BFQ149 [NXP]
PNP 5 GHz wideband transistor; PNP 5 GHz宽带晶体管
| 型号： | BFQ149 |
| 厂家： | 
NXP |
| 描述： | PNP 5 GHz wideband transistor |
| 文件： | 总6页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ149
PNP 5 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
DESCRIPTION
PINNING
PIN
PNP transistor in a SOT89 envelope.
It is intended for use in
DESCRIPTION
Code: FG
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
using SMD technology.
page
1
2
3
emitter
collector
base
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEO
IC
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open base
−
−
−
−
−15
V
−
−100 mA
Ptot
hFE
fT
up to Ts = 135 °C (note 1)
−
1
−
−
W
IC = −70 mA; VCE = −10 V; Tj = 25 °C 20
50
5
transition frequency
IC = −75 mA; VCE = −10 V;
f = 500 MHz; Tj = 25 °C
4
−
−
GHz
dB
GUM
F
maximum unilateral power gain
noise figure
IC = −50 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
12
−
−
IC = −50 mA; VCE = −10 V;
Rs = 60 Ω; f = 500 MHz;
Tamb = 25 °C
3.75
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
−
V
open base
−15
−3
V
open collector
V
−100
−150
1
mA
mA
W
ICM
f > 1 MHz
Ptot
Tstg
Tj
up to Ts = 135 °C (note 1)
−65
150
150
°C
°C
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 135 °C (note 1)
40 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = −10 V;
MIN. TYP. MAX. UNIT
ICBO
hFE
fT
−
−
100
−
nA
IC = −70 mA; VCE = −10 V
20
4
50
5
transition frequency
IC = −70 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
−
GHz
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = 0; VCB = −10 V; f = 1 MHz
IC = 0; VEB = −0.5 V; f = 1 MHz
IC = 0; VCE = −10 V; f = 1 MHz
−
−
−
−
2
−
−
−
−
pF
pF
pF
dB
Ce
4
Cre
GUM
1.7
12
maximum unilateral power gain
(note 1)
IC = −50 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
F
noise figure
IC = −50 mA; VCE = −10 V;
Rs = 60 Ω; f = 500 MHz;
−
3.75
−
dB
T
amb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
September 1995
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
MEA328
MBB347
8
4
handbook, halfpage
handbook, halfpage
f
C
c
T
(pF)
(GHz)
6
3
4
2
2
1
0
0
0
50
100
0
10
20
I
(mA)
(V)
V
C
CB
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = −10 V; f = 500 MHz; Tamb = 25 °C.
Fig.2 Collector capacitance as a function of
collector-base voltage.
Fig.3 Transition frequency as a function of
collector current.
MBB345
MEA329
80
40
handbook, halfpage
handbook, halfpage
G
UM
h
(dB)
FE
60
40
20
0
30
20
10
0
2
4
0
100
200
3
I
(mA)
10
10
10
10
C
f (MHz)
VCE = −10 V; Tj = 25 °C.
Ic = −50 mA; VCE = −10 V; Tamb = 25 °C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
Fig.4 DC current gain as a function of collector
current.
September 1995
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
September 1995
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
相关型号：
BFQ149-T
TRANSISTOR C BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP RF Small Signal
NXP
BFQ149TRL13
RF Small Signal Bipolar Transistor, 0.075A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP
YAGEO
BFQ161T/R
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43, 3 PIN, BIP RF Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明