BFR92A-T_技术文档

BFR92A

NPN 5 GHz wideband transistor

Rev. 04 — 2 March 2009

Product data sheet

IMPORTANT NOTICE

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- NXP Semiconductors, which will be used in future data sheets together with new contact

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NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

FEATURES

DESCRIPTION

page

• High power gain

NPN wideband transistor in a plastic

SOT23 package.

PNP complement: BFT92.

3

• Low noise figure

• Low intermodulation distortion.

1

2

PINNING

APPLICATIONS

Top view

MSB003

1

DESCRIPTION

• RF wideband amplifiers and

oscillators.

Marking code: P2%.

base

2

emitter

Fig.1 SOT23.

3

collector

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

20

UNIT

V_CBO

V_CEO

I_C

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

feedback capacitance

transition frequency

−

V

15

25

300

−

V

mA

mW

pF

P_tot

C_re

T_s≤ 95 °C

I_C= i_c= 0; V_CE= 10 V; f = 1 MHz

0.35

5

f_T

I_C= 15 mA; V_CE= 10 V; f = 500 MHz

−

GHz

dB

G_UM

maximum unilateral power gain

I_C= 15 mA; V_CE= 10 V; f = 1 GHz;

14

−

T_amb= 25 °C

I_C= 15 mA; V_CE= 10 V; f = 2 GHz;

T_amb= 25 °C

8

−

dB

mV

F

noise ﬁgure

I_C= 5 mA; V_CE= 10 V; f = 1 GHz;

Γ_s= Γ_opt; T_amb= 25 °C

2.1

V_O

output voltage

d_im= −60 dB; I_C= 14 mA; V_CE= 10 V; 150

R_L= 75 Ω; f_p+ f_q− f_r= 793.25 MHz

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

open emitter

open base

−

20

V

15

V

open collector

2

V

25

mA

mW

°C

P_tot

T_stg

T_j

T_s≤ 95 °C; note 1; see Fig.3

300

+150

175

−65

−

Note

1. T_sis the temperature at the soldering point of the collector pin.

Rev. 04 - 2 March 2009

2 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-s}

thermal resistance from junction to soldering point T_s≤ 95 °C; note 1

260

K/W

Note

1. T_sis the temperature at the soldering point of the collector pin.

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

collector leakage current

DC current gain

CONDITIONS

I_E= 0; V_CB= 10 V

MIN.

TYP. MAX. UNIT

I_CBO

h_FE

C_c

−

50

135

−

nA

I_C= 15 mA; V_CE= 10 V; see Fig.4

65

90

0.6

collector capacitance

I_E= i_e= 0; V_CB= 10 V; f = 1 MHz;

see Fig.5

−

pF

C_e

C_re

f_T

emitter capacitance

feedback capacitance

transition frequency

I_C= i_c= 0; V_EB= 10 V; f = 1 MHz

I_C= i_c= 0; V_CE= 10 V; f = 1 MHz

−

1.2

0.35

5

−

pF

I_C= 15 mA; V_CE= 10 V; f = 500 MHz;

see Fig.6

GHz

G_UM

maximum unilateral power

gain (note 1)

I_C= 15 mA; V_CE= 10 V; f = 1 GHz;

T_amb= 25 °C

−

14

8

−

dB

I_C= 15 mA; V_CE= 10 V; f = 2 GHz;

T_amb= 25 °C

F

noise ﬁgure

I_C= 5 mA; V_CE= 10 V; f = 1 GHz;

Γ_s= Γ_opt; T_amb= 25 °C;

see Figs 13 and 14

2.1

I_C= 5 mA; V_CE= 10 V; f = 2 GHz;

Γ_s= Γ_opt; T_amb= 25 °C;

see Figs 13 and 14

−

3

−

dB

V_O

d₂

output voltage

notes 2 and 3

−

150

−

mV

dB

second order intermodulation

distortion

notes 2 and 4; see Fig.16

−50

Notes

2

S₂₁

2

˙

1. G_UMis the maximum unilateral power gain, assuming S₁₂is zero and G_UM= 10 log

dB .

