BFG197/XR [NXP]
NPN 7 GHz wideband transistor; NPN 7 GHz的宽带晶体管
| 型号： | BFG197/XR |
| 厂家： | 
NXP |
| 描述： | NPN 7 GHz wideband transistor |
| 文件： | 总13页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
1995 Sep 13
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
FEATURES
PINNING
PIN
• High power gain
• Low noise figure
DESCRIPTION
BFG197 (Fig.1) Code: V5
4
3
• Gold metallization ensures
excellent reliability.
1
2
3
4
collector
base
emitter
emitter
DESCRIPTION
1
2
The BFG197 is a silicon NPN
BFG197/X (Fig.1) Code: V13
Top view
MSB014
transistor in a 4-pin, dual-emitter
plastic SOT143 envelope. It is
primarily intended for wideband
applications in the GHz range, such
as satellite TV systems and repeater
amplifiers in fibre-optic systems.
1
2
3
4
collector
emitter
base
Fig.1 SOT143.
emitter
BFG197A/XR (Fig.2) Code: V35
1
2
3
4
collector
emitter
base
3
4
emitter
2
1
Top view
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
open emitter
open base
DC value
−
−
−
−
−
−
−
−
−
−
−
V
10
100
350
−
V
mA
mW
pF
Ptot
Cre
total power dissipation
feedback capacitance
transition frequency
up to Ts = 75 °C; note 1
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 50 mA; VCE = 4 V; f = 2 GHz
0.85
7.5
16
fT
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
−
10
−
−
dB
dB
F
noise figure
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.7
Note
1. TS is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
open base
−
20
V
−
10
V
open collector
−
2.5
V
collector current
DC value, continuous
−
100
350
+150
175
mA
mW
°C
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature range
junction operating temperature
up to Ts = 75 °C; note 1
−
−65
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
290
UNIT
Rth j-s
from junction to soldering point; note 1
K/W
Note
1. TS is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP.
MAX. UNIT
ICBO
hFE
Cc
−
−
100
−
nA
IC = 50 mA; VCE = 5 V
40
−
110
1.5
3.3
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 50 mA; VCE = 4 V; f = 2 GHz
−
pF
Ce
−
−
pF
Cre
fT
−
0.85
7.5
16
−
pF
−
−
GHz
dB
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
−
IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
−
−
−
10
−
−
−
−
dB
dB
dB
dB
F
noise figure
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.7
2.3
−51
Γs = Γopt; IC = 50 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
d2
second order intermodulation
distortion
VCE = 6 V;Vo = 50 dBmV;
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
1995 Sep 13
3
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MBC983 - 2
MBB267
160
800
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
600
120
80
400
200
0
40
0
40
80
120
0
50
100
150
200
o
T ( C)
s
I
(mA)
C
VCE = 5 V.
Fig.4 DC current gain as a function of collector
current.
Fig.3 Power derating curve.
MCD155
MCD156
8
1.2
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
4
2
0
0.8
0.4
0
0
2
4
6
8
10
(V)
0
20
40
60
80
V
I
(mA)
CB
C
IC = ic = 0; f = 1 MHz.
VCE = 4 V; Tamb = 25 °C; f = 2 GHz.
Fig.6 Transition frequency as a function of
collector current.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
1995 Sep 13
4
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MCD157
MCD158
50
20
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
G
max
40
30
20
10
15
10
5
G
UM
G
UM
MSG
G
max
0
0
2
4
3
0
20
40
60
80
10
10
10
10
f (MHz)
I
(mA)
C
VCE = 4 V; f = 1 GHz.
VCE = 4 V; IC = 50 mA.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of frequency.
MCD159
MCD160
50
50
handbook, halfpage
gain
handbook, halfpage
gain
(dB)
(dB)
40
40
30
20
10
0
G
G
UM
UM
MSG
MSG
30
20
10
G
max
G
max
0
10
2
4
2
4
3
3
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 6 V; IC = 50 mA.
VCE = 8 V; IC = 30 mA.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
1995 Sep 13
5
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
MCD161
MCD162
4
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
F
(dB)
(dB)
3
2
1
3
2
1 GHz
I
= 50 mA
C
500 MHz
20 mA
1
10 mA
0
0
10
2
3
4
1
10
100
10
10
f (MHz)
I
(mA)
C
VCE = 6 V.
VCE = 6 V.
Fig.11 Minimum noise figure as a function of
collector current.
Fig.12 Minimum noise figure as a function of
frequency.
MBB266
MBB268
45
35
handbook, halfpage
handbook, halfpage
d
d
2
im
(dB)
(dB)
50
40
55
60
45
50
65
70
55
60
20
40
60
80
100
120
(mA)
20
40
60
80
100
120
(mA)
I
I
C
C
VCE = 8 V ; Vo = 700 mV; f(p+q−r) = 793.25 MHz; Tamb = 25 °C.
VCE = 8 V; Vo = 50 mV; f(p+q−r) = 810 MHz; Tamb = 25 °C.
Fig.13 Intermodulation distortion, typical values.
Fig.14 Second order intermodulation distortion,
typical values.
1995 Sep 13
6
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
0.5
2
MSG
23 dB
4 dB
3 dB
0.2
5
2 dB
OPT
10
+
j
*
F
= 1.7 dB
min
0.5
0
∞
0.2
1
2
5
10
–
j
10
stability
circle
5
0.2
2
0.5
MCD163
1
Zo = 50 Ω.
Maximum stable gain = 23 dB.
Fig.15 Noise circle figure.
1
0.5
2
5 dB
4 dB
0.2
5
3 dB
10
OPT
+ j
*
F
= 2.4 dB
0.5
min
0
∞
0.2
1
2
5
10
– j
*
10
15 dB
14 dB
5
0.2
G
max
15.8 dB
2
0.5
MCD164
1
Zo = 50 Ω.
Fig.16 Noise circle figure.
7
1995 Sep 13
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
0.5
2
0.2
6 dB
5 dB
5
10
+ j
– j
4 dB
0.2
0.5
1
2
5
10
0
∞
OPT
*
10
8 dB
F
= 3.5 dB
min
9 dB
5
0.2
*
2
0.5
G
max
9.7 dB
MCD165
1
Zo = 50 Ω.
Fig.17 Noise circle figure.
1
0.5
2
3 GHz
0.2
5
10
+
j
0.2
0.5
1
2
5
10
0
∞
–
j
10
5
0.2
40 MHz
2
0.5
MCD166
1
VCE = 6 V; IC = 50 mA.
Fig.18 Common emitter input reflection coefficient (S11).
8
1995 Sep 13
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
o
90
o
o
45
135
40 MHz
100
80
60
40
20
o
0
o
180
3 GHz
_
o
_
o
45
135
_
o
MCD167
90
VCE = 6 V; IC = 50 mA.
Fig.19 Common emitter forward transmission coefficient (S21).
o
90
o
o
45
3 GHz
135
0.20 0.16 0.12 0.08 0.04
o
o
0
40 MHz
180
_
o
_
o
45
135
MCD169
_
o
90
VCE = 6 V; IC = 50 mA.
Fig.20 Common emitter reverse transmission coefficient (S12).
9
1995 Sep 13
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
1
0.5
2
0.2
5
10
+
j
0.2
0.5
3 GHz
1
2
5
10
0
∞
–
j
10
5
0.2
40 MHz
2
0.5
MCD168
1
VCE = 6 V; IC = 50 mA.
Fig.21 Common emitter output reflection coefficient (S22).
1995 Sep 13
10
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
SPICE parameters for BFQ195 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
C
1
IS
1.972
150.0
990.8
54.72
30.00
47.82
1.580
165.4
993.9
2.351
9.967
3.510
1.124
5.000
1.000
5.000
368.1
937.2
0.000
1.110
3.000
3.388
600.0
302.9
11.06
30.02
1.649
401.9
0.000
1.190
160.1
89.44
130.0
2.148
0.000
750.0
0.000
785.9
fA
−
handbook, halfpage
cb
2
BF
3
NF
m
L
B
L1
L2
4
VAF
IKF
ISE
NE
V
B
B'
C'
C
5
A
E'
6
fA
−
C
C
be
ce
7
L
E
8
BR
−
MBC964
9
NR
m
L3
10
VAR
IKR
ISC
NC
V
11
A
E
12
aA
−
13
14
RB
Ω
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/Fc).
Fc = scaling frequency = 1000 MHz.
15
IRB
RBM
RE
µA
Ω
16
17
mΩ
mΩ
−
Fig.22 Package equivalent circuit SOT143;
SOT143R.
18
RC
19 (note 1)
XTB
EG
20 (note 1)
EV
−
21 (note 1)
XTI
CJE
VJE
MJE
TF
List of components (see Fig.22)
22
pF
mV
m
DESIGNATION
Cbe
VALUE
UNIT
23
84
fF
24
Ccb
Cce
L1
L2
L3
LB
17
fF
25
ps
−
191
fF
26
XTF
VTF
ITF
27
V
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
28
mA
deg
pF
mV
m
29
PTF
CJC
VJC
MJC
XCJC
TR
30
31
LE
32
33
m
34
ns
F
35 (note 1)
36 (note 1)
37 (note 1)
38
CJS
VJS
MJS
FC
mV
−
m
Note
1. These parameters have not been extracted,
the default values are shown.
1995 Sep 13
11
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
PACKAGE OUTLINES
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A
B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.23 SOT143.
3.0
2.8
B
0.150
0.090
1.9
A
M
0.2
0.40
0.25
A
3
4
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
2
1
1.1
max
0.48
0.38
0.88
0.78
o
MBC844
30
max
1.7
B
0.1 M
TOP VIEW
Dimensions in mm.
Fig.24 SOT143R.
1995 Sep 13
12
Philips Semiconductors
Product specification
BFG197; BFG197/X;
BFG197/XR
NPN 7 GHz wideband transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 13
13
相关型号：
BFG197TRL13
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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