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BFR31-T [NXP]

TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal;
BFR31-T
型号： BFR31-T
厂家： NXP    NXP
描述：

TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

放大器 光电二极管 晶体管
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中文：  中文翻译
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFR30; BFR31  
N-channel field-effect transistors  
Product specification  
1997 Dec 05  
Supersedes data of April 1991  
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
DESCRIPTION  
Planar epitaxial symmetrical junction N-channel  
field-effect transistor in a plastic SOT23 package.  
3
handbook, halfpage  
d
g
s
APPLICATIONS  
Low level general purpose amplifiers in thick and  
1
2
thin-film circuits.  
Top view  
MAM385  
PINNING - SOT23  
Marking codes:  
BFR30: M1p.  
BFR31: M2p.  
PIN  
SYMBOL  
DESCRIPTION  
drain(1)  
source(1)  
1
2
3
d
s
g
Fig.1 Simplified outline and symbol.  
gate  
Note  
CAUTION  
1. Drain and source are interchangeable.  
This product is supplied in anti-static packing to prevent  
damage caused by electrostatic discharge during  
transport and handling.  
QUICK REFERENCE DATA  
SYMBOL  
VDS  
PARAMETER  
drain-source voltage  
CONDITIONS  
MIN.  
MAX.  
25  
UNIT  
V
VGSO  
Ptot  
gate-source voltage  
open drain  
25  
V
total power dissipation  
Tamb 40 C  
250  
mW  
IDSS  
drain current  
VGS = 0; VDS = 10 V  
BFR30  
4
1
10  
5
mA  
mA  
BFR31  
yfs  
common-source transfer admittance  
ID = 1 mA; VDS = 10 V; f = 1 kHz  
BFR30  
BFR31  
1
4
mS  
mS  
1.5  
4.5  
1997 Dec 05  
2
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
drain-source voltage  
CONDITIONS  
MIN.  
MAX.  
25  
UNIT  
VDS  
VDGO  
VGSO  
ID  
V
V
V
drain-gate voltage  
open source  
25  
25  
10  
gate-source voltage  
drain current  
open drain  
mA  
mA  
mW  
C  
IG  
forward gate current (DC)  
total power dissipation  
storage temperature  
operating junction temperature  
5
Ptot  
Tstg  
Tj  
Tamb 40 C; note 1; see Fig.2  
250  
+150  
150  
65  
C  
Note  
1. Mounted on a ceramic substrate of 8 10 0.7 mm.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient  
430  
K/W  
Note  
1. Mounted on a ceramic substrate of 8 10 0.7 mm.  
MDA245  
300  
handbook, halfpage  
P
tot  
(mW)  
200  
100  
0
0
40  
80  
120  
160  
T
200  
(°C)  
amb  
Fig.2 Power derating curve.  
1997 Dec 05  
3
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
CHARACTERISTICS  
Tj = 25 C unless otherwise specified.  
SYMBOL  
IGSS  
PARAMETER  
gate cut-off current  
CONDITIONS  
VDS = 0; VGS = 10 V  
MIN.  
MAX.  