--------------------------------------------------------------

2

1 – S₁₁

1 – S₂₂

2. Measured on the same die in a SOT37 package (BFR90A).

3. d_im= −60 dB (DIN 45004B); I_C= 14 mA; V_CE= 10 V; R_L= 75 Ω; VSWR < 2; T_amb= 25 °C

V_p= V_Oat d_im= −60 dB; f_p= 795.25 MHz;

V_q= V_O−6 dB; f_q= 803.25 MHz;

V_r= V_O−6 dB; f_r= 805.25 MHz;

measured at f_p+ f_q− f_r= 793.25 MHz.

4. I_C= 14 mA; V_CE= 10 V; R_L= 75 Ω; VSWR < 2; T_amb= 25 °C

V_p= 60 mV at f_p= 250 MHz;

V_q= 60 mV at f_q= 560 MHz;

measured at f_p+ f_q= 810 MHz.

Rev. 04 - 2 March 2009

3 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

2.2 nF

handbook, full pagewidth

2.2 nF

V

CC

V

BB

L3

33 kΩ

1 nF

L2

1 nF

75 Ω

output

L1

1 nF

300 Ω

DUT

75 Ω

input

3.3 pF

18 Ω

0.82 pF

MBB269

L1 = L3 = 5 µH choke.

L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.

Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.

MCD074

MEA425 - 1

120

400

handbook, halfpage

P

tot

(mW)

h

FE

300

80

40

0

200

100

0

10

20

30

50

100

150

200

I

(mA)

C

o

T ( C)

s

V_CE= 10 V; T_j= 25 °C.

Fig.4 DC current gain as a function of collector

current; typical values.

Fig.3 Power derating curve.

Rev. 04 - 2 March 2009

4 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

MBB274

MBB275

1

6

handbook, halfpage

C

c

(pF)

0.8

f

T

(GHz)

4

0.6

0.4

2

0.2

0

5

10

15

20

10

20

30

I

(mA)

V

(V)

C

CB

I_C= i_c= 0; f = 1 MHz; T_j= 25 °C.

V_CE= 10 V; f = 500 MHz; T_amb= 25 °C.

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

Fig.6 Transition frequency as a function of

collector current; typical values.

MBB278

MBB279

30

handbook, halfpage

gain

(dB)

MSG

20

MSG

G

UM

G

UM

10

0

5

10

20

15

25

(mA)

0

5

10

15

20

I

25

(mA)

I

C

V_CE= 10 V; f = 500 MHz.

MSG = maximum stable gain;

G_UM= maximum unilateral power gain.

V_CE= 10 V; f = 1 GHz.

MSG = maximum stable gain;

G_UM= maximum unilateral power gain.

Fig.7 Gain as a function of collector current;

typical values.

Fig.8 Gain as a function of collector current;

typical values.

Rev. 04 - 2 March 2009

5 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

MBB281

MBB280

50

handbook, halfpage

gain

(dB)

40

gain

(dB)

40

G

UM

G

UM

30

20

10

30

MSG

20

G

max

10

0

G

max

0

2

3

4

2

3

4

10

f (MHz)

I_C= 5 mA; V_CE= 10 V.

_UM= maximum unilateral power gain; MSG = maximum stable gain;

I_C= 15 mA; V_CE= 10 V.

G_UM= maximum unilateral power gain; MSG = maximum stable gain;

G

G_max= maximum available gain.

Fig.9 Gain as a function of frequency;

typical values.

Fig.10 Gain as a function of frequency;

typical values.

MBB277

MBB276

40

30

handbook, halfpage

B

S

B

S

F = 3.5 dB

(mS)

20

10

20

3.0

F = 3.0 dB

2.5

0

10

20

30

2.0

1.8

2.4

1.7

20

40

0

20

40

60

80

(mS)

0

20

40

60

G

(mS)

S

G

S

I_C= 4 mA; V_CE= 10 V; f = 800 MHz.

I_C= 14 mA; V_CE= 10 V; f = 800 MHz.

Fig.11 Circles of constant noise figure;

typical values.

Fig.12 Circles of constant noise figure;

typical values.

