NPN silicon RF transistor in a surface
mount 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
Top view
MAM211
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Any single transistor
Cre
feedback capacitance CBC
Ie = 0; VCB = 3 V; f = 1 MHz
−
0.35
16
0.4
−
pF
dB
dB
dB
MSG/Gmax maximum power gain
IC = 20 mA; VCE = 3 V; f = 900 MHz
IC = 20 mA; VCE = 3 V; f = 2 GHz
−
−
−
9
−
F
noise figure
IC = 5 mA; VCE = 3 V; f = 900 MHz;
1.1
1.6
ΓS = Γopt
IC = 5 mA; VCE = 3 V; f = 2 GHz;
−
1.9
−
dB
ΓS = Γopt
hFE
DC current gain
IC = 20 mA; VCE = 3 V
single loaded
60
−
120
−
250
230
115
Rth j-s
thermal resistance from
junction to soldering point
K/W
K/W
double loaded
−
−
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Any single transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
−
20
8
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
V
open collector
−
2.5
70
1
V
−
mA
W
Ptot
Tstg
Tj
up to Ts = 118 °C; note 1
−
−65
−
+175 °C
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth j-s
thermal resistance from junction
to soldering point; note 1
single loaded
double loaded
230
115
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
collector-base breakdown voltage
IC = 2.5 µA; IE = 0
20
−
−
V
collector-emitter breakdown voltage IC = 10 µA; IB = 0
8
−
−
V
emitter-base breakdown voltage
collector-base leakage current
DC current gain
IE = 2.5 µA; IC = 0
IE = 0; VCB = 6 V
2.5
−
−
−
V
−
50
250
nA
hFE
IC = 20 mA; VCE = 6 V
60
120
DC characteristics of the dual transistor
∆hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 20 mA;
VCE1 = VCE2 = 6 V
1
0
1.2
1
−
−
∆VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 30 mA; Tamb = 25 °C
mV
AC characteristics of any single transistor
fT
transition frequency
IC = 20 mA; VCE = 3 V;
f = 1 GHz
−
9
−
GHz
Cc
collector capacitance
feedback capacitance
IE = ie = 0; VCB = 3 V; f = 1 MHz
IC = 0; VCB = 3 V; f = 1 MHz
−
−
−
0.4
0.35
16
0.45
0.4
−
pF
pF
dB
Cre
MSG/Gmax maximum power gain; note 1
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
IC = 20 mA; VCE = 3 V;
f = 2 GHz; Tamb = 25 °C
−
9
−
dB
dB
dB
dB
insertion power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
13
−
14
1.1
1.9
−
2
s21
F
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
1.6
−
IC = 5 mA; VCE = 3 V;
−
f = 2 GHz; ΓS = Γopt
Note
1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
C1
C2
handbook, halfpage
SEQUENCE No. PARAMETER VALUE
UNIT
fA
1
IS
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
775.3
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
LP
LP
2
BF
−
3
NF
−
B1
B2
T1
T2
LB
LB
4
VAF
IKF
ISE
NE
V
5
mA
fA
−
LE
LE
6
7
8
BR
−
LP
9
NR
−
MBG190
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VAR
IKR
ISC
NC
V
E
mA
aA
−
Fig.2 Package equivalent circuit SOT353B
(inductance only).
RB
Ω
IRB
RBM
RE
µA
Ω
mΩ
Ω
Lead inductances (nH)
RC
XTB
EG
−
LP
LB
LE
0.4
0.8
0.6
eV
−
XTI
CJE
VJE
MJE
TF
pF
mV
−
ps
−
XTF
VTF
ITF
E
35
3.5
2
V
mA
deg
fF
mV
−
B2
C2
C1
35
35
PTF
CJC
VJC
MJC
XCJC
TR
36
36
B1
35
E
2
15
C2
MBG191
−
B2
ps
F
CJS
VJS
MJS
FC
mV
−
Fig.3 Package capacitance (fF) between
indicated nodes.
−
Note
1. These parameters have not been extracted, the
default values are shown.
1996 Oct 08
5
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
Typical application circuit
+V
CC
IF out
RF in
LO in
+V
CC
MBG192
Fig.4 Single balanced switching mixer amplifier, featuring high LO↔RF isolation and linearity.
1996 Oct 08
6
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
PACKAGE OUTLINE
0.2
0.17
0.10
1.0
0.8
0.1
0.0
0.8
0.6
0.3
0.1
0.2
B
M
B
1.35
1.15
A
1
2
3
5
4
0.65
0.65
0.25
0.15
(5x)
2.2
1.8
2.2
2.0
0.2
M
A
MSA365
Dimensions in mm.
Fig.5 SOT353.
1996 Oct 08
7
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
8
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