BFQ235 [NXP]
NPN video transistor; NPN晶体管视频
| 型号： | BFQ235 |
| 厂家： | 
NXP |
| 描述： | NPN video transistor |
| 文件： | 总8页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ235A
NPN video transistor
1998 Oct 06
Product specification
Supersedes data of 1997 Oct 02
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
FEATURES
DESCRIPTION
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
NPN video transistor in a SOT128B
(TO-202) plastic package.
PNP complement: BFQ255A.
page
• Good thermal stability
PINNING
• Gold metallization ensures
excellent reliability.
PIN
1
DESCRIPTION
emitter
APPLICATIONS
2
collector
base
3
• CRT amplifier buffer/driver in
high-resolution colour graphics
monitors.
1
2 3
MGA323
Fig.1 Simplified outline
(SOT128B; TO-202).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
115
UNIT
VCBO
VCER
IC
open emitter
−
−
−
−
−
−
−
−
V
RBE = 100 Ω
110
300
3
V
mA
W
Ptot
hFE
fT
Ts ≤ 100 °C; note 1
IC = 50 mA; VCE = 10 V; Tamb = 25 °C 20
IC = 50 mA; VCE = 10 V; Tamb = 25 °C 0.8
35
−
transition frequency
1.2
−
GHz
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
115
UNIT
VCBO
VCEO
VCER
VEBO
IC
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
−
−
−
−
−
V
V
V
V
95
RBE = 100 Ω
110
3
open collector
300
3
mA
W
Ptot
Ts ≤ 100 °C; note 1; see Fig.3
Tstg
Tj
−65
+150
175
°C
°C
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Oct 06
2
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 100 °C; note 1
25
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 0.1 mA; IE = 0
MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
115
95
110
3
−
−
V
V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0
−
−
V
V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
IB = 0; VCE = 50 V
IE = 0; VCB = 50 V
−
−
V
ICES
ICBO
hFE
collector cut-off current
collector cut-off current
DC current gain
−
−
100
20
−
µA
µA
−
−
IC = 50 mA; VCE = 10 V; Tamb = 25 °C; 20
35
see Fig.4
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz; 0.8
Tamb = 25 °C; see Fig.6
1.2
2
−
−
GHz
pF
Ccb
collector-base capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
−
Tamb = 25 °C; see Fig.5
MBB887
MBB888
4
400
handbook, halfpage
handbook, halfpage
I
P
C
tot
(mA)
(W)
3
300
200
100
2
1
0
0
0
0
50
100
150
200
20
40
60
80
o
T
( C)
V
(V)
s
CEO
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1998 Oct 06
3
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
MBB891
MBB890
50
5.5
handbook, halfpage
handbook, halfpage
C
cb
h
(pF)
FE
4.5
40
3.5
2.5
30
20
1.5
0
0
200
300
100
10
20
30
40
I
(mA)
C
V
(V)
CB
VCE = 10 V; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4 DC current gain as a function of
collector current; typical values.
Fig.5 Collector-base capacitance as a function of
collector-base voltage; typical values.
MBK898
1.5
handbook, halfpage
f
r
(GHz)
1
0.5
0
0
50
100
150
I
(mA)
C
VCE = 10 V; f = 100 MHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
1998 Oct 06
4
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
SOT128B
E
1
c
1
P
P
1
H
E
D
L
L
1
2
L
1
2
3
c
b
w
M
p
Q
e
1
A
e
E
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
L
2
UNIT
b
c
c
D
E
E
e
e
H
E
L
L
P
P
1
Q
w
A
1
1
p
1
1
max
4.6
4.4
0.8
0.6
0.65
0.5
0.56
0.46
8.6
8.4
10.1
9.9
10.4
10.0
24.2
23.8
13.3
12.2
2.4
2.0
3.8
3.6
3.9
3.7
1.7
1.5
mm
0.25
5.08
2.54
2.5
Note
1. Plastic flash allowed within this zone
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
SOT128B
TO-202
1998 Oct 06
5
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 06
6
Discrete Semiconductors
Product specification
NPN video transistor
BFQ235A
NOTES
1998 Oct 06
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Middle East: see Italy
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Fax. +43 160 101 1210
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
Norway: Box 1, Manglerud 0612, OSLO,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belgium: see The Netherlands
Brazil: see South America
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Portugal: see Spain
Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Colombia: see South America
Czech Republic: see Austria
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Slovakia: see Austria
Slovenia: see Italy
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125102/00/03/pp8
Date of release: 1998 Oct 06
Document order number: 9397 750 04568
相关型号：
©2020 ICPDF网 联系我们和版权申明