0.2  
UNIT  
nA  
IDSS  
drain current  
VGS = 0; VDS = 10 V  
ID = 1 mA; VDS = 10 V  
ID = 50 A; VDS = 10 V  
ID = 0.5 nA; VDS = 10 V  
BFR30  
4
1
10  
5
mA  
mA  
BFR31  
VGS  
VGS  
VGSoff  
yfs  
yfs  
yos  
yos  
Cis  
gate-source voltage  
BFR30  
0.7  
3  
V
V
BFR31  
0
1.3  
gate-source voltage  
BFR30  
4  
2  
V
V
BFR31  
gate-source cut-off voltage  
BFR30  
5  
V
V
BFR31  
2.5  
common-source transfer admittance  
ID = 1 mA; VDS = 10 V; f = 1 kHz;  
Tamb = 25 C  
BFR30  
1
4
mS  
mS  
BFR31  
1.5  
4.5  
common-source transfer admittance  
ID = 200 A; VDS = 10 V; f = 1 kHz;  
T
amb = 25 C  
BFR30  
0.5  
mS  
mS  
BFR31  
0.75  
common source output admittance  
ID = 1 mA; VDS = 10 V; f = 1 kHz  
BFR30  
40  
25  
S  
S  
BFR31  
common source output admittance  
ID = 200 A; VDS = 10 V; f = 1 kHz  
BFR30  
20  
15  
S  
S  
BFR31  
input capacitance  
VDS = 10 V; f = 1 MHz  
ID = 1 mA  
4
4
pF  
pF  
ID = 0.2 nA  
Crs  
feedback capacitance  
VDS = 10 V; f = 1 MHz; Tamb = 25 C  
ID = 1 mA  
1.5  
1.5  
0.5  
pF  
pF  
V  
ID = 200 A  
Vn  
equivalent input noise voltage  
ID = 200 A; VDS = 10 V;  
B = 0.6 to 100 Hz  
1997 Dec 05  
4
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
MDA657  
MDA658  
10  
10  
handbook, halfpage  
handbook, halfpage  
I
D
(mA)  
I
D
(mA)  
8
8
max  
V
= 0 V  
GS  
6
6
4
−0.5  
−1.0  
4
typ  
2
2
−1.5  
−2.0  
min  
0
0
0
2
4
6
8
10  
(V)  
−4  
−3  
−2  
−1  
0
V
(V)  
V
GS  
DS  
BFR30.  
VDS = 10 V; Tj = 25 C.  
BFR30.  
Tj = 25 C.  
Fig.3 Input characteristics.  
Fig.4 Output characteristics; typical values.  
MDA659  
MDA660  
5
5
handbook, halfpage  
handbook, halfpage  
I
I
D
D
(mA)  
(mA)  
4
4
V
= 0 V  
GS  
max  
3
2
3
2
−0.2  
−0.4  
typ  
−0.6  
−0.8  
1
1
0
−1  
−1.2  
min  
0
−5  
−4  
−3  
−2  
−1  
0
(V)  
0
2
4
6
8
10  
(V)  
V
V
DS  
GS  
BFR31.  
BFR31.  
VDS = 10 V; Tj = 25 C.  
Tj = 25 C.  
Fig.5 Input characteristics.  
Fig.6 Output characteristics; typical values.  
1997 Dec 05  
5
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
MDA661  
MDA662  
6
6
handbook, halfpage  
handbook, halfpage  
I
I
D
D
(mA)  
(mA)  
V
= 0 V  
4
4
GS  
V
=
GS  
0 V  
−0.5  
−1.0  
−0.2  
−0.4  
2
0
2
−0.6  
−0.8  
−1  
−1.5  
−2.0  
−1.2  
0
25  
50  
75  
100  
125  
25  
50  
75  
100  
125  
T (°C)  
T (°C)  
j
j
BFR30.  
BFR31.  
VDS = 10 V.  
VDS = 10 V.  
Fig.7 Drain current as a function of junction  
temperature; typical values.  
Fig.8 Drain current as a function of junction  
temperature; typical values.  
MDA663  
MDA656  
10  
−6  
handbook, halfpage  
handbook, halfpage  
I
GSS  
V
GS(off)  
(V)  
(nA)  
1
−4  
−2  
0
−1  
10  
−2  
10  
BFR30  
BFR31  
−3  
10  
0
50  
100  
150  
200  
0
2
4
6
8
I
10  
(mA)  
T (°C)  
j
DSS  
VGS = 10 V; VDS = 0.  
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 C.  
Fig.9 Gate cut-off current as a function of junction  
temperature; typical values.  
Fig.10 Gate-source cut-off voltage as a function of  
drain current; typical values.  
