BFR31TRL [NXP]
TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal;
| 型号： | BFR31TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal 晶体 晶体管 |
| 文件： | 总12页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31
N-channel field-effect transistors
Product specification
1997 Dec 05
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
3
handbook, halfpage
d
g
s
APPLICATIONS
1
2
• Low level general purpose amplifiers in thick and
thin-film circuits.
Top view
MAM385
PINNING - SOT23
Marking codes:
BFR30: M1p.
BFR31: M2p.
PIN
SYMBOL
DESCRIPTION
drain(1)
source(1)
1
2
3
d
s
g
Fig.1 Simplified outline and symbol.
gate
Note
CAUTION
1. Drain and source are interchangeable.
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
−
−
V
VGSO
Ptot
gate-source voltage
open drain
amb ≤ 40 °C
−25
V
total power dissipation
T
250
mW
IDSS
drain current
VGS = 0; VDS = 10 V
BFR30
4
1
10
5
mA
mA
BFR31
yfs
common-source transfer admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
BFR31
1
4
mS
mS
1.5
4.5
1997 Dec 05
2
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
VDS
VDGO
VGSO
ID
−
−
−
−
−
−
V
V
V
drain-gate voltage
open source
open drain
−25
−25
10
gate-source voltage
drain current
mA
mA
mW
°C
IG
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
5
Ptot
Tstg
Tj
T
amb ≤ 40 °C; note 1; see Fig.2
250
+150
150
−65
−
°C
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
430
K/W
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MDA245
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40
80
120
160
T
200
(°C)
amb
Fig.2 Power derating curve.
1997 Dec 05
3
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
gate cut-off current
CONDITIONS
VDS = 0; VGS = −10 V
MIN.
MAX.
−0.2
UNIT
nA
IGSS
IDSS
−
drain current
VGS = 0; VDS = 10 V
ID = 1 mA; VDS = 10 V
ID = 50 µA; VDS = 10 V
ID = 0.5 nA; VDS = 10 V
BFR30
4
1
10
5
mA
mA
BFR31
VGS
VGS
VGSoff
yfs
gate-source voltage
BFR30
−0.7
−3
V
V
BFR31
0
−1.3
gate-source voltage
BFR30
−
−
−4
−2
V
V
BFR31
gate-source cut-off voltage
BFR30
−
−
−5
V
V
BFR31
−2.5
common-source transfer admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
BFR30
1
4
mS
mS
BFR31
1.5
4.5
yfs
common-source transfer admittance
ID = 200 µA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
BFR30
0.5
−
−
mS
mS
BFR31
0.75
yos
common source output admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
−
−
40
25
µS
µS
BFR31
yos
common source output admittance
ID = 200 µA; VDS = 10 V; f = 1 kHz
BFR30
−
−
20
15
µS
µS
BFR31
Cis
input capacitance
VDS = 10 V; f = 1 MHz
ID = 1 mA
−
−
4
4
pF
pF
ID = 0.2 nA
Crs
feedback capacitance
VDS = 10 V; f = 1 MHz; Tamb = 25 °C
ID = 1 mA
−
−
−
1.5
1.5
0.5
pF
pF
µV
ID = 200 µA
Vn
equivalent input noise voltage
ID = 200 µA; VDS = 10 V;
B = 0.6 to 100 Hz
1997 Dec 05
4
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
MDA657
MDA658
10
10
handbook, halfpage
handbook, halfpage
I
D
(mA)
I
D
(mA)
8
8
max
V
= 0 V
GS
6
6
4
−0.5
−1.0
4
typ
2
2
−1.5
−2.0
min
0
0
0
2
4
6
8
10
(V)
−4
−3
−2
−1
0
V
(V)
V
GS
DS
BFR30.
VDS = 10 V; Tj = 25 °C.
BFR30.
Tj = 25 °C.
Fig.3 Input characteristics.
Fig.4 Output characteristics; typical values.
MDA659
MDA660
5
5
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
4
4
V
= 0 V
GS
max
3
2
3
2
−0.2
−0.4
typ
−0.6
−0.8
1
1
0
−1
−1.2
min
0
−5
−4
−3
−2
−1
0
(V)
0
2
4
6
8
10
(V)
V
V
DS
GS
BFR31.
BFR31.
VDS = 10 V; Tj = 25 °C.
Tj = 25 °C.
Fig.5 Input characteristics.
Fig.6 Output characteristics; typical values.
1997 Dec 05
5
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
MDA661
MDA662
6
6
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
4
4
GS
V
=
GS
0 V
−0.5
−1.0
−0.2
−0.4
2
0
2
−0.6
−0.8
−1
−1.5
−2.0
−1.2
0
25
50
75
100
125
25
50
75
100
125
T (°C)
T (°C)
j
j
BFR30.
DS = 10 V.
BFR31.
V
VDS = 10 V.
Fig.7 Drain current as a function of junction
temperature; typical values.
Fig.8 Drain current as a function of junction
temperature; typical values.
MDA663
MDA656
10
−6
handbook, halfpage
handbook, halfpage
I
GSS
V
GS(off)
(nA)
(V)
1
−4
−1
10
−2
−2
10
BFR30
BFR31
−3
10
0
0
0
50
100
150
200
2
4
6
8
I
10
(mA)
T (°C)
j
DSS
VGS = −10 V; VDS = 0.
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 °C.
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
1997 Dec 05
6
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
MDA664
MDA665
7.5
75
handbook, halfpage
handbook, halfpage
y
y
fs
os
(mA/V)
(µA/V)
5
50
BFR31
BFR30
BFR30
BFR31
2.5
25
0
0
0
0
2
4
6
2
4
6
I
(mA)
I
(mA)
D
D
VDS = 10 V; f = 1 kHz; Tamb = 25 °C.
VDS = 10 V; f = 1 kHz; Tamb = 25 °C.
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
Fig.12 Common source output admittance as a
function of drain current; typical values.
MDA667
MDA666
4
10
5
handbook, halfpage
handbook, halfpage
C
is
(pF)
|y
|
os
(µA/V)
4
3
10
3
2
2
10
(1)
(2)
1
0
BFR30
BFR31
10
0
10
20
30
0
−1
−2
−3
−4
V
−5
(V)
V
(V)
DS
GS
f = 1 kHz; Tamb = 25 °C.
(1) ID = 4 mA. (2) ID = 1 mA.
VDS = 10 V; f = 1 MHz; Tamb = 25 °C.
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
1997 Dec 05
7
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
MDA668
−1
handbook, halfpage
C
rs
(pF)
−0.8
−0.6
−0.4
−0.2
0
0
−1
−2
−3
−4
V
−5
(V)
GS
VDS = 10 V; f = 1 MHz; Tamb = 25 °C.
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
MDA669
4
10
e
n
(nV/ Hz)
3
10
2
10
10
(1)
(2)
1
10
2
3
4
5
6
10
10
10
10
10
f (Hz)
VDS = 10 V; Tamb = 25 °C.
(1) BFR31; ID = 1 mA.
(2) BFR30; ID = 4 mA.
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
1997 Dec 05
8
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
MDA670
4
10
i
n
(fA/ Hz)
3
10
2
10
(1)
(2)
10
1
2
3
4
5
6
10
10
10
10
10
10
f (Hz)
VDS = 10 V; Tamb = 25 °C.
(1) BFR31; ID = 1 mA.
(2) BFR30; ID = 4 mA.
Fig.17 Equivalent noise current source as a function of frequency; typical values.
1997 Dec 05
9
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Dec 05
10
Philips Semiconductors
Productspecification
N-channel field-effect transistors
BFR30; BFR31
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 05
11
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© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117067/00/02/pp12
Date of release: 1997 Dec 05
Document order number: 9397 750 03154
相关型号：
BFR31TRL13
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET
YAGEO
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