BFR93-T [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BFR93-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93
NPN 5 GHz wideband transistor
1997 Oct 29
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
FEATURES
DESCRIPTION
page
3
• Very low intermodulation distortion
• High power gain
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
• Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
1
2
PINNING
Top view
MSB003
PIN
1
DESCRIPTION
Marking code: R1p.
base
APPLICATIONS
2
emitter
Fig.1 SOT23.
• RF wideband amplifiers and
oscillators.
3
collector
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
CONDITIONS
TYP.
MAX.
15
UNIT
VCBO
VCEO
IC
open emitter
open base
−
V
V
−
12
35
300
−
−
mA
mW
pF
Ptot
Cre
fT
Ts ≤ 95 °C
−
IC = 2 mA; VCE = 5 V; f = 1 MHz
0.8
5
IC = 30 mA; VCE = 5 V; f = 500 MHz;
−
GHz
Tj = 25 °C
GUM
F
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 500 MHz;
16.5
1.9
−
−
−
dB
dB
dB
Tamb = 25 °C
noise figure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
amb = 25 °C
T
dim
intermodulation distortion
IC = 30 mA; VCE = 5 V; RL = 75 Ω;
−60
VO = 300 mV; fp + fq − fr = 493.25 MHz;
Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
15
V
−
12
V
open collector
−
2
V
−
35
mA
mW
°C
°C
Ptot
Tstg
Tj
Ts ≤ 95 °C; note 1
−
300
+150
175
−65
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
260
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN. TYP. MAX. UNIT
ICBO
hFE
Cc
−
−
50
−
nA
IC = 30 mA; VCE = 5 V
40
−
90
0.7
1.8
0.8
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
pF
pF
pF
Ce
−
−
Cre
IC = 2 mA; VCE = 5 V; f = 1 MHz;
−
−
Tamb = 25 °C
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
−
−
5
−
−
GHz
dB
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
16.5
F
noise figure (note 2)
IC = 2 mA; VCE = 5 V; f = 500 MHz;
ZS = opt.; Tamb = 25 °C
−
−
1.9
−
−
dB
dB
dim
intermodulation distortion
note 3
−60
Notes
2
S21
2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB
2
--------------------------------------------------------------
1 – S11
1 – S22
2. Die mounted in a SOT37 package (BFR91).
3. IC = 30 mA; VCE = 5 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C;
Vp = VO = 300 mV at fp = 495.25 MHz;
Vq = VO −6 dB at fq = 503.25 MHz;
Vr = VO −6 dB at fr = 505.25 MHz;
measured at fp + fq − fr = 493.25 MHz.
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MBG246
400
handbook, halfpage
P
+24 V
560 Ω
handbook, halfpage
tot
(mW)
L3
390 Ω
1.2 kΩ
240 Ω
680 pF
300
680 pF
L2
75 Ω
output
200
100
L1
680 pF
75 Ω
input
DUT
16 Ω
MEA454
0
0
50
100
150
200
o
T ( C)
s
L2 = L3 = 5 µH Ferroxcube choke, catalogue number
3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal
diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
MCD087
MEA450
120
1
handbook, halfpage
handbook, halfpage
C
c
(pF)
0.8
h
FE
80
40
0
0.6
0.4
0.2
0
0
0
10
20
30
4
8
12
16
V
20
(V)
I
(mA)
C
CB
VCE = 5 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 DC current gain as a function of
collector current; typical values.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MEA419
MEA449
30
6
handbook, halfpage
handbook, halfpage
f
gain
(dB)
T
(GHz)
20
10
0
4
G
UM
2
0
2
I S
12
I
2
4
3
0
10
20
30
40
10
10
10
f (MHz)
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
Fig.7 Gain as a function of frequency;
typical values.
MEA453
MEA452
10
10
handbook, halfpage
handbook, halfpage
F
(dB)
8
6
4
2
0
F
(dB)
5
0
–1
0
10
20
30
40
10
1
10
f (GHz)
I
(mA)
C
VCE = 5 V; f = 500 MHz; ZS = opt.; Tamb = 25 °C.
IC = 2 mA; VCE = 5 V; ZS = opt.; Tamb = 25 °C.
Fig.8 Minimum noise figure as a function of
collector current; typical values.
Fig.9 Minimum noise figure as a function of
frequency; typical values.
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
MEA418
60
handbook, halfpage
B
S
(mS)
40
20
0
F = 4.5 dB
4
3.5
3
2.5
1.9
20
40
60
0
20
40
60
80
100
G
120
(mS)
S
IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.10 Circles of constant noise figure;
typical values.
1997 Oct 29
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
1
0.5
2
0.2
5
10
1000 MHz
+ j
800
1
0.2
0.5
2
5
10
500
200
0
∞
– j
10
5
0.2
2
0.5
MEA420
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.11 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
60
120
200 MHz
o
o
150
30
500
800
ϕ
ϕ
20
10
1000
o
o
0
180
o
o
30
150
o
o
60
120
o
MEA422
90
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.12 Common emitter forward transmission coefficient (S21); typical values.
7
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
o
90
o
o
120
60
1000 MHz
800
o
o
150
30
500
200
ϕ
ϕ
0.10
0.20
o
o
0
180
o
o
30
150
o
o
60
120
o
MEA423
90
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.13 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
800
500
10
1000 MHz
200
5
0.2
2
0.5
MEA421
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.14 Common emitter output reflection coefficient (S22); typical values.
8
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Oct 29
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93
NOTES
1997 Oct 29
11
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 29
Document order number: 9397 750 02765
相关型号：
BFR93A
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
INFINEON
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