1997 Dec 05  
6
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
MDA664  
MDA665  
7.5  
75  
handbook, halfpage  
handbook, halfpage  
y
y
fs  
os  
(mA/V)  
(μA/V)  
5
50  
BFR31  
BFR30  
BFR30  
BFR31  
2.5  
25  
0
0
0
0
2
4
6
2
4
6
I
(mA)  
I
(mA)  
D
D
VDS = 10 V; f = 1 kHz; Tamb = 25 C.  
VDS = 10 V; f = 1 kHz; Tamb = 25 C.  
Fig.11 Common source transfer admittance as a  
function of drain current; typical values.  
Fig.12 Common source output admittance as a  
function of drain current; typical values.  
MDA667  
MDA666  
4
10  
5
handbook, halfpage  
handbook, halfpage  
C
is  
(pF)  
|y  
|
os  
(μA/V)  
4
3
10  
3
2
2
10  
(1)  
(2)  
1
0
BFR30  
BFR31  
10  
0
10  
20  
30  
0
−1  
−2  
−3  
−4  
−5  
(V)  
V
(V)  
V
DS  
GS  
f = 1 kHz; Tamb = 25 C.  
(1) ID = 4 mA. (2) ID = 1 mA.  
VDS = 10 V; f = 1 MHz; Tamb = 25 C.  
Fig.13 Common source output admittance as a  
function of drain-source voltage;  
typical values.  
Fig.14 Input capacitance as a function of  
gate-source voltage; typical values.  
1997 Dec 05  
7
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
MDA668  
−1  
handbook, halfpage  
C
rs  
(pF)  
−0.8  
−0.6  
−0.4  
−0.2  
0
0
−1  
−2  
−3  
−4  
−5  
(V)  
V
GS  
VDS = 10 V; f = 1 MHz; Tamb = 25 C.  
Fig.15 Feedback capacitance as a function of  
gate-source voltage; typical values.  
MDA669  
4
10  
e
n
(nV/ Hz)  
3
10  
2
10  
10  
(1)  
(2)  
1
10  
2
3
4
5
6
10  
10  
10  
10  
10  
f (Hz)  
VDS = 10 V; Tamb = 25 C.  
(1) BFR31; ID = 1 mA.  
(2) BFR30; ID = 4 mA.  
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.  
1997 Dec 05  
8
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
MDA670  
4
10  
i
n
(fA/ Hz)  
3
10  
2
10  
(1)  
(2)  
10  
1
2
3
4
5
6
10  
10  
10  
10  
10  
10  
f (Hz)  
VDS = 10 V; Tamb = 25 C.  
(1) BFR31; ID = 1 mA.  
(2) BFR30; ID = 4 mA.  
Fig.17 Equivalent noise current source as a function of frequency; typical values.  
1997 Dec 05  
9
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
PACKAGE OUTLINE  
Plastic surface-mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-11-04  
06-03-16  
SOT23  
TO-236AB  
1997 Dec 05  
10  
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DEFINITIONS  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Product specification The information and data  
provided in a Product data sheet shall define the  
specification of the product as agreed between NXP  
Semiconductors and its customer, unless NXP  
Semiconductors and customer have explicitly agreed  
otherwise in writing. In no event however, shall an  
agreement be valid in which the NXP Semiconductors  
product is deemed to offer functions and qualities beyond  
those described in the Product data sheet.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
DISCLAIMERS  
Limited warranty and liability Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
1997 Dec 05  
11  
NXP Semiconductors  
Productspecification  
N-channel field-effect transistors  
BFR30; BFR31  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Non-automotive qualified products Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
Terms and conditions of commercial sale NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
individual agreement is concluded only the terms and  
conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Semiconductors’ product specifications.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
1997 Dec 05  
12  
NXP Semiconductors  
provides High Performance Mixed Signal and Standard Product  
solutions that leverage its leading RF, Analog, Power Management,  
Interface, Security and Digital Processing expertise  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2010  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R77/02/pp13  
Date of release: 1997 Dec 05  

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