BFR106-T [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BFR106-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
PINNING
PIN
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
DESCRIPTION
age
3
Code: R7p
1
2
3
base
emitter
collector
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
open base
20
15
100
500
V
V
mA
mW
Ptot
hFE
fT
up to Ts = 70 C; note 1
IC = 50 mA; VCE = 9 V; Tamb = 25 C 25
80
5
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 C
GHz
dB
GUM
Vo
maximum unilateral power gain
output voltage
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 C
11.5
350
IC = 50 mA; VCE = 9 V; RL = 75 ;
Tamb = 25 C; dim = 60 dB;
f(pqr) = 793.25 MHz
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
20
V
open base
15
V
open collector
3
V
100
500
150
175
mA
mW
C
C
Ptot
up to Ts = 70 C; note 1
Tstg
Tj
65
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 70 C; note 1
210 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 10 V
MIN. TYP. MAX. UNIT
collector cut-off current
DC current gain
100
nA
hFE
fT
IC = 50 mA; VCE = 9 V
25
80
5
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
GHz
Tamb = 25 C
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
1.5
4.5
1.2
11.5
pF
pF
pF
dB
Ce
Cre
GUM
maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz;
(note 1)
Tamb = 25 C
F
noise figure
IC = 30 mA; VCE = 6 V; f = 800 MHz;
3.5
dB
dB
mV
T
amb = 25 C
d2
second order intermodulation
distortion
note 2
50
350
Vo
output voltage
note 3
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
----------------------------------------------------------
GUM = 10 log
dB.
1 – S11 21 – S22 2
2. IC = 30 mA; VCE = 6 V; RL = 75 ; Tamb = 25 C;
f(pq) = 810 MHz; Vo = 100 mV.
3. dim = 60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; f(pqr) = 793.25 MHz.
September 1995
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
MBB774
MEA398 - 1
120
600
handbook, halfpage
P
tot
(mW)
h
FE
80
40
400
200
0
0
0
40
80
120
0
50
100
150
200
o
( C)
I
(mA)
T
C
s
VCE = 9 V; Tamb = 25 C.
Fig.2 Power derating curve.
Fig.3 DC current gain as a function of collector
current.
MBB773
MEA399
8
40
handbook, halfpage
handbook, halfpage
f
G
T
UM
(GHz)
6
(dB)
30
4
2
20
10
0
0
0
2
4
3
40
80
120
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 9 V; f = 500 MHz; Tj = 25 C.
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
1
0.5
2
0.2
2000 MHz
1500
5
1200
1000
0.2
10
+ j
– j
800
0.5
1
2
5
10
500
0
∞
200
10
100
5
0.2
40 MHz
2
0.5
MEA400
1
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Z
o = 50 .
Fig.6 Common emitter input reflection coefficient (S11).
90°
120°
60°
150°
30°
40 MHz
100
500
800
200
1000
1200
1500
+ ϕ
− ϕ
50 40
30
20
10
180°
0°
2000 MHz
30°
150°
60°
120°
MEA403
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
5
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
90°
120°
60°
2000 MHz
1500
150°
30°
1200
800
1000
500
+ ϕ
− ϕ
200
0.5 0.4
0.3
0.2
0.1
100
180°
0°
40 MHz
30°
150°
60°
120°
MEA402
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
800 MHz
0.5
+ j
– j
0.2
1
2
5
10
0
∞
500
200
10
5
0.2
100
40 MHz
2
0.5
MEA401
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
o = 50 .
1
Z
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
6
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
September 1995
7
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
September 1995
8
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
September 1995
9
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provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp10
Date of release: September 1995
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