BFG591,115 [NXP]
BFG591 - NPN 7 GHz wideband transistor SC-73 4-Pin;
| 型号： | BFG591,115 |
| 厂家： | 
NXP |
| 描述： | BFG591 - NPN 7 GHz wideband transistor SC-73 4-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
Product specification
1995 Sep 04
Supersedes data of November 1992
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
FEATURES
DESCRIPTION
page
4
High power gain
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
Low noise figure
High transition frequency
PINNING
Gold metallization ensures
excellent reliability.
PIN
1
DESCRIPTION
emitter
APPLICATIONS
2
base
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
1
2
3
3
emitter
collector
MSB002 - 1
Top view
4
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
V
15
200
2
V
mA
W
Ptot
hFE
Cre
up to Ts = 80 C; note 1
IC = 70 mA; VCE = 8 V
60
90
0.7
7
250
feedback capacitance
transition frequency
IC = Ic = 0; VCE = 12 V; f = 1 MHz
IC = 70 mA; VCE = 12 V; f = 1 GHz
pF
fT
GHz
dB
GUM
maximum unilateral power IC = 70 mA; VCE = 12 V;
13
gain
f = 900 MHz; Tamb = 25 C
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 C
12
dB
2
s21
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
2
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open base
15
V
open collector
3
V
200
2
mA
W
C
C
Ptot
up to Ts = 80 C; note 1
Tstg
Tj
65
+150
150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
35
UNIT
Rth j-s
thermal resistance from junction to
soldering point
note 1
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
3
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX. UNIT
IC = 0.1 mA; IE = 0
V
15
3
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
IE = 0; VCB = 10 V
IC = 70 mA; VCE = 8 V
V
ICBO
hFE
Cre
collector-base leakage current
DC current gain
100
250
nA
60
90
0.7
feedback capacitance
IB = Ib = 0; VCE = 12 V;
f = 1 MHz
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
7
GHz
dB
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 C
13
7.5
12
700
IC = 70 mA; VCE = 12 V;
f = 2 GHz; Tamb = 25 C
dB
insertion power gain
output voltage
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 C
dB
2
s21
Vo
note 2
mV
Notes
1. UM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
2
s21
--------------------------------------------------------
G
dB.
1 – s11 21 – s22 2
2. dim = 60 dB (DIN45004B);
Vp = Vo; Vq = Vo 6 dB; Vr = Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.
1995 Sep 04
4
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MRA749
MGC791
250
handbook, halfpage
3.0
tot
P
h
FE
(W)
2.5
200
150
100
2.0
1.5
1.0
0.5
50
0
0
−2
−1
2
0
50
100
150
200
10
10
1
10
10
o
T
( C)
I
(mA)
s
C
VCE = 12 V.
Fig.3 DC current gain as a function of collector
current, typical values.
Fig.2 Power derating curve.
MGC792
MGC793
1.2
8
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
0.8
4
2
0.4
0
0
2
0
4
8
12
16
1
10
10
V
(V)
I
(mA)
CB
C
IC = 0; f = 1 MHz.
f = 1 GHz; VCE = 12 V.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5 Transition frequency as a function of
collector current, typical values.
1995 Sep 04
5
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC795
MGC794
25
10
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
15
8
6
4
2
G
UM
G
max
G
UM
10
5
0
0
0
0
40
80
120
40
80
120
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 12 V.
f = 2 GHz; VCE = 12 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MGC796
50
handbook, halfpage
gain
(dB)
G
UM
40
30
20
10
0
MSG
G
max
2
3
4
10
10
10
10
f (MHz)
IC = 70 mA; VCE = 12 V.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 04
6
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC797
MGC798
−20
−20
handbook, halfpage
handbook, halfpage
d
d
im
2
(dB)
(dB)
−30
−30
−40
−50
−60
−70
−40
−50
−60
−70
0
40
80
120
0
40
80
120
I
(mA)
I
(mA)
C
C
VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz.
VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function
of collector current; typical values.
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
1995 Sep 04
7
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
3 GHz
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC799
1.0
o
90
VCE = 12 V; IC = 70 mA; Zo = 50
Fig.11 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
3 GHz
o
o
180
0
50
40
30
20
10
o
o
135
45
o
MGC800
90
VCE = 12 V; IC = 70 mA.
Fig.12 Common emitter forward transmission coefficient (s21); typical values.
8
1995 Sep 04
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
o
90
o
o
135
45
3 GHz
0.5
0.4
0.3
0.2
0.1
40 MHz
o
o
180
0
o
o
135
45
o
MGC801
90
VCE = 12 V; IC = 70 mA.
Fig.13 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC802
1.0
o
90
VCE = 12 V; IC = 70 mA; Zo = 50
Fig.14 Common emitter output reflection coefficient (s22); typical values.
9
1995 Sep 04
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
SPICE parameters for the BFG591 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
1
IS
1.341
123.5
.988
fA
C
handbook, halfpage
cb
2
BF
3
NF
m
V
4
VAF
IKF
ISE
NE
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
L
B
L1
L2
C
B
B'
C'
5
A
6
fA
E'
C
C
be
ce
7
L
E
8
BR
MBC964
9
NR
10
11
VAR
IKR
ISC
NC
V
L3
mA
aA
E
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
36 (1)
37 (1)
38
RB
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc);
fc = scaling frequency = 1 GHz.
IRB
RBM
RE
1.000
5.00
A
Fig.15 Package equivalent circuit SOT223.
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
RC
m
XTB
EG
List of components (see Fig.15)
EV
XTI
CJE
VJE
MJE
TF
DESIGNATION
VALUE
182
UNIT
pF
mV
m
ps
Cbe
Ccb
Cce
L1
fF
16
fF
249
fF
0.025
1.19
0.60
1.50
0.50
nH
nH
nH
nH
nH
XTF
VTF
ITF
L2
V
L3
A
LB
PTF
CJC
VJC
MJC
XCJ
TR
deg
pF
mV
m
m
ns
F
LE
CJS
VJS
MJS
FC
mV
m
Note
1. These parameters have not been extracted, the
default values are shown.
1995 Sep 04
10
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
1995 Sep 04
11
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
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DISCLAIMERS
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However, NXP Semiconductors does not give any
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shall have no liability for the consequences of use of such
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warranty that such applications will be suitable for the
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responsibility to determine whether the NXP
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for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1995 Sep 04
12
NXP Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
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avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
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Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
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or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
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specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
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product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors’ product specifications.
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1995 Sep 04
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/02/pp14
Date of release: 1995 Sep 04
相关型号：
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