BFG92A/XT/R [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal;
| 型号： | BFG92A/XT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal 晶体 晶体管 |
| 文件： | 总13页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG92A/X
NPN 5 GHz wideband transistor
Rev. 06 — 12 March 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
FEATURES
DESCRIPTION
• High power gain
• Low noise figure
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
4
3
• Gold metallization ensures
excellent reliability.
PINNING
1
2
APPLICATIONS
PIN
1
DESCRIPTION
collector
Top view
MSB014
Wideband applications in the UHF
and microwave range.
Marking code: %MW.
2
emitter
base
3
Fig.1 SOT143B.
4
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
−
−
−
−
−
−
−
−
−
V
15
25
400
−
V
mA
mW
pF
Ptot
Cre
Ts ≤ 60 °C
IC = ic = 0; VCB = 10 V; f = 1 MHz
0.35
5
fT
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
−
GHz
dB
GUM
maximum unilateral power IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
−
16
−
gain
f = 1 GHz
IC = 15 mA; VCE = 10 V; Tamb = 25 °C;
f = 2 GHz
−
−
11
2
−
−
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
Rev. 06 - 12 March 2008
2 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
open base
15
open collector
2
collector current (DC)
total power dissipation
storage temperature range
junction temperature
25
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 60 °C; note 1
400
150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cc
−
−
50
135
−
nA
IC = 15 mA; VCE = 10 V
65
−
90
0.6
0.9
0.35
5
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 10 V; f = 1 MHz
IC = ic = 0; VCB = 10 V; f = 1 MHz
pF
Ce
−
−
pF
Cre
fT
−
−
pF
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
−
GHz
dB
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
−
−
−
−
16
−
IC = 15 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
11
2
−
−
−
dB
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 10 V;
Tamb = 25 °C; f = 2 GHz
3
Note
2
S21
--------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
(1 – S11 2) (1 – S22
)
2
Rev. 06 - 12 March 2008
3 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MBB963 - 1
MCD074
800
120
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
600
80
40
400
200
0
0
0
0
50
100
150
200
10
20
30
I
(mA)
C
o
T ( C)
s
VCE = 10 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MBB275
MCD075
6
0.6
handbook, halfpage
handbook, halfpage
f
C
T
re
(GHz)
(pF)
4
0.4
2
0
0.2
0
0
0
10
20
30
6
12
18
24
I
(mA)
C
V
(V)
CB
VCE = 10 V; Tamb = 25 °C; f = 500 MHz.
IC = ic = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
Rev. 06 - 12 March 2008
4 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD077
MCD078
30
30
handbook, halfpage
handbook, halfpage
MSG
gain
(dB)
gain
(dB)
MSG
G
UM
20
10
0
20
10
G
UM
0
0
0
5
10
20
I
15
25
(mA)
5
10
15
20
25
(mA)
C
I
C
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MCD079
MCD080
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
40
gain
(dB)
G
UM
40
G
UM
MSG
30
30
MSG
20
20
G
max
G
max
10
0
10
0
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f
(MHz)
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8 Gain as a function of frequency; typical
values.
Fig.9 Gain as a function of frequency; typical
values.
Rev. 06 - 12 March 2008
5 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MCD081
MCD082
4
4
handbook, halfpage
handbook, halfpage
I
= 15 mA
f = 2 GHz
C
F
F
(dB)
(dB)
10 mA
5 mA
3
3
2
1
0
1 GHz
500 MHz
2
1
0
2
1
10
10
2
3
4
10
10
10
I
(mA)
C
f (MHz)
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
stability circle
1
0.5
2
0.2
5
*
OPT
10
+
j
F
= 1.6 dB
2
min
0
∞
0.2
0.5
1
5
10
– j
MSG
23.9 dB
10
2 dB
5
0.2
3 dB
4 dB
2
0.5
MCD083
1
Zo = 50 Ω.
Maximum stable gain = 23.9 dB.
Fig.12 Common emitter noise figure circles; typical values.
Rev. 06 - 12 March 2008
6 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
0.5
2
stability circle
0.2
5
OPT
10
*
+ j
F
= 2.1 dB
min
0
∞
MSG
19.9 dB
0.2
1
0.5
2
5
10
– j
10
2.5 dB
3 dB
4 dB
5
0.2
2
0.5
MCD084
1
Zo = 50 Ω.
