BFR92AW,115 [NXP]
BFR92AW - NPN 5 GHz wideband transistor SC-70 3-Pin;
| 型号： | BFR92AW,115 |
| 厂家： | 
NXP |
| 描述： | BFR92AW - NPN 5 GHz wideband transistor SC-70 3-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR92AW
NPN 5 GHz wideband transistor
Rev. 03 — 12 March 2008
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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(email)
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
FEATURES
DESCRIPTION
3
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
PINNING
1
2
APPLICATIONS
PIN
DESCRIPTION
MBC870
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
Top view
1
2
3
base
Marking code: P2.
emitter
Fig.1 SOT323
collector
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
−
−
−
−
−
−
V
15
V
25
mA
mW
Ptot
hFE
Cre
up to Ts = 93 °C; note 1
300
135
−
IC = 15 mA; VCE = 10 V
65
90
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
−
0.35
pF
Tamb = 25 °C
fT
transition frequency
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
5
−
−
GHz
dB
GUM
maximum unilateral power IC = 15 mA; VCE = 10 V; f = 1 GHz;
−
14
gain
Tamb = 25 °C
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
−
−
−
8
2
−
−
dB
dB
°C
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt
−
Tj
junction temperature
150
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 03 - 12 March 2008
2 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
−
20
15
2
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open base
−
V
open collector
−
V
−
25
300
mA
mW
Ptot
Tstg
Tj
up to Ts = 93 °C; see Fig.2; note 1
−
−65
−
+150 °C
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
190
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 93 °C; note 1
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P
tot
(mW)
300
200
100
0
0
50
100
150
200
o
( C)
T
s
Fig.2 Power derating curve
Rev. 03 - 12 March 2008
3 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP.
MAX.
50
UNIT
nA
ICBO
hFE
Cc
−
−
IC = 15 mA; VCE = 10 V
65
−
90
135
−
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
0.6
0.9
0.35
5
pF
Ce
−
−
pF
Cre
fT
−
−
pF
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
−
GHz
dB
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 10 V;
f = 1 GHz; Tamb = 25 °C
−
−
−
−
14
−
IC = 15 mA; VCE = 10 V;
f = 2 GHz; Tamb = 25 °C
8
2
3
−
−
−
dB
dB
dB
F
noise figure
IC = 5 mA; VCE = 10 V;
f = 1 GHz; Γs = Γopt
IC = 5 mA; VCE = 10 V;
f = 2 GHz; Γs = Γopt
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
Rev. 03 - 12 March 2008
4 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
MGC883
MCD074
1.0
re
120
handbook, halfpage
C
(pF)
h
FE
0.8
80
40
0
0.6
0.4
0.2
0
0
4
8
12
16
20
(V)
0
10
20
30
I
(mA)
V
C
CB
VCE = 10 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGC884
6
handbook, halfpage
f
T
(GHz)
4
2
0
2
1
10
10
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
Rev. 03 - 12 March 2008
5 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
MGC885
MGC886
30
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
20
20
10
G
UM
MSG
G
UM
10
0
0
0
0
5
10
15
20
5
10
15
20
I
(mA)
I
(mA)
C
C
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MGC887
MGC888
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
Rev. 03 - 12 March 2008
6 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
MGC889
MGC890
6
6
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
f = 2 GHz
4
4
2
0
I
= 15 mA
C
1 GHz
10 mA
5 mA
500 MHz
2
0
2
2
3
4
1
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
o
90
1.0
1
o
o
F = 4 dB
F = 3 dB
0.8
0.6
0.4
0.2
0
135
45
2
0.5
F = 2 dB
0.2
5
F
= 1.6 dB
Γ
min
2
opt
0.2
0.5
1
5
o
o
180
0
0
5
0.2
0.5
2
o
o
45
135
1
MGC891
1.0
o
90
f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
Rev. 03 - 12 March 2008
7 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
(4)
(3)
(2)
0.2
(5)
5
(1)
(6)
0.2
0.5
1
2
5
o
o
180
0
0
(7)
(8)
5
0.2
(1) Γopt; Fmin = 2.1 dB.
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
0.5
2
o
o
(5) Γms; Gmax = 15.7 dB.
(6) G = 15 dB.
45
135
1
MGC892
(7) G = 14 dB.
1.0
o
(8) G = 13 dB.
90
f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
(4)
(3)
(2)
0.2
5
(1)
0.2
0.5
1
2
5
o
o
180
0
0
(5)
5
0.2
(6)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(7)
(8)
0.5
2
o
o
(4) F = 5 dB.
45
135
(5) Γms; Gmax = 9.1 dB.
(6) G = 8 dB.
1
MGC893
1.0
(7) G = 7 dB.
o
90
(8) G = 6 dB.
f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 03 - 12 March 2008
8 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
3 GHz
0.5
0.2
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC894
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
30 20
3 GHz
o
o
180
0
50
40
10
o
o
135
45
o
MGC895
90
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
Rev. 03 - 12 March 2008
9 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
o
90
3 GHz
o
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MGC896
90
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
3 GHz
0.2
0.5
2
o
o
45
135
1
MGC897
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
Rev. 03 - 12 March 2008
10 of 13
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AW
PACKAGE OUTLINE
2.2
1.8
1.35
1.15
A
B
X
0.25
0.10
2.2
2.0
M
0.2
B
3
0.2
1.0
0.8
1.1
max
0.1
0.0
0.40
0.30
1
2
0.2
M A
0.3
0.1
0.65
detail X
MBC871
1.3
Dimensions in mm.
Fig.19 SOT323.
Rev. 03 - 12 March 2008
11 of 13
BFR92AW
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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authorized or warranted to be suitable for use in medical, military, aircraft,
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Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Rev. 03 - 12 March 2008
12 of 13
BFR92AW
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
BFR92AW_N_3
Modifications:
BFR92AW_2
BFR92AW_1
Release date
20080312
Data sheet status
Change notice
Supersedes
Product data sheet
-
BFR92AW_2
• Quick reference data and Characteristics Table; DC current gain value changed
19950918
Product specification
-
BFR92AW_1
19921001
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 March 2008
Document identifier: BFR92AW_N_3
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