BFG21WT/R [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal;
| 型号： | BFG21WT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG21W
UHF power transistor
Product specification
1998 Jul 06
Supersedes data of 1997 Nov 21
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
FEATURES
PINNING
High power gain
PIN
1, 3
2
DESCRIPTION
High efficiency
emitter
1.9 GHz operating area
Linear and non-linear operation.
base
4
collector
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
3
4
handbook, halfpage
Driver for DCS1800, 1900.
DESCRIPTION
2
1
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
Top view
MSB842
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts 60 C in a common emitter test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
PL
(dBm)
Gp
(dB)
C
(%)
Pulsed class-AB; < 1 : 2; tp = 5 ms
1.9
3.6
26
10
typ.55
1998 Jul 06
2
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
15
UNIT
VCBO
VCEO
VEBO
IC
V
V
V
collector-emitter voltage
emitter-base voltage
open base
4.5
open collector
1
collector current (DC)
total power dissipation
storage temperature
500
600
+150
150
mA
mW
C
Ptot
Ts 60 C; note 1
Tstg
Tj
65
operating junction temperature
C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to
soldering point
Ts 60 C; Ptot = 600 mW; note 1
150
Note
1. Ts is the temperature at the soldering point of the emitter pins.
MGM219
3
10
R
th
(K/W)
δ =
1
0.75
0.5
2
10
0.33
0.2
0.1
t
10
p
0.05
P
δ =
T
0.02
0.01
0
t
t
p
T
1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
t
(s)
p
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06
3
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
15
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 0.1 mA
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA
4.5
10
1
V
V(BR)CER collector-emitter breakdown voltage RBE < 1 k, IC = 10 mA
V
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.1 mA
VCE = 5 V; VBE = 0
V
ICES
hFE
Cc
collector leakage current
DC current gain
10
100
3
A
IC = 200 mA; VCE = 2 V
40
collector capacitance
feedback capacitance
transition frequency
IE = ie= 0; VCB = 3 V; f = 1 MHz
IC = 0; VCB = 3.6 V; f = 1 MHz
pF
Cre
fT
1.5
pF
IC = 200 mA; VCE = 3.6 V;
f = 700 MHz
18
GHz
APPLICATION INFORMATION
RF performance at Ts 60 C in a common emitter test circuit (see Figs 4 and 5).
f
VCE
(V)
ICQ
(mA)
PL
(dBm)
Gp
(dB)
C
(%)
MODE OF OPERATION
(GHz)
Pulsed; class-AB; < 1 : 2; tp = 5 ms
1.9
3.6
1
26
10
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions: = 1 : 2;
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V.
MGM220
16
80
handbook, halfpage
η
(%)
G
p
(dB)
C
G
p
12
60
8
4
40
20
0
η
C
0
5
10
15
20
25
P
30
(dBm)
L
Pulsed, class-AB operation; < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
1998 Jul 06
4
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
V
V
S
C
R1
L5
R3
R2
C7
C6
TR1
C3
L4
L1
L3
C5
RF output
50 Ω
L2
C1
RF input
50 Ω
DUT
C4
C2
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C5
C2
multilayer ceramic chip capacitor; note 1 24 pF
multilayer ceramic chip capacitor; note 1 3.3 pF
multilayer ceramic chip capacitor, note 1 15 pF
multilayer ceramic chip capacitor; note 1 2.4 pF
multilayer ceramic chip capacitor; note 1 1 nF
C3, C6
C4
C7
L1, L4
L2
stripline; note 2
100
50
50
18 0.2 mm
3.2 0.8 mm
4.6 0.8 mm
stripline; note 2
L3
stripline; note 2
L5
Grade 4S2 Ferroxcube chip bead
metal film resistor
metal film resistor
NPN transistor
4330 030 36300
9335 895 20215
R1
220 ; 0.4 W
10 ; 0.4 W
BC817
R2, R3
TR1
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15,
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
1998 Jul 06
5
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
45
35
V
V
S
C
R1
TR1
L5
R2
C3
R3
C7
C6
L1
L2
L4
C2
C1
C5
L3
DUT
C4
input
output
MGM222
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
1998 Jul 06
6
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
MGM224
MGM223
16
L
(Ω)
12
10
handbook, halfpage
handbook, halfpage
Z
Z
i
R
L
(Ω)
r
i
8
6
8
4
x
i
4
2
0
0
X
L
−4
−8
1.8
1.85
1.9
1.95
2.0
1.8
1.85
1.9
1.95
2.0
f (GHz)
f (GHz)
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C.
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C.
Fig.6 Input impedance as function of frequency
(series components); typical values.
Fig.7 Load impedance as a function of frequency
(series components); typical values.
1998 Jul 06
7
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
w
M
B
b
b
1
p
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-05-21
06-03-16
SOT343R
1998 Jul 06
8
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1998 Jul 06
9
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1998 Jul 06
10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/03/pp11
Date of release: 1998 Jul 06
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