Maximum stable gain = 19.9 dB.
Fig.13 Common emitter noise figure circles; typical values.
1
0.5
2
5 dB
4 dB
0.2
5
3.5 dB
OPT
10
+ j
– j
*
F
= 3 dB
min
0
∞
0.2
1
0.5
2
5
10
G
max
10
*
12.5 dB
12 dB
5
0.2
10 dB
2
0.5
MCD085
1
Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 06 - 12 March 2008
7 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
1
0.5
2
3 GHz
0.2
5
10
+
j
0.2
0.5
1
2
5
10
0
∞
– j
40 MHz
10
5
0.2
2
0.5
MCD086
1
VCE = 10 V; IC = 15 mA.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
45
135
40 MHz
30
o
o
0
180
50
40
20
10
3 GHz
_
o
_
o
45
135
_
o
MCD072
90
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
Rev. 06 - 12 March 2008
8 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
o
90
o
o
45
135
3 GHz
40
MHz
o
o
0
180
0.04 0.08 0.12 0.16 0.20
_
o
_
o
45
135
_
o
MCD071
90
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
40 MHz
10
5
0.2
3 GHz
2
0.5
MCD073
1
VCE = 10 V; IC = 15 mA.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
Rev. 06 - 12 March 2008
9 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
SPICE parameters for BFR90A/X die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (note 1)
37 (note 1)
38
VJS
MJS
FC
750.0
0.000
850.0
1
IS
411.8
102.6
997.2
62.67
3.200
4.010
1.577
18.10
996.2
3.369
1.281
279.9
1.075
10.00
1.000
10.00
1.164
2.320
0.000
1.110
3.000
890.5
600.0
258.5
15.49
39.14
2.152
213.7
0.000
546.5
380.8
202.9
150.0
5.618
0.000
aA
−
−
2
BF
m
3
NF
m
V
Note
4
VAF
IKF
ISE
NE
1. These parameters have not been extracted,
the default values are shown.
5
A
6
fA
−
7
C
cb
handbook, halfpage
8
BR
−
9
NR
m
V
10
VAR
IKR
ISC
NC
L
B
L1
L2
11
A
B
B'
C'
C
12
aA
−
E'
C
C
be
ce
13
14
RB
Ω
L
E
15
IRB
RBM
RE
µA
Ω
MBC964
16
L3
17
Ω
18
RC
Ω
E
19 (note 1)
XTB
EG
−
QLB = 50; QLE = 50.
QLB,E (f) = QLB,E √ (f/fc).
fc = scaling frequency = 100 MHz.
20 (note 1)
eV
−
21 (note 1)
XTI
CJE
VJE
MJE
TF
22
fF
mV
m
ps
−
Fig.19 Package equivalent circuit SOT143B.
23
24
25
List of components (see Fig.19)
26
XTF
VTF
ITF
DESIGNATION
Cbe
VALUE
UNIT
27
V
28
mA
deg
fF
mV
m
m
ns
F
84
fF
29
PTF
CJC
VJC
MJC
XCJC
TR
Ccb
Cce
L1
L2
L3
LB
17
fF
30
191
fF
31
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
32
33
34
35 (note 1)
CJS
LE
Rev. 06 - 12 March 2008
10 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
Rev. 06 - 12 March 2008
11 of 13
BFG92A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Rev. 06 - 12 March 2008
12 of 13
BFG92A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
BFG92AX_N_6
Modifications:
BFG92AX_N_5
Release date
20080312
Data sheet status
Change notice
Supersedes
Product data sheet
-
BFG92AX_N_5
• Characteristics Table; DC current gain value changed
20071126
Product data sheet
-
BFG92AX_4
BFG92AX_4
19980923
Product specification
-
BFG92SERIES_3
(9397 750 04344)
BFG92SERIES_3
BFG92SERIES_2
BFG92_SERIES_1
19950912
19921101
-
Product specification
-
-
-
BFG92SERIES_2
Product specification
-
BFG92_SERIES_1
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 March 2008
Document identifier: BFG92AX_N_6
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