BFQ34/01 [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BFQ34/01 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
| 文件： | 总12页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ34
NPN 4 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
DESCRIPTION
PINNING
PIN
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
DESCRIPTION
Code: BFQ34/01
4
lfpage
1
2
3
4
collector
emitter
base
1
3
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
emitter
2
Top view
MBK187
Fig.1 SOT122A.
capabilities.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
TYP.
MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current
−
25
18
150
2.7
−
V
open base
−
−
−
V
mA
W
Ptot
fT
total power dissipation
transition frequency
output voltage
up to Tc = 160 °C
IC = 150 mA; VCE = 15 V; f = 500 MHz 4
GHz
V
Vo
IC = 120 mA; VCE = 15 V; RL = 75 Ω; 1.2
Tamb = 25 °C; dim = −60 dB
−
f(p+q-r) = 793.25 MHz
PL1
ITO
output power at 1 dB gain
compression
IC = 120 mA; VCE = 15 V; RL = 75 Ω; 26
f = 800 MHz; Tamb = 25 °C
−
−
dBm
dBm
third order intercept point
IC = 120 mA; VCE = 15 V; RL = 75 Ω; 45
Tamb = 25 °C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
−
−
−
−
25
18
2
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
V
open collector
V
150
2.7
mA
W
°C
°C
Ptot
Tstg
Tj
up to Tc = 160 °C
−65 150
200
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-c
thermal resistance from junction to case
15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 15 V
MIN. TYP. MAX. UNIT
ICBO
hFE
−
−
100
−
µA
IC = 75 mA; VCE = 15 V
IC = 150 mA; VCE = 15 V
25
25
70
70
3.5
4
−
fT
transition frequency
IC = 75 mA; VCE = 15 V; f = 500 MHz 3
−
GHz
GHz
IC = 150 mA; VCE = 15 V;
f = 500 MHz
3.5
−
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = 0; VCB = 15 V; f = 1 MHz
IC = 0; VEB = 0.5 V; f = 1 MHz
−
−
−
2
2.75 pF
pF
1.35 pF
Ce
Cre
11
1
−
IC = 10 mA; VCE = 15 V; f = 1 MHz;
Tamb = 25 °C
Cc-s
F
collector-stud capacitance
noise figure (see Fig.2)
note 1
−
−
0.8
8
−
−
pF
dB
IC = 120 mA; VCE = 15 V;
f = 500 MHz; Tamb = 25 °C
GUM
maximum unilateral power gain
(note 2)
IC = 120 mA; VCE = 15 V;
f = 500 MHz; Tamb = 25 °C
−
16.3
−
dB
Vo
output voltage
Figs 2 and 7 and note 3
note 4
−
−
1.2
26
−
−
V
PL1
output power at 1 dB gain
compression (see Fig.2)
dBm
ITO
third order intercept point (see Fig.2) note 5
−
45
−
dBm
Notes
1. Measured with grounded emitter and base.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
3. dim = −60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 120 mA; VCE = 15 V; Tamb = 25 °C; RL = 75 Ω;
measured at f = 800 MHz.
5. IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Pp = ITO − 6 dB; fp = 800 MHz;
Pq = ITO − 6 dB; fq = 801 MHz;
measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MBB361
120
handbook, halfpage
h
FE
2.2 nF
handbook, halfpage
2.2 nF
V
V
BB
CC
80
40
L2
200 Ω
L1
10 nF
output
75 Ω
10 nF
10 nF
input
75 Ω
DUT
0.68 pF
24 Ω
24 Ω
0
0
40
80
120
160
(mA)
MEA322
I
C
f = 40 to 860 MHz; L1 = L2 = 5 µH Ferroxcube coil.
VCE = 15 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Intermodulation distortion MATV test circuit.
MEA320
MBB357
8
6
handbook, halfpage
handbook, halfpage
f
T
C
c
(GHz)
6
(pF)
4
4
2
0
2
0
0
40
80
120
160
0
10
20
V
(V)
CB
I
(mA)
C
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = 15 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Collector capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
MEA319
MEA321
20
40
handbook, halfpage
handbook, halfpage
d
im
(dB)
gain
(dB)
30
40
50
60
70
30
20
G
UM
10
2
Is
I
12
0
10
–1
50
100
150
1
10
f (GHz)
I
(mA)
C
Ic = 120 mA; VCE = 15 V; Tamb = 25 °C.
Vo = 1.2 V; VCE = 15 V; f(p+q−r) = 793.25 MHz
Fig.7 Intermodulation distortion as a function of
collector current.
Fig.6 Gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
1
0.5
2
0.2
5
1200 MHz
1000
800
10
+ j
– j
0.2
0.5
500
1
2
5
10
0
∞
10
200
5
0.2
2
0.5
MEA315
1
Ic = 120 mA; VCE = 15 V; Tamb= 25 °C.
Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (S11).
90°
120°
60°
200 MHz
150°
30°
500
800
1000
1200
+ ϕ
− ϕ
5
10
15
180°
0°
30°
150°
60°
120°
MEA317
90°
Ic = 120 mA; VCE = 15 V; Tamb= 25 °C.
Fig.9 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
90°
120°
60°
1200
1000
800
500
150°
30°
+ ϕ
− ϕ
200 MHz
0.1
0.2
180°
0°
30°
150°
60°
120°
MEA318
90°
Ic = 120 mA; VCE = 15 V; Tamb= 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
800
1000
1200
10
500
200 MHz
5
0.2
2
0.5
MEA316
1
Ic = 120 mA; VCE = 15 V; Tamb= 25 °C.
Zo = 50 Ω.
Fig.11 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
ceramic
BeO
A
metal
Q
c
N
1
A
D
1
w
D
M
A
1
M
2
W
N
N
3
M
1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
L
N
1
UNIT
A
b
c
D
D
D
H
M
M
N
N
Q
W
w
1
α
1
2
1
3
max.
8-32
UNC
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24 27.56 9.91
6.93 25.78 9.14
3.18
2.66
1.66
1.39
11.82
11.04
3.86
2.92
3.38
2.74
mm
0.381
90°
1.02
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-18
SOT122A
September 1995
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
10
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NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All
from the stud.
PC/PC-peripherals
It is primarily intended for driver and final stages in MATV system amplifiers. It is also
low power band IV and V equipment. Diffused emitter-ballasting resistors and the ap
sandwich metallization ensure an optimum temperature profile and excellent reliabilit
device also features high output voltage capabilities.
Cross reference
Models
Packages
Application notes
Selection guides
Other technical documentation
End of Life information
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Type
nr.
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Title
release date Datasheet status count (kB)
Relevant Links
BFQ34 NPN 4 GHz wideband
transistor
01-Sep-95
Product
Specification
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BFQ34
BFQ34
North
Order code
(12nc)
Partnumber American
Partnumber
marking/packing package device status
Standard
BFQ34/01 BFQ34/01 9336 088 50112 Marking * Bulk SOT122 Full productio
Pack
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