BFG310W [NXP]
NPN 14 GHz wideband transistor; NPN 14 GHz宽带晶体管
| 型号： | BFG310W |
| 厂家： | 
NXP |
| 描述： | NPN 14 GHz wideband transistor |
| 文件： | 总12页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability
1.3 Applications
■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
◆ analog and digital cellular telephones
◆ cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
◆ radar detectors
◆ pagers
◆ Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
open emitter
Min
Typ
Max Unit
VCBO
VCEO
IC
collector-base voltage
-
-
15
6
V
collector-emitter voltage open base
collector current (DC)
-
-
V
-
-
10
60
200
mA
mW
[1]
Ptot
total power dissipation
DC current gain
Tsp ≤ 145 °C
-
-
hFE
IC = 5 mA; VCE = 3 V;
60
100
Tj = 25 °C
CCBS
fT
collector-base
capacitance
VCB = 5 V; f = 1 MHz;
emitter grounded
-
-
0.17 0.3
14
pF
transition frequency
IC = 5 mA; VCE = 3 V;
-
GHz
f = 1 GHz; Tamb = 25 °C
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
Table 1:
Quick reference data …continued
Conditions
Symbol Parameter
Min
Typ
Max Unit
MSG
maximum stable gain
IC = 5 mA; VCE = 3 V;
-
18
-
dB
f = 1.8 GHz; Tamb = 25 °C
2
|s21
|
insertion power gain
IC = 5 mA; VCE = 3 V;
f = 1.8 GHz; Tamb = 25 °C;
ZS = ZL = 50 Ω
-
-
14
1
-
dB
NF
noise figure
Γs = Γopt; IC = 1 mA;
-
dB
VCE = 3 V; f = 2 GHz
[1] Tsp is the temperature at the soldering point of the collector pin.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
collector
emitter
Simplified outline
Symbol
3
4
1
2
3
base
3
4
emitter
2, 4
sym086
2
1
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BFG310W/XR
-
plastic surface mounted package; reverse pinning;
4 leads
SOT343R
4. Marking
Table 4:
Marking codes
Type number
Marking code[1]
BFG310W/XR
A7*
[1] * = p: made in Hong Kong.
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
2 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
15
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
-
-
6
V
open collector
-
2
V
-
10
mA
mW
°C
°C
[1]
Ptot
Tsp ≤ 145 °C
-
60
Tstg
−65
+175
175
Tj
-
[1] Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
sp ≤ 145 °C
Typ
Unit
[1]
Rth(j-sp) thermal resistance from junction to solder point
T
530
K/W
[1] Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
-
Max Unit
ICBO
hFE
collector-base cut-off current
DC current gain
IE = 0 A; VCB = 6 V
IC = 5 mA; VCE = 3 V
-
15
200
0.3
-
nA
60
-
100
0.17
0.22
0.16
14
CCBS
CCES
CEBS
fT
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
VCB = 5 V; f = 1 MHz; emitter grounded
VCE = 5 V; f = 1 MHz; base grounded
VEB = 0.5 V; f = 1 MHz; collector grounded
IC = 5 mA; VCE = 3 V; f = 1 GHz;
pF
-
pF
-
-
pF
-
-
GHz
T
amb = 25 °C
IC = 5 mA; VCE = 3 V; f = 1.8 GHz;
amb = 25 °C
MSG
maximum stable gain
insertion power gain
-
18
-
dB
T
2
|s21
|
IC = 5 mA; VCE = 3 V; Tamb = 25 °C;
ZS = ZL = 50 Ω
f = 1.8 GHz
-
-
-
-
14
11
1
-
-
-
-
dB
f = 3 GHz
dB
NF
noise figure
Γs = Γopt; IC = 1 mA; VCE = 3 V; f = 2 GHz
dB
PL(1dB)
output power at 1 dB gain
compression
IC = 5 mA; VCE = 3 V; f = 1.8 GHz;
1.8
dBm
T
amb = 25 °C; ZS = ZL = 50 Ω
IP3
third order intercept point
IC = 5 mA; VCE = 3 V; f = 1.8 GHz;
-
8.5
-
dBm
T
amb = 25 °C; ZS = ZL = 50 Ω
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
3 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
001aac177
001aac178
70
10
P
(mW)
tot
I
C
I
= 120 µA
100 µA
80 µA
B
(mA)
60
8
6
4
2
0
50
40
30
20
60 µA
40 µA
20 µA
10
0
0
50
100
150
200
0
1
2
3
4
5
CE
6
T
(°C)
V
(V)
sp
Fig 1. Power derating curve
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac179
001aac180
0.20
40
C
(pF)
CBS
G
(dB)
0.19
MSG
30
0.18
0.17
0.16
0.15
2
s
21
20
10
0
2
3
4
0
1
2
3
4
5
10
10
10
10
V
(V)
f (MHz)
CB
IC = 0 mA; f = 1 MHz.
IC = 5 mA; VCE = 3 V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
4 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
0.6
0.4
+5
0.2
0
0.2
0.5
1
2
5
10
0°
0
180°
3 GHz
40 MHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aac181
−90°
VCE = 3 V; IC = 5 mA; Zo = 50 Ω.
Fig 5. Common emitter input reflection coefficient (s11); typical values
90°
135°
45°
3 GHz
20
16 12
8
4
0
180°
0°
40 MHz
−135°
−45°
001aac182
−90°
VCE = 3 V; IC = 5 mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
5 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
90°
135°
45°
3 GHz
0.5
0.4
0.3
0.2
0.1
0
180°
0°
40 MHz
−135°
−45°
001aac183
−90°
VCE = 3 V; IC = 5 mA.
Fig 7. Common emitter reverse transmission coefficient (s12); typical values
90°
1.0
+1
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+0.5
+2
+5
0
0.2
0.5
1
2
5
10
0°
180°
40 MHz
−5
−0.2
3 GHz
−2
−0.5
−135°
−45°
−1
1.0
001aac184
−90°
VCE = 3 V; IC = 5 mA; Zo = 50 Ω.
Fig 8. Common emitter output reflection coefficient (s22); typical values
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
6 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
8. Application information
Table 8:
SPICE parameters of the BFG310W DIE
Sequence
1
Parameter
IS
Value
16.17
210
1
Unit
aA
-
2
BF
3
NF
-
4
VAF
IKF
50
V
5
59.83
1.726
2.114
6
mA
fA
-
6
ISE
7
NE
8
BR
-
9
NR
1
-
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
VAR
IKR
ISC
NC
2.3
10
V
A
0
aA
-
1.5
3.6
2.1
1.6
115.6
866.3
0.285
68.18
601
0.123
1
RB
Ω
Ω
Ω
fF
mV
-
RE
RC
CJE
VJE
MJE
CJC
VJC
MJC
XCJC
FC
fF
mV
-
-
0.7
8.3
10
-
TF
ps
-
XTF
VTF
ITF
1000
150
0
V
mA
deg
ns
-
PTF
TR
0
KF
0
AF
1
-
TNOM
EG
25
°C
eV
-
1.014
0
XTB
XTI
8
-
Q1.AREA
1
-
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
7 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
L
L
C_lead
C_wire
C
CB
C_base_pad
BJT1
C_emitter_pad
C
CE
L
L
B_wire
B_lead
CHIP
C
BE
L
L
E_wire
E_lead
001aac166
Fig 9. Package equivalent circuit of SOT343R
Table 9: List of components; see Figure 9
Designation
CCB
Value
2
Unit
fF
CBE
80
fF
CCE
80
fF
C_base_pad
C_emitter_pad
LC_wire
67
fF
142
0.767
0.842
0.212
0.28
0.281
0.1
fF
nH
nH
nH
nH
nH
nH
LB_wire
LE_wire
LC_lead
LB_lead
LE_lead
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
8 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
9. Package outline
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343R
97-05-21
Fig 10. Package outline SOT343R
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
9 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
20050202 Product data sheet
Change notice Doc. number
9397 750 14245
Supersedes
BFG310W_XR_1
-
-
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
10 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
11 of 12
BFG310W/XR
Philips Semiconductors
NPN 14 GHz wideband transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 February 2005
Document number: 9397 750 14245
Published in The Netherlands
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