Rev. 04 - 2 March 2009

6 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

MCD081

MCD082

4

handbook, halfpage

I

= 15 mA

C

f = 2 GHz

F

(dB)

10 mA

5 mA

3

2

1

0

1 GHz

500 MHz

2

1

0

2

1

10

2

3

4

10

I

(mA)

C

f (MHz)

V_CE= 10 V.

Fig.13 Minimum noise figure as a function of

collector current; typical values.

Fig.14 Minimum noise figure as a function of

frequency; typical values.

MBB283

MBB282

−35

−45

handbook, halfpage

d

2

im

(dB)

−50

(dB)

−40

−45

−50

−55

−60

−55

−60

−65

−70

10

20

30

10

20

30

I

(mA)

I

(mA)

C

V_CE= 10 V; V_O= 150 mV (43.5 dBmV);

f_p+ f_q−f_r= 793.25 MHz; T_amb= 25 °C.

V_CE= 10 V; V_O= 60 mV; f_p+ f_q−f_r= 810 MHz; T_amb= 25 °C.

Measured in MATV test circuit (see Fig.2).

Fig.15 Intermodulation distortion;

typical values.

Fig.16 Second order intermodulation distortion;

typical values.

Rev. 04 - 2 March 2009

7 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

1

handbook, full pagewidth

0.5

2

0.2

5

10

∞

+ j

1200

0.2

0.5

1000

1

2

5

10

0

800

500

− j

10

200

5

0.2

100 MHz

2

0.5

MBB270

1

I_C= 14 mA; V_CE= 10 V; Z_o= 50 Ω; T_amb= 25 °C.

Fig.17 Common emitter input reflection coefficient (S₁₁); typical values.

90°

handbook, full pagewidth

120°

60°

100

MHz

150°

30°

200

500

800

+ ϕ

− ϕ

1000

1200

10

20

30

0°

180°

30°

150°

60°

120°

MBB273

90°

I_C= 14 mA; V_CE= 10 V; T_amb= 25 °C.

Fig.18 Common emitter forward transmission coefficient (S₂₁); typical values.

Rev. 04 - 2 March 2009

8 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

90°

handbook, full pagewidth

120°

60°

1200 MHz

typ

150°

1000

800

30°

500

200

+ ϕ

− ϕ

100

0.05

0.1

0.15

180°

0°

30°

150°

60°

120°

MBB271

90°

I_C= 14 mA; V_CE= 10 V; T_amb= 25 °C.

Fig.19 Common emitter reverse transmission coefficient (S₁₂); typical values.

1

handbook, full pagewidth

0.5

2

0.2

5

10

+ j

− j

0.2

0.5

1

2

5

10

∞

0

800

1000

1200

500

10

100

MHz

200

5

0.2

2

0.5

MBB272

1

I_C= 14 mA; V_CE= 10 V; Z_o= 50 Ω; T_amb= 25 °C.

Fig.20 Common emitter output reflection coefficient (S₂₂); typical values.

Rev. 04 - 2 March 2009

9 of 12

NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFR92A

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

D

B

E

A

X

H

v

M

A

E

3

Q

A

1

c

1

2

e

1

b

p

w M

B

L

p

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

b

c

D

E

e

H

L

Q

v

w

A

p

1

E

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

mm

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

Rev. 04 - 2 March 2009

10 of 12

BFR92A

NXP Semiconductors

NPN 5 GHz wideband transistor

Legal information

Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Rev. 04 - 2 March 2009

11 of 12

BFR92A

NXP Semiconductors

NPN 5 GHz wideband transistor

Revision history

Document ID

BFR92A_N_4

Modiﬁcations:

BFR92A_N_3

Release date

20090302

Data sheet status

Change notice

Supersedes

Product data sheet

-

BFR92A_N_3

• Fig.1 on page 2; Figure note changed

20080307

Product data sheet

-

BFR92A_2

BFR92A_1

BFR92A_2

19971029

Product speciﬁcation

(9397 750 02766)

BFR92A_1

19950901

-

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 March 2009

Document identifier: BFR92A_N_4


型号：	BFR92A-T
厂家：	NXP
描述：	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 放大器光电二极管晶体管
文件：	总12页 (文件大小：277K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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