BFG17A [NXP]
NPN 3 GHz wideband transistor; NPN 3 GHz的宽带晶体管
| 型号： | BFG17A |
| 厂家： | 
NXP |
| 描述： | NPN 3 GHz wideband transistor |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG17A
NPN 3 GHz wideband transistor
1995 Sep 12
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
DESCRIPTION
PINNING
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
PIN
DESCRIPTION
4
3
Code: E6
1
2
3
4
collector
base
It is intended for use in wideband
aerial amplifiers using SMD
technology.
emitter
emitter
1
2
Top view
MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
−
−
25
V
−
15
V
−
50
mA
mW
Ptot
up to Ts = 85 °C; note 1
−
300
150
hFE
IC = 25 mA; VCE = 1 V;
20
Tamb = 25 °C
fT
transition frequency
IC = 25 mA; VCE = 5 V;
−
2.8
−
GHz
f = 500 MHz; Tamb = 25 °C
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
−
−
0.4
15
−
−
pF
dB
GUM
maximum unilateral power gain IC = 15 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
F
noise figure
IC = 2 mA; VCE = 5 V; f = 800 MHz;
−
2.5
−
dB
Tamb = 25 °C; ZS = 60 Ω; bs = opt.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
25
V
−
15
V
open collector
−
2.5
50
V
−
mA
mW
Ptot
Tstg
Tj
up to Ts = 85 °C; note 1
−
300
−65
−
+150 °C
175 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
290
UNIT
K/W
Rth j-s
thermal resistance from junction up to Ts = 85 °C; note 1
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
hFE
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
IC = 25 mA; VCE = 1 V;
amb = 25 °C
MIN.
TYP. MAX. UNIT
−
−
50
nA
20
75
150
T
fT
transition frequency
collector capacitance
IC = 25 mA; VCE = 5 V;
f = 500 MHz; Tamb = 25 °C
−
2.8
0.7
−
−
GHz
pF
Cc
IE = 0; VCB = 10 V; f = 1 MHz;
−
Tamb = 25 °C
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 5 V; f = 1 MHz
−
−
−
1.25
0.4
15
−
−
−
pF
pF
dB
Cre
GUM
feedback capacitance
maximum unilateral power gain IC = 15 mA; VCE = 10 V;
(note 1)
f = 800 MHz; Tamb = 25 °C
F
noise figure
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C; ZS = 60 Ω; bs = opt.
−
−
2.5
−
−
dB
Vo
output voltage
note 2
150
mV
Notes
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB..
(1 – s11 2) (1 – s22
)
2
2. dim = −60 dB (DIN 45004B, para. 6,3: 3-tone); IC = 14 mA; VCE = 10 V; ZL = 75 Ω.
Vp = Vo; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
1.5 nF
1.5 nF
V
CC
V
BB
L3
10 kΩ
1 nF
L2
1 nF
75 Ω
output
L1
270 Ω
1 nF
75 Ω
DUT
input
3.3 pF
18 Ω
0.68 pF
MBB251
(1) L1 = L3 = 5 µH Ferroxcube choke.
(2) L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion MATV test circuit.
MBB374
MBB370
120
1.2
handbook, halfpage
handbook, halfpage
C
c
h
FE
(pF)
80
0.8
40
0.4
0
0
0
10
20
30
0
4
8
12
16
I
(mA)
C
V
(V)
CB
VCE = 1 V; Tamb = 25 °C.
IE = 0; f = 1 MHz; Tamb = 25 °C
Fig.3 DC current gain as function of collector
current.
Fig.4 Collector capacitance as a function of
collector-base voltage.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
MBB373
MBB371
4
40
handbook, halfpage
handbook, halfpage
G
UM
(dB)
f
T
30
(GHz)
3
20
10
2
0
10
2
4
3
0
10
20
30
10
10
f (MHz)
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
IC = 15 mA; VCE = 10 V; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
Fig.6 Maximum unilateral power gain as a
function of frequency.
MBB372
5
handbook, halfpage
F
(dB)
4
3
2
1
0
0
4
8
12
16
I
20
(mA)
C
VCE = 5 V; f = 800 MHz; Tamb = 25 °C; ZS = 60 Ω; bs = opt.
Fig.7 Minimum noise figure as a function of
collector current.
1995 Sep 12
5
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
1
0.5
2
0.2
5
2000 MHz
10
1200
1000
+ j
– j
1500
0.5
0.2
1
2
5
10
0
∞
800
500
10
40 MHz
5
0.2
200
100
2
0.5
MBB375
1
IC = 15 mA; VCE = 10 V;Tamb = 25 °C; Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
o
o
150
30
100
200
500
800
40 MHz
50
30
10
o
o
0
180
2000 MHz
o
o
30
150
o
o
60
120
o
MBB378
90
IC = 15 mA; VCE = 10 V;Tamb = 25 °C.
Fig.9 Common emitter forward transmission coefficient (S21).
6
1995 Sep 12
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
40 MHz
0
∞
– j
500
200
10
800
1500
1200
2000 MHz
1000
100
5
0.2
2
0.5
MBB376
1
IC = 15 mA; VCE = 10 V;Tamb = 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
2000 MHz
o
90
o
o
60
120
1500
1200
o
o
150
1000
800
30
500
200
1
40 MHz
1.0
0.6
0.2
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB377
90
IC = 15 mA; VCE = 10 V;Tamb = 25 °C; Zo = 50 Ω.
Fig.11 Common emitter output reflection coefficient (S22).
7
1995 Sep 12
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.12 SOT143.
1995 Sep 12
8
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
9
相关型号：
BFG17ATRL
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFG19
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
INFINEON
BFG193
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
INFINEON
BFG193E6327
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN
INFINEON
BFG194
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
INFINEON
BFG196
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
INFINEON
©2020 ICPDF网 联系我们和版权申明