BFG410W,115 [NXP]
BFG410W - NPN 22 GHz wideband transistor;
| 型号： | BFG410W,115 |
| 厂家： | 
NXP |
| 描述： | BFG410W - NPN 22 GHz wideband transistor 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG410W
NPN 22 GHz wideband transistor
Product specification
1998 Mar 11
Supersedes data of 1997 Oct 29
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
FEATURES
PINNING
PIN
Very high power gain
Low noise figure
DESCRIPTION
1
2
3
4
emitter
base
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
emitter
collector
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
3
2
4
handbook, halfpage
Radar detectors
Pagers
1
Satellite television tuners (SATV)
High frequency oscillators.
Top view
MSB842
DESCRIPTION
Marking code: P4.
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
open emitter
10
4.5
12
54
120
V
collector-emitter voltage open base
collector current (DC)
V
10
mA
mW
Ptot
hFE
Cre
fT
total power dissipation
DC current gain
Ts 110 C
IC = 10 mA; VCE = 2 V; Tj = 25 C
50
80
45
22
21
1.2
feedback capacitance
transition frequency
maximum power gain
noise figure
IC = 0; VCB = 2 V; f = 1 MHz
fF
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C
GHz
dB
dB
Gmax
F
IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11
2
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
10
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
V
V
V
open base
4.5
1
open collector
collector current (DC)
total power dissipation
storage temperature
12
mA
mW
C
Ptot
Ts 110 C; note 1; see Fig.2
54
Tstg
Tj
65
+150
150
operating junction temperature
C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
750
K/W
MGD960
60
handbook, halfpage
P
tot
(mW)
40
20
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
1998 Mar 11
3
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
10
TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0
V
V
V(BR)CEO collector-emitter breakdown
voltage
IC = 1 mA; IB = 0
4.5
V(BR)EBO emitter-base breakdown voltage
IE = 2.5 A; IC = 0
1
V
ICBO
hFE
Cc
collector-base leakage current
DC current gain
IE = 0; VCB = 4.5 V
15
120
nA
IC = 10 mA; VCE = 2 V; see Fig.3
IE = ie = 0; VCB = 2 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
50
80
220
400
45
collector capacitance
emitter capacitance
fF
fF
fF
Ce
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
fT
transition frequency
maximum power gain; note 1
insertion power gain
noise figure
IC = 10 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.5
22
21
18
0.9
1.2
5
GHz
dB
Gmax
IC = 10 mA; VCE = 2 V; f = 2 GHz;
T
amb = 25 C; see Figs 7 and 8
IC = 10 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.8
dB
2
S21
F
IC = 1 mA; VCE = 2 V;
f = 900 MHz; S = opt; see Fig.13
dB
IC = 1 mA; VCE = 2 V; f = 2 GHz;
S = opt; see Fig.13
dB
PL1
ITO
output power at 1 dB gain
compression
IC = 10 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
dBm
dBm
third order intercept point
IC = 10 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2
15
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
MGG717
MGG718
120
100
handbook, halfpage
handbook, halfpage
C
h
re
FE
(fF)
100
80
80
(1)
(2)
60
40
20
(3)
60
40
20
0
0
0
0
4
8
12
16
1
2
3
4
5
(V)
I
(mA)
C
V
CB
(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGG720
MGG719
25
30
handbook, halfpage
handbook, halfpage
f
T
(GHz)
MSG
(dB)
20
20
10
0
15
10
5
0
2
1
10
10
0
4
8
12
16
I
(mA)
C
I
(mA)
C
VCE = 2 V; f = 900 MHz.
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
Fig.5 Transition frequency as a function of
collector current; typical values.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
1998 Mar 11
5
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
MGG721
MGG722
30
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
40
MSG
21
G
max
20
10
0
30
S
20
10
0
2
3
4
0
4
8
12
16
10
10
10
10
f (MHz)
I
(mA)
C
VCE = 2 V; f = 2 GHz.
IC = 10 mA; VCE = 2 V.
Fig.7 Gain as a function of collector current;
typical values.
Fig.8 Gain as a function of frequency;
typical values.
90°
1.0
1
0.8
135°
45°
2
0.5
0.6
0.4
0.2
5
0.2
0.2
0.5
1
2
5
180°
0°
0
0
40 MHz
3 GHz
5
0.2
0.5
2
−45°
−135°
1
1.0
−90°
MGG724
IC = 10 mA; VCE = 2 V; Zo = 50
Fig.9 Common emitter input reflection coefficient (S11); typical values.
6
1998 Mar 11
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
90°
135°
45°
3 GHz
40 MHz
180°
0°
50
40
30
20
10
−135°
−45°
MGG725
−90°
IC = 10 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
90°
135°
45°
3 GHz
0.1 0.08 0.06 0.04 0.02
180°
0°
40 MHz
−135°
−45°
MGG726
−90°
IC = 10 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
7
1998 Mar 11
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
40 MHz
0.2
0.5
1
2
5
180°
0°
0
5
0.2
3 GHz
0.5
2
−45°
−135°
1
1.0
−90°
MGG727
IC = 10 mA; VCE = 2 V; Zo = 50
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
CE = 2 V; typical values.
V
MGG723
f
IC
(mA)
Fmin
(dB)
rn
()
3
mag
0.73
angle
11.2
handbook, halfpage
(MHz)
F
min
(dB)
900
1
2
4
6
8
0.8
0.56
0.9
1.1
1.3
1.5
1.7
1.9
2.1
1.2
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.58
0.40
0.28
0.20
0.14
0.06
0.05
0.64
0.50
0.34
0.25
0.17
0.12
0.05
0.03
10.1
10.1
11.0
8.0
0.43
0.33
0.30
0.30
0.27
0.25
0.26
0.57
0.44
0.37
0.34
0.35
0.34
0.35
0.34
2
(1)
(2)
10
12
14
1
10.5
10.1
14.2
35.7
35.8
34.4
33.7
34.5
35.8
38.0
44.8
1
2000
2
0
0
4
8
12
16
4
I
(mA)
C
6
(1) f = 2 GHz; VCE = 2 V.
8
(2) f = 900 MHz; VCE = 2 V.
10
12
14
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No. PARAMETER VALUE
UNIT
SEQUENCE No. PARAMETER VALUE
UNIT
1
IS
19.42
145.0
0.993
31.12
125.0
123.6
3.000
11.37
0.985
1.874
50.00
199.6
1.546
35.00
0.000
15.00
432.0
4.324
1.500
1.110
3.000
128.0
900.0
0.346
4.122
68.20
2.004
0.627
0.000
56.68
556.9
0.207
0.500
0.000
274.8
418.3
0.239
0.550
aA
39 (2)(3)
40 (2)
41 (3)
Cbp
145
25
fF
2
BF
Rsb1
Rsb2
3
NF
19
4
VAF
IKF
ISE
NE
V
Notes
5
mA
fA
1. These parameters have not been extracted, the
default values are shown.
6
7
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B and E.
8
BR
3. Bonding pad capacity Cbp in series with substrate
9
NR
resistance Rsb2 between C and E.
10
11
VAR
IKR
ISC
NC
V
mA
aA
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34 (1)
35 (1)
36 (1)
37 (1)
38
C
handbook, halfpage
cb
RB
IRB
RBM
RE
A
L1
L2
B
B'
C'
C
E'
m
C
C
be
ce
RC
XTB
EG
MGD956
eV
L3
XTI
CJE
VJE
MJE
TF
fF
mV
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc)
fc = scaling frequency = 1 GHz.
ps
XTF
VTF
ITF
Fig.14 Package equivalent circuit SOT343R2.
V
A
List of components (see Fig.14)
PTF
CJC
VJC
MJC
XCJC
TR
deg
fF
mV
DESIGNATION
VALUE
UNIT
Cbe
Ccb
Cce
L1
80
2
fF
fF
80
fF
1.1
nH
nH
nH
ns
fF
mV
L2
1.1
CJS
VJS
MJS
FC
L3 (note 1)
0.25
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
w
M
B
b
b
1
p
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-05-21
06-03-16
SOT343R
1998 Mar 11
10
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
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Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1998 Mar 11
11
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors’ product specifications.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1998 Mar 11
12
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/04/pp13
Date of release: 1998 Mar